DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Excellent ruggedness 2 drain 2 • Designed to withstand abrupt load mismatch errors 3 gate 1 • Source on underside eliminates DC isolators; reducing common mode inductance 4 gate 2 5 source connected to flange • Designed for broadband operation (UHF band) • Internal input and output matching for high gain and optimum broadband operation. 1 2 APPLICATIONS • Communication transmitter applications in the UHF frequency range. 5 3 4 Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) ∆Gp (dB) 860 32 150 >13.5 typ. 14.5 >50 ≤1 860 (ch 69) 32 >150 typ. 170 (peak sync) >14 >40 note 1 MIN. MAX. UNIT MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB Note 1. Sync compression: input sync ≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 18 A Ptot total power dissipation − 318 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2001 Feb 09 Tmb ≤ 25 °C 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 318 W VALUE UNIT 0.55 K/W 0.2 K/W CHARACTERISTICS Tj = 25 °C; per section; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.5 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 150 mA 4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 32 V − − 2.2 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 25 nA gfs forward transconductance VDS = 10 V; ID = 4 A − 4 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 4 A − 160 − mΩ Ciss input capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 82 − pF Coss output capacitance VGS = 0; VDS = 32 V; f = 1 MHz (1) − 40 − pF 6 − pF Crss feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz Note 1. Capacitance values without internal matching. MLD510 100 Coss handbook, halfpage (pF) 80 60 40 20 0 10 0 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Output capacitance as a function of drain-source voltage; typical values per section. 2001 Feb 09 3 (1) (1) − Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A APPLICATION INFORMATION RF performance in a common source 860 MHz test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W; unless otherwise specified. f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) dIm (dBc) ∆Gp (dB) 860 32 1 150 >13.5 typ. 14.5 >50 − ≤1 f1 = 860 f1 = 860.1 32 1 150 (PEP) >14 >40 ≤−25 − 860 (ch 69) 32 1 > 150 typ. 170 (peak sync) >14 >40 − note 1 MODE OF OPERATION CW; class-AB 2-tone; class-AB PAL BG (TV); class-AB Note 1. Sync compression: input sync ≥ 33%; output sync 27% measured in an 860 MHz test circuit. Ruggedness in class-AB operation The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition. MCD871 12 MCD872 10 handbook, halfpage handbook, halfpage zi (Ω) ZL (Ω) xi RL 5 8 4 0 ri XL 0 400 500 600 700 −5 400 800 900 f (MHz) 500 600 700 CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 °C. CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 °C. Fig.3 Fig.4 Input impedance as a function of frequency (series components); typical push-pull values. 2001 Feb 09 4 800 900 f (MHz) Load impedance as a function of frequency (series components); typical push-pull values. Philips Semiconductors Product specification UHF power LDMOS transistor MLD514 20 handbook, halfpage Gp (dB) BLF861A 80 ηD (%) Gp dim (dBc) 60 −20 10 40 −40 5 20 −60 15 MLD515 0 handbook, halfpage d3 ηD 0 0 100 d5 −80 0 200 300 PL (PEP) (W) Th = 25 °C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in an 860 MHz test circuit. Fig.5 Fig.6 MLD516 20 80 ηD (%) Gp (dB) Gp 15 60 ηD 10 40 5 20 0 0 50 100 150 0 250 200 PL (W) Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 860 MHz; measured in an 860 MHz test circuit. Fig.7 Power gain and drain efficiency as functions of load power; typical values. 2001 Feb 09 100 200 300 PL (PEP) (W) Th = 25 °C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in an 860 MHz test circuit. Power gain and drain efficiency as functions of peak envelope load power; typical values. handbook, halfpage 0 5 Intermodulation distortion as a function of peak envelope output power; typical values. 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Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A List of components class-AB broadband test circuit (see Figs 8 and 9) COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 20 pF C2 multilayer ceramic chip capacitor; note 1 4.3 pF DIMENSIONS C3, C6, C9 tekelec trimmer 0.6 to 4.5 pF C4 multilayer ceramic chip capacitor; note 1 9.1 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C7 multilayer ceramic chip capacitor; note 1 5.1 pF C8 multilayer ceramic chip capacitor; note 1 13 pF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12, C13 multilayer ceramic chip capacitor; note 2 6.8 pF C14 multilayer ceramic chip capacitor; note 3 1 pF C15 multilayer ceramic chip capacitor; note 3 20 pF C16, C17 multilayer ceramic chip capacitor 1 nF C18 multilayer ceramic chip capacitor 100 nF C19, C26 multilayer ceramic chip capacitor 100 µF C20, C21, C22, C23 multilayer ceramic chip capacitor; note 2 100 pF C24 electrolytic capacitor 1000 µF C25 multilayer ceramic chip capacitor 1 µF L1, L2 stripline; note 4 30.6 × 2.4 mm L3, L4 stripline; note 4 28 × 2.4 mm L5, L6 stripline; note 4 10 × 5 mm L7, L8 stripline; note 4 20 × 10 mm L9, L10 stripline; note 4 5.5 × 15 mm L11, L12 stripline; note 4 10 × 10 mm L13, L14 stripline; note 4 15 × 5 mm L15, L16 stripline; note 4 48.5 × 2.4 mm L17 stripline; note 4 10 × 2.4 mm L18 ferrite L19 wire inductor (hairpin) B1 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 70 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 48.5 mm 2001 Feb 09 2222 595 16754 length = 17 mm 7 CATALOGUE No. Philips Semiconductors Product specification UHF power LDMOS transistor COMPONENT BLF861A DESCRIPTION VALUE R1 resistor 33 Ω R2 resistor 1 kΩ R3 resistor 100 kΩ R4 resistor 100 Ω R5, R6 SMD resistor 3.9 Ω DIMENSIONS CATALOGUE No. Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm. 2001 Feb 09 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A 95 handbook, full pagewidth 95 80 +Vbias +VS C26 C18 C19 R2 R4 C16 C1 C17 R6 2.5 C8 C5 C2 C4 C3 R1 C6 C7 C9 C10 C11 L19 L18 8 15 10 B1 BLF861 R5 R3 B2 C20 C14 C21 C22 C12 C13 C25 C15 C23 C24 2.5 MCD877 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization. Fig.9 Printed-circuit board and component layout for class-AB broadband test circuit. 2001 Feb 09 9 Philips Semiconductors Product specification UHF power LDMOS transistor MLD511 16 handbook, halfpage 80 (dB) (%) 12 60 MLD512 250 handbook, halfpage Po sync ηD Gp Gp BLF861A (W) 200 150 ηD 100 8 40 50 4 400 500 600 700 0 400 20 800 900 f (MHz) 500 600 700 800 900 f (MHz) Th = 25 °C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit. Th = 25 °C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit. Fig.10 Power gain and drain efficiency as functions of frequency; typical values. Fig.11 Peak envelope sync power as a function of frequency; typical values. MLD513 16 handbook, halfpage Gp Gp (dB) 80 ηD (%) 60 12 ηD 8 4 400 40 500 600 700 20 800 900 f (MHz) Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB operation; PL = 150 W; measured in broadband test circuit. Fig.12 Power gain and drain efficiency as functions of frequency; typical values. 2001 Feb 09 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A D A F D1 U1 B q C w2 M C M H1 1 H c 2 E1 p U2 5 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 8.51 8.26 0.15 0.10 inches D D1 e E E1 22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01 F H 1.78 1.52 H1 15.75 18.72 14.73 18.47 p Q q U1 U2 w1 w2 w3 3.38 3.12 2.72 2.46 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.25 0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-08-27 99-12-28 SOT540A 2001 Feb 09 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 Feb 09 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES 2001 Feb 09 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES 2001 Feb 09 14 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES 2001 Feb 09 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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