PHILIPS BLF368

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF368
VHF push-pull power MOS
transistor
Product specification
Supersedes data of September 1992
1998 Jul 29
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
BLF368
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
1
2
d2
ndbook, halfpage
g2
s
g1
5
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
4
Top view
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
MBB157
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINNING - SOT262A1
PIN
d1
5
3
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-AB
f
(MHz)
VDS
(V)
PL
(W)
225
32
300
Gp
(dB)
∆Gp
(dB)
(note 1)
ηD
(%)
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 29
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
VDSS
drain-source voltage
−
65
V
VGSS
gate-source voltage
−
±20
V
ID
drain current (DC)
−
Ptot
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
Tstg
storage temperature
Tj
junction temperature
25
A
500
W
−65
150
°C
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
Rth mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
0.15
K/W
MRA933
102
handbook, halfpage
MGE616
500
handbook, halfpage
Ptot
(W)
ID
(A)
400
(2)
(1)
(2)
(1)
300
10
200
100
1
1
10
VDS (V)
0
102
40
80
120
160
Th (°C)
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
1998 Jul 29
0
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 100 mA
65
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 32 V
−
−
5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 100 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
both transistor sections
ID = 100 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
−
S
gfs1/gfs2
forward transconductance ratio
of both transistor sections
ID = 8 A; VDS = 10 V
0.9
−
1.1
RDSon
drain-source on-state resistance
ID = 8 A; VDS = 10 V
−
0.1
0.15
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
37
−
A
Cis
input capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
495
−
pF
Cos
output capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
340
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
40
−
pF
Cd-f
drain-flange capacitance
−
5.4
−
pF
MGP229
0
MGP230
60
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
−1
40
−2
−3
20
−4
−5
10−1
1
ID (A)
0
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
1998 Jul 29
10
15
VGS (V)
20
VDS = 10 V; Tj = 25 °C.
VDS = 10 V.
Fig.4
5
Fig.5
4
Drain current as a function of gate-source
voltage; typical values per section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP231
MGP234
200
1500
handbook, halfpage
handbook, halfpage
RDSon
C
(pF)
(mΩ)
150
1000
100
500
Cis
Cos
50
0
0
50
100
150
Tj (°C)
0
10
VGS = 10 V; ID = 8 A.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
MGP232
600
handbook, halfpage
Crs
(pF)
400
200
0
0
10
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1998 Jul 29
5
20
30
VDS (V)
40
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V.
MODE OF OPERATION
CW, class-AB
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
∆Gp
(dB)
(note 1)
ηD
(%)
225
32
2 × 250
300
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
225
28
2 × 250
300
typ. 13
typ. 0.7
typ. 68
225
35
2 × 250
300
typ. 14
typ. 0.2
typ. 60
175
28
2 × 250
300
typ. 15
typ. 0.5
typ. 70
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 32 V; f = 225 MHz at rated output power.
1998 Jul 29
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP239
20
MGP241
80
handbook, halfpage
handbook, halfpage
Gp
(dB)
ηD
(%)
16
60
12
40
8
20
4
0
0
100
200
300
400
500
PL (W)
0
100
200
300
400
500
PL (W)
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.9
Fig.10 Efficiency as a function of load power;
typical values per section.
Power gain as a function of load power;
typical values per section.
MGP240
500
handbook, halfpage
PL
(W)
400
300
200
100
0
0
10
20
PIN (W)
30
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.11 Load power as a function of input power;
typical values per section.
1998 Jul 29
7
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C12
C17
C8
R7
R2
L12
C18
C9
C13
C6
L13
R3
C25
D.U.T.
L1
50 Ω
input
C1
L4
L2
C4
L18
L20
C29
L22
L8
L6
C3
L10 L16
C5
C22
C23
C24
C27
L23
C28
50 Ω
output
Philips Semiconductors
A
C16
VHF push-pull power MOS transistor
ndbook, full pagewidth
1998 Jul 29
R1
VDD1
8
C2
L3
L7
L5
C30
L9
L11
L21
L24
L14
C7
C10
L19
L17
C26
R4
C14
C19
R5
R8
A
L15
C11
C20
IC1
C15
R9
R6
C34
C32
C21
C31
MGP211
f = 225 MHz.
Fig.12 Test circuit for class-AB operation.
BLF368
VDD2
Product specification
VDD1
C33
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
List of components class-AB test circuit (see Figs 12 and 13)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C2
multilayer ceramic chip capacitor
(note 1)
2 × 56 pF in
parallel + 18 pF,
500 V
C3
film dielectric trimmer
2 to 9 pF
C4
multilayer ceramic chip capacitor
(note 1)
47 pF, 500 V
C5
film dielectric trimmer
5 to 60 pF
2222 809 08003
C6, C7, C9, C10,
multilayer ceramic chip capacitor
C12, C15, C31, C34 (note 1)
1 nF, 500 V
2222 852 47104
C8, C11, C16, C21,
C32
multilayer ceramic chip capacitor
(note 1)
100 nF, 50 V
C17, C20, C33
electrolytic capacitor
10 µF, 63 V
C22
multilayer ceramic chip capacitor
(note 1)
82 pF, 500 V
C23
multilayer ceramic chip capacitor
(note 1)
10 pF + 30 pF in
parallel, 500 V
C24, C28
film dielectric trimmer
2 to 18 pF
C25, C26
multilayer ceramic chip capacitor
(note 1)
39 pF + 47 pF in
parallel, 500 V
C27
multilayer ceramic chip capacitor
(note 1)
18 pF, 500 V
C29, C30
multilayer ceramic chip capacitor
(note 1)
3 × 100 pF in
parallel, 500 V
L1, L3, L22, L24
stripline (note 2)
50 Ω
4.8 × 80 mm
L2, L23
semi-rigid cable (note 3)
50 Ω
ext. conductor
length 80 mm
ext. dia 3.6 mm
L4, L5
stripline (note 2)
43 Ω
6 × 32.5 mm
L6, L7
stripline (note 2)
43 Ω
6 × 10.5 mm
L8, L9
stripline (note 2)
43 Ω
6 × 3 mm
L10, L11
stripline (note 2)
43 Ω
6 × 10.5 mm
L12, L15
grade 3B Ferroxcube wideband
HF choke
2 in parallel
L13, L14
2 turns enamelled 1.6 mm copper wire 25 nH
L16, L17
stripline (notes 2 and 4)
43 Ω
6 × 3 mm
L18, L19
stripline (notes 2 and 4)
43 Ω
6 × 35 mm
L20, L21
stripline (notes 2 and 4)
43 Ω
6 × 9 mm
R1, R6
10 turns potentiometer
50 kΩ
R2, R5
metal film resistor
0.4 W, 1 kΩ
R3, R4
metal film resistor
0.4 W, 536 Ω
1998 Jul 29
9
2222 809 09005
2222 809 09006
4312 020 36642
space 2.5 mm
int. dia. 5 mm
leads 2 × 7 mm
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
COMPONENT
BLF368
DESCRIPTION
VALUE
R7, R8
metal film resistor
1 W, ±5%, 10 Ω
R9
metal film resistor
1 W, 3.16 kΩ
IC1
voltage regulator 78L05
DIMENSIONS
CATALOGUE No.
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre
PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large
RF currents.
1998 Jul 29
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
handbook, full pagewidth
BLF368
130
119
100
IC1
R9
+VDD1
to R1, R6
C31
C32
C16
L12
C17
R7
C34
L1
C12
C13
C18
C33
L2
L12
slider R1
L22
C9
L13
R2
C8
+VDD1
C6
hollow rivet
R3
C1
L4
L5
L10
L6
C4
L7
hollow rivets
C3
L8
C5
C2
R4
R5
C11
L9
C22
L11
C29
C25
L16
L20
L18
C27
C23
C24
L17
C26
L19
C10
hollow rivets
C28
L21
C30
+VDD2
L14
L3
slider R6
C7
L15
L23
L24
R8
C19
copper strap
C20
L15
C14
C15
C21
copper strap
MGP213
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
1998 Jul 29
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP242
2
MGP243
2
handbook, halfpage
handbook, halfpage
Zi
(Ω)
1
ri
ZL
(Ω)
0
−1
−2
150
RL
1
XL
xi
200
f (MHz)
0
150
250
200
f (MHz)
250
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
MGP244
20
handbook, halfpage
Gp
(dB)
16
12
8
4
0
150
200
f (MHz)
250
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.16 Power gain as a function of frequency;
typical values per section.
1998 Jul 29
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A1
D
A
F
U1
B
q
C
w2 M C
H1
1
H
c
2
E1
p
U2
5
E
w1 M A B
A
3
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
5.85
5.58
0.16
0.10
inches
0.227
0.197
0.230 0.006
0.220 0.004
OUTLINE
VERSION
D
F
H
H1
p
Q
q
U1
U2
w1
w2
w3
21.98
10.27 10.29
11.05
21.71
10.05 10.03
1.78
1.52
20.58
20.06
17.02
16.51
3.28
3.02
2.85
2.59
27.94
34.17
33.90
9.91
9.65
0.51
1.02
0.25
0.865
0.404 0.405
0.435
0.855
0.396 0.395
0.070
0.060
0.81
0.79
0.67
0.65
0.129
0.119
0.112
1.100
0.102
1.345
1.335
0.390
0.380
0.02
0.04
0.01
e
E
E1
REFERENCES
IEC
JEDEC
EIAJ
SOT262A1
1998 Jul 29
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 29
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
NOTES
1998 Jul 29
15
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Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jul 29
Document order number:
9397 750 04188