DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain PIN SYMBOL • Easy power control 1 s source • Good thermal stability 2 s source • Gold metallization ensures excellent reliability 3 g gate • Designed for broadband operation. 4 d drain 5 s source 6 s source APPLICATIONS DESCRIPTION • Communication transmitters in the UHF frequency range. handbook, halfpage 2 4 6 DESCRIPTION d N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. s g 1 3 5 Top view MAM390 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) CW, class-B 500 28 20 >11 >50 CW, class-B 960 28 20 typ. 7 typ. 50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 21 2 Philips Semiconductors Product specification UHF power MOS transistor BLF544 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 3.5 A Ptot total power dissipation − 48 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 3.7 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.4 K/W MRA992 10 MBK442 60 handbook, halfpage handbook, halfpage Ptot ID (A) (W) (1) (1) (2) 40 1 (2) 20 10−1 1 10 VDS (V) 0 102 0 80 120 Th ( °C) 160 (1) Short-time operation during mismatch. (2) Continuous operation. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. Fig.2 DC SOAR. 1998 Jan 21 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF544 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 65 − − V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 40 mA; VDS = 10 V 1 − 4 V ∆VGSth gate-source voltage difference of matched pairs ID = 40 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 1.2 A; VDS = 10 V 600 900 − mS RDSon drain-source on-state resistance ID = 1.2 A; VGS = 10 V − 0.85 1.25 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 4.8 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 32 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 24 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 6.4 − pF MDA504 4 MDA505 6 handbook, halfpage handbook, halfpage T.C (mV/K) ID (A) 2 4 0 2 −2 −4 10−2 10−1 0 1 ID (A) 10 0 5 10 15 VGS (V) 20 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1998 Jan 21 Fig.5 4 Drain current as a function of gate-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF544 MDA506 2 MDA507 100 C (pF) handbook, halfpage handbook, halfpage RDSon (Ω) 1.6 80 1.2 60 0.8 40 0.4 20 Cis Cos 0 0 0 50 100 Tj (°C) 150 0 10 20 VDS (V) 30 ID = 1.2 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. Fig.7 MDA508 40 handbook, halfpage Crs (pF) 30 20 10 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. 1998 Jan 21 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF544 APPLICATION INFORMATION Th = 25 °C; Rth mb-h = 0.4 K/W unless otherwise specified. RF performance in a common source class-B circuit. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) CW, class-B 500 28 40 20 >11 typ. 14 >50 typ. 60 CW, class-B 960 28 40 20 typ. 7 typ. 50 CW, class-B 960 24 40 15 typ. 7 typ. 50 MODE OF OPERATION Ruggedness in class-B operation The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MDA512 20 Gp handbook, halfpage (dB) 16 80 ηD (%) MDA513 30 handbook, halfpage PL (W) Gp 20 12 60 ηD 8 10 4 0 40 0 10 14 18 22 26 0 30 1 2 PL (W) PIN (W) 3 Class-B operation; VDS = 28 V; IDQ = 40 mA; ZL = 4.3 + j6.3 Ω; f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 40 mA; ZL = 4.3 + j6.3 Ω; f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. 1998 Jan 21 6 Philips Semiconductors Product specification UHF power MOS transistor handbook, full pagewidth BLF544 ,,,,, ,,,,,, ,,,,, ,,,,,, C14 C2 50 Ω input C1 L1 C4 L2 L3 C8 L4 L5 D.U.T. L8 BLF544 C3 C15 L6 C9 C5 L9 C11 R1 C10 R5 C6 L7 C12 R2 C13 C7 +VD R3 R4 f = 500 MHz Fig.11 Test circuit for class-B operation. 1998 Jan 21 7 MDA502 C17 C16 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF544 List of components (see Figs 11 and 12). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C6, C11, C17 multilayer ceramic chip capacitor; note 1 390 pF; 500 V C2 multilayer ceramic chip capacitor; note 2 16 pF; 50 V C3, C5 film dielectric trimmer 2 to 9 pF C4 multilayer ceramic chip capacitor; note 2 27 pF; 50 V C7 multilayer ceramic chip capacitor 2 × 100 nF in parallel; 50 V C8, C9 multilayer ceramic chip capacitor; note 2 39 pF C10, C12 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104 C13 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478 C14 multilayer ceramic chip capacitor; note 1 20 pF; 500 V C15, C16 film dielectric trimmer 2 to 18 pF L1 stripline note 3 50 Ω 9.5 × 2.5 mm L2 stripline note 3 50 Ω 34.5 × 2.5 mm L3 stripline note 3 50 Ω 17.5 × 2.5 mm L4, L5 stripline note 3 42 Ω 3 × 3 mm L6 4 turns enamelled 0.8 mm copper wire 31 nH length 7.5 mm int. dia. 3 mm leads 2 × 5 mm L7 grade 3B Ferroxcube RF choke L8 stripline note 3 50 Ω 22 × 2.5 mm L9 stripline note 3 50 Ω 39.5 × 2.5 mm R1, R2 0.4 W metal film resistor 1 kΩ R3 10 turns cermet potentiometer 50 kΩ R4 0.4 W metal film resistor 140 kΩ 2322 151 11404 R5 1 W metal film resistor 10 Ω 2322 153 51009 2222 809 09002 2222 852 47104 2222 809 09003 4312 020 36642 2322 151 11002 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. 1998 Jan 21 8 Philips Semiconductors Product specification UHF power MOS transistor BLF544 150 handbook, full pagewidth mounting screw straps rivets straps straps 70 straps mounting screw R3 C7 C13 +VD R2 R5 C10 C1 L1 C6 C4 R1 C2 L2 L6 L4 L5 L3 C12 L7 C8 L8 C11 C14 C17 L9 C9 C3 C5 C15 C16 MDA501 Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. 1998 Jan 21 9 Philips Semiconductors Product specification UHF power MOS transistor handbook, full pagewidth ,,,,,, ,,,,,, ,,,,,, ,,,,,, C2 50 Ω input BLF544 C1 L1 C4 L2 L3 C8 L4 C13 C15 C17 L5 L8 L9 D.U.T. L10 C19 BLF544 C14 C3 C9 C5 C16 C18 L6 C11 R1 R4 L7 C7 C10 C6 C12 R2 R3 +VD f = 960 MHz. Fig.13 Test circuit for class-B operation. 1998 Jan 21 10 MDA503 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF544 List of components (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 68 pF; 500 V C2 multilayer ceramic chip capacitor; note 2 1.6 pF; 50 V C3, C5, C16, C18 film dielectric trimmer 1.4 to 5.5 pF C4 multilayer ceramic chip capacitor; note 2 1 pF; 50 V C6 multilayer ceramic chip capacitor 10 nF; 50 V C7, C11 multilayer ceramic chip capacitor; note 1 56 µF; 500 V DIMENSIONS CATALOGUE NO. 2222 809 09001 2222 852 47103 C8, C9, C15, C17 multilayer ceramic chip capacitor note 2 6.8 µF; 50 V C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104 C12 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478 C13 multilayer ceramic chip capacitor; note 2 16 pF; 50 V C14 multilayer ceramic chip capacitor; note 2 18 pF; 50 V C19 multilayer ceramic chip capacitor; note 1 62 pF; 500 V L1, L8 stripline; note 3 50 Ω 6 × 2.5 mm L2 stripline; note 3 50 Ω 38 × 2.5 mm L3 stripline; note 3 50 Ω 17.5 × 2.5 mm L4, L5 stripline; note 3 42 Ω 3 × 3 mm L6 2 turns enamelled 1 mm copper wire 16 nH length 3.4 mm int. dia. 3 mm leads 2 × 5 mm L7 grade 3B Ferroxcube RF choke L9 stripline; note 3 50 Ω 21 × 2.5 mm L10 stripline; note 3 50 Ω 34.5 × 2.5 mm R1 0.4 W metal film resistor 15 kΩ R2 10 turns potentiometer 50 kΩ R3 0.4 W metal film resistor 140 kΩ 2322 151 11404 R4 0.4 W metal film resistor 10 Ω 2322 153 51009 4312 020 36642 2322 151 11473 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. 1998 Jan 21 11 Philips Semiconductors Product specification UHF power MOS transistor BLF544 MDA509 5 MDA510 20 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 RL 15 −5 10 XL xi −10 −15 5 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W. Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. Optimum input and load impedances Optimum input impedance: 1.2 + j4.8 Ω. Optimum load impedance: 2.6 − j3.1 Ω. Conditions: class-B operation; VDS = 24 V; IDQ = 40 mA; f = 960 MHz; PL = 15 W; typical values. MDA511 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W. Fig.16 Power gain as a function of frequency; typical values. 1998 Jan 21 12 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A 1998 Jan 21 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 13 Philips Semiconductors Product specification UHF power MOS transistor BLF544 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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