DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of September 1992 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF368 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 1 2 d2 ndbook, halfpage g2 s g1 5 DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. 4 Top view DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source MBB157 MSB008 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING PINNING - SOT262A1 PIN d1 5 3 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB f (MHz) VDS (V) PL (W) 225 32 300 Gp (dB) ∆Gp (dB) (note 1) ηD (%) >12 >1 >55 typ. 13.5 typ. 0.4 typ. 62 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). 1998 Jul 29 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDSS drain-source voltage − 65 V VGSS gate-source voltage − ±20 V ID drain current (DC) − Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded − Tstg storage temperature Tj junction temperature 25 A 500 W −65 150 °C − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W MRA933 102 handbook, halfpage MGE616 500 handbook, halfpage Ptot (W) ID (A) 400 (2) (1) (2) (1) 300 10 200 100 1 1 10 VDS (V) 0 102 40 80 120 160 Th (°C) (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. 1998 Jul 29 0 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 32 V − − 5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 100 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of both transistor sections ID = 100 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 RDSon drain-source on-state resistance ID = 8 A; VDS = 10 V − 0.1 0.15 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 37 − A Cis input capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 495 − pF Cos output capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 340 − pF Crs feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 40 − pF Cd-f drain-flange capacitance − 5.4 − pF MGP229 0 MGP230 60 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 40 −2 −3 20 −4 −5 10−1 1 ID (A) 0 10 0 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. 1998 Jul 29 10 15 VGS (V) 20 VDS = 10 V; Tj = 25 °C. VDS = 10 V. Fig.4 5 Fig.5 4 Drain current as a function of gate-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP231 MGP234 200 1500 handbook, halfpage handbook, halfpage RDSon C (pF) (mΩ) 150 1000 100 500 Cis Cos 50 0 0 50 100 150 Tj (°C) 0 10 VGS = 10 V; ID = 8 A. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. MGP232 600 handbook, halfpage Crs (pF) 400 200 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. 1998 Jul 29 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V. MODE OF OPERATION CW, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ∆Gp (dB) (note 1) ηD (%) 225 32 2 × 250 300 >12 >1 >55 typ. 13.5 typ. 0.4 typ. 62 225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68 225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60 175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated output power. 1998 Jul 29 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP239 20 MGP241 80 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 16 60 12 40 8 20 4 0 0 100 200 300 400 500 PL (W) 0 100 200 300 400 500 PL (W) Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.9 Fig.10 Efficiency as a function of load power; typical values per section. Power gain as a function of load power; typical values per section. MGP240 500 handbook, halfpage PL (W) 400 300 200 100 0 0 10 20 PIN (W) 30 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.11 Load power as a function of input power; typical values per section. 1998 Jul 29 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C12 C17 C8 R7 R2 L12 C18 C9 C13 C6 L13 R3 C25 D.U.T. L1 50 Ω input C1 L4 L2 C4 L18 L20 C29 L22 L8 L6 C3 L10 L16 C5 C22 C23 C24 C27 L23 C28 50 Ω output Philips Semiconductors A C16 VHF push-pull power MOS transistor ndbook, full pagewidth 1998 Jul 29 R1 VDD1 8 C2 L3 L7 L5 C30 L9 L11 L21 L24 L14 C7 C10 L19 L17 C26 R4 C14 C19 R5 R8 A L15 C11 C20 IC1 C15 R9 R6 C34 C32 C21 C31 MGP211 f = 225 MHz. Fig.12 Test circuit for class-AB operation. BLF368 VDD2 Product specification VDD1 C33 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 List of components class-AB test circuit (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2 multilayer ceramic chip capacitor (note 1) 2 × 56 pF in parallel + 18 pF, 500 V C3 film dielectric trimmer 2 to 9 pF C4 multilayer ceramic chip capacitor (note 1) 47 pF, 500 V C5 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6, C7, C9, C10, multilayer ceramic chip capacitor C12, C15, C31, C34 (note 1) 1 nF, 500 V 2222 852 47104 C8, C11, C16, C21, C32 multilayer ceramic chip capacitor (note 1) 100 nF, 50 V C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C23 multilayer ceramic chip capacitor (note 1) 10 pF + 30 pF in parallel, 500 V C24, C28 film dielectric trimmer 2 to 18 pF C25, C26 multilayer ceramic chip capacitor (note 1) 39 pF + 47 pF in parallel, 500 V C27 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C29, C30 multilayer ceramic chip capacitor (note 1) 3 × 100 pF in parallel, 500 V L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8 × 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline (note 2) 43 Ω 6 × 32.5 mm L6, L7 stripline (note 2) 43 Ω 6 × 10.5 mm L8, L9 stripline (note 2) 43 Ω 6 × 3 mm L10, L11 stripline (note 2) 43 Ω 6 × 10.5 mm L12, L15 grade 3B Ferroxcube wideband HF choke 2 in parallel L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 3 mm L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 35 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 9 mm R1, R6 10 turns potentiometer 50 kΩ R2, R5 metal film resistor 0.4 W, 1 kΩ R3, R4 metal film resistor 0.4 W, 536 Ω 1998 Jul 29 9 2222 809 09005 2222 809 09006 4312 020 36642 space 2.5 mm int. dia. 5 mm leads 2 × 7 mm Philips Semiconductors Product specification VHF push-pull power MOS transistor COMPONENT BLF368 DESCRIPTION VALUE R7, R8 metal film resistor 1 W, ±5%, 10 Ω R9 metal film resistor 1 W, 3.16 kΩ IC1 voltage regulator 78L05 DIMENSIONS CATALOGUE No. Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large RF currents. 1998 Jul 29 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor handbook, full pagewidth BLF368 130 119 100 IC1 R9 +VDD1 to R1, R6 C31 C32 C16 L12 C17 R7 C34 L1 C12 C13 C18 C33 L2 L12 slider R1 L22 C9 L13 R2 C8 +VDD1 C6 hollow rivet R3 C1 L4 L5 L10 L6 C4 L7 hollow rivets C3 L8 C5 C2 R4 R5 C11 L9 C22 L11 C29 C25 L16 L20 L18 C27 C23 C24 L17 C26 L19 C10 hollow rivets C28 L21 C30 +VDD2 L14 L3 slider R6 C7 L15 L23 L24 R8 C19 copper strap C20 L15 C14 C15 C21 copper strap MGP213 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. Fig.13 Component layout for 225 MHz class-AB test circuit. 1998 Jul 29 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP242 2 MGP243 2 handbook, halfpage handbook, halfpage Zi (Ω) 1 ri ZL (Ω) 0 −1 −2 150 RL 1 XL xi 200 f (MHz) 0 150 250 200 f (MHz) 250 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Fig.14 Input impedance as a function of frequency (series components); typical values per section. Fig.15 Load impedance as a function of frequency (series components); typical values per section. MGP244 20 handbook, halfpage Gp (dB) 16 12 8 4 0 150 200 f (MHz) 250 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Fig.16 Power gain as a function of frequency; typical values per section. 1998 Jul 29 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches 0.227 0.197 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.396 0.395 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.112 1.100 0.102 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A1 1998 Jul 29 EUROPEAN PROJECTION ISSUE DATE 97-06-28 13 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 29 14 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 NOTES 1998 Jul 29 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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