DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF404 UHF power MOS transistor Product specification Supersedes data of 1997 Oct 28 1998 Jan 29 Philips Semiconductors Product specification UHF power MOS transistor BLF404 FEATURES PINNING • High power gain PIN • Easy power control 1, 8 source • Gold metallization 2, 3 gate • Good thermal stability 4, 5 source • Withstands full load mismatch 6, 7 drain DESCRIPTION • Designed for broadband operation. APPLICATIONS 8 handbook, halfpage 5 • Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5 V. DESCRIPTION 1 Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap. Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common source test circuit. MODE OF OPERATION CW class-AB f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 12.5 4 ≥10 ≥50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 1998 Jan 29 2 Philips Semiconductors Product specification UHF power MOS transistor BLF404 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V VGS gate-source voltage − ±20 V ID DC drain current − 1.5 A Ptot total power dissipation − 8.3 W Tstg storage temperature Tmb ≤ 85 °C −65 150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to mounting base Rth j-mb MGM522 10 handbook, halfpage ID (A) 1 (1) (2) 10−1 1 10 VDS (V) 102 (1) Current in this area may be limited by RDSon. (2) Tmb = 85 °C. Fig.2 DC SOAR. 1998 Jan 29 3 Tmb ≤ 85 °C, Ptot = 8.3 W VALUE UNIT 12.1 K/W Philips Semiconductors Product specification UHF power MOS transistor BLF404 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − 40 MAX. − UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA V VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 0.5 mA IGSS gate-source leakage current VDS = 0; VGS = ±20 V − − 1 µA VGS = 15 V; VDS = 10 V IDSX on-state drain current − 2.3 − A RDSon drain-source on-state resistance ID = 0.7 A; VGS = 15 V − 1.8 2.7 Ω gfs forward transconductance ID = 0.7 A; VDS = 10 V 200 270 − mS Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 14 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 17 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 3 − pF MRA254 25 handbook, halfpage T.C. (mV/K) ID (A) 15 2 5 1 −5 10 MRA249 3 handbook, halfpage 102 103 0 104 0 4 ID(mA) 8 12 16 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1998 Jan 29 Fig.4 4 Drain current as a function of gate-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF404 MRA246 MRA253 5 50 handbook, halfpage handbook, halfpage RDSon (Ω) C (pF) 4 40 3 30 2 20 1 10 0 0 50 100 Tj (oC) 0 150 Cos Cis 0 4 8 12 16 VDS (V) ID = 0.7 A; VGS = 15 V. VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.5 Drain-source on-state resistance as a function of junction temperature; typical values. Fig.6 MRA256 10 Crs (pF) handbook, halfpage 8 6 4 2 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. 1998 Jan 29 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF404 APPLICATION INFORMATION RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with through metallized holes. MODE OF OPERATION CW, class-AB f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) 500 12.5 50 4 ≥10 ≥50 typ. 11.5 typ. 55 Ruggedness in class-AB operation The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C. MGM520 20 Gp (dB) handbook, halfpage (%) 16 PL (W) 80 4 ηD 12 MGM521 6 100 ηD handbook, halfpage 60 Gp 40 8 2 20 4 0 0 0 2 4 PL (W) 0 0 6 CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb ≤ 60 °C. Fig.8 400 PD (mW) 600 CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb ≤ 60 °C. Power gain and drain efficiency as functions of load power; typical values. 1998 Jan 29 200 Fig.9 6 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF404 Test circuit information +VD handbook, full pagewidth R3 R1 R4 R2 L1 C1 R6 C3 L2 C2 R5 C10 L8 input 50 Ω C5 L10 L6 L3 L7 DUT C6 C7 C9 output 50 Ω C12 C13 MGM523 C8 Fig.10 Class-AB common source test circuit at f = 500 MHz. 1998 Jan 29 L11 C11 L5 C4 L4 L9 7 Philips Semiconductors Product specification UHF power MOS transistor BLF404 List of components used in test circuit (see Figs 10 and 11). COMPONENT DESCRIPTION VALUE DIMENSIONS C1 electrolytic capacitor 4.7 µF, 10 V C2, C3 multilayer ceramic chip capacitor 47 nF C4 multilayer ceramic chip capacitor; note 1 18 pF C5, C10 multilayer ceramic chip capacitor; note 1 180 pF C6, C11 multilayer ceramic chip capacitor; note 1 270 pF C7 multilayer ceramic chip capacitor; note 1 22 pF C8 multilayer ceramic chip capacitor; note 1 8.2 pF C9 multilayer ceramic chip capacitor; note 1 2.7 pF C12 multilayer ceramic chip capacitor; note 1 1.2 pF C13 multilayer ceramic chip capacitor; note 1 12 pF L1 2 turns 1 mm enamelled copper wire on a grade 4B1 Ferroxcube core ext. dia. = 4.2 mm int. dia. = 2 mm length = 6 mm L2 3 turns 1 mm enamelled copper wire int. dia. = 4.6 mm leads = 2 x 5 mm L3 bifilar coil lead dia. = 0.8 mm L4 bifilar coil lead dia. = 1 mm L5 stripline; note 2 50 Ω 8.8 × 2.38 mm L6 stripline; note 2 50 Ω 5.8 × 2.38 mm L7 stripline; note 2 50 Ω 6.8 × 2.38 mm L8 stripline; note 2 50 Ω 3.76 × 2.38 mm L9 stripline; note 2 50 Ω 5.8 × 2.38 mm L10 stripline; note 2 50 Ω 4.48 × 2.38 mm L11 stripline; note 2 50 Ω 3.13 × 2.38 mm R1, R2 SMD resistor 3.9 kΩ R3 metal film resistor 1 kΩ, 0.25 W R4 metal film resistor 22 Ω, 0.25 W R5 metal film resistor 10 kΩ, 0.25 W R6 potentiometer 10 kΩ CATALOGUE No. Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (εr = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm. 1998 Jan 29 8 Philips Semiconductors Product specification UHF power MOS transistor BLF404 56 handbook, full pagewidth 31 2 1 3 +VD R6 R1 R2 C1 R3 L1 R4 C2 C3 R5 L2 L3 L5 L6 L7 C6 C4 C7 BLF404 C5 C8 C10 L4 L8 L9 L10 L11 C11 C9 C12 C13 MGM524 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.11 Printed-circuit board and component layout for 500 MHz class-AB test circuit in Fig.10. 1998 Jan 29 9 Philips Semiconductors Product specification UHF power MOS transistor BLF404 MGM517 MGM518 0 8 handbook, halfpage ri (Ω) 16 handbook, halfpage xi (Ω) xi ZL (Ω) 6 −20 12 4 −40 8 RL −60 4 −80 600 0 2 XL ri 0 0 200 400 f (MHz) 0 200 400 f (MHz) 600 CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb ≤ 60 °C. CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb ≤ 60 °C. Fig.12 Input impedance as a function of frequency (series components); typical values. Fig.13 Load impedance as a function of frequency (series components); typical values. MGM519 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 CW, class-AB operation; VDS = 12.5 V; IDQ = 50 mA; PL = 4 W; Tmb ≤ 60 °C. Fig.14 Power gain as a function of frequency (series components); typical values. 1998 Jan 29 10 Philips Semiconductors Product specification UHF power MOS transistor BLF404 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. full pagewidth 1.87 (2×) 0.60 (4×) 0.80 (2×) 0.50 (12×) 7.38 3.60 1.00 (8×) 1.00 (9×) 4.60 MGK390 Dimensions in mm. Fig.15 Reflow soldering footprint for SOT409A. 1998 Jan 29 11 Philips Semiconductors Product specification UHF power MOS transistor BLF404 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7° 0° inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409A 1998 Jan 29 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification UHF power MOS transistor BLF404 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125108/00/03/pp16 Date of release: 1998 Jan 29 Document order number: 9397 750 03239