PHILIPS BLT80

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT80
UHF power transistor
Product specification
Supersedes data of May 1992
1996 May 09
Philips Semiconductors
Product specification
UHF power transistor
BLT80
FEATURES
• SMD encapsulation
• Gold metallization ensures excellent reliability.
4
handbook, halfpage
APPLICATIONS
• Hand-held radio equipment in the 900 MHz
communication band.
c
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
1
PINNING - SOT223
2
3
MAM043 - 1
Top view
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
b
base
3
e
emitter
4
c
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-B narrow band
900
7.5
0.8
≥6
≥60
1996 May 09
2
Philips Semiconductors
Product specification
UHF power transistor
BLT80
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
250
mA
IC(AV)
average collector current
−
250
mA
ICM
peak collector current
f > 1 MHz
−
750
mA
Ptot
total power dissipation
Ts = 131 °C; note 1
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ptot = 2 W; Ts = 131 °C; note 1
22
K/W
Rth j-a
thermal resistance from junction to ambient
Ptot = 2 W; Tamb = 25 °C; note 2
85
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17 mm.
MRA780 - 1
1
handbook, halfpage
IC
(A)
10−1
10−2
1
10
VCE (V)
102
Ts = 131 °C.
Fig.2 DC SOAR.
1996 May 09
3
Philips Semiconductors
Product specification
UHF power transistor
BLT80
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 2.5 mA
20
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
10
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.5 mA
3
−
V
ICES
collector leakage current
VCE = 10 V; VBE = 0
−
0.1
mA
hFE
DC current gain
VCE = 5 V; IC = 150 mA; note 1;
see Fig.3
25
−
Cc
collector capacitance
VCB = 7.5 V; IE = ie = 0; f = 1 MHz;
see Fig.4
−
3.5
pF
Cre
feedback capacitance
VCE = 7.5 V; IC = 0; f = 1 MHz
−
2.5
pF
V
Note
1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02.
MRA773
MRA776
100
handbook, halfpage
5
handbook, halfpage
hFE
Cc
(pF)
80
4
60
3
40
2
20
1
0
0
0
200
400
600
800
0
4
8
IC (mA)
DC current gain as a function of collector
current; typical values.
1996 May 09
16
20
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C.
Fig.3
12
Fig.4
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT80
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-B narrow band
900
7.5
0.8
Gp
(dB)
ηC
(%)
≥6
≥60
typ. 8
typ. 67
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts ≤ 60 °C.
MRA774
handbook, 10
halfpage
Gp
(dB)
Gp
MRA779
100
ηC
(%)
handbook,1.5
halfpage
PL
(W)
8
80
1.2
6
60
0.9
4
40
0.6
2
20
0.3
ηC
0
0
0.3
0.6
0.9
1.2
0
1.5
PL (W)
0
400
600
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Power gain and collector efficiency as
functions of load power; typical values.
1996 May 09
200
PD (mW)
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Fig.5
0
Fig.6
5
Load power as a function of drive
power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT80
Test circuit information
handbook, full pagewidth
50 Ω
input
,,, ,, ,, ,,,
C1
L5
L1
C2
L2
DUT
C3
C8
L10
L6
L7
C5
50 Ω
output
C7
L8
L3
L9
VCC
R1
L4
R2
C4
C6
MBB649
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
List of components used in test circuit (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C8
multilayer ceramic chip capacitor; note 1 100 pF
C2, C3
type 9105 Voltronix KM10 trimmer
C4
multilayer ceramic chip capacitor; note 1 220 pF
C5, C7
film dielectric trimmer
C6
multilayer ceramic chip capacitor; note 1 1 nF
L1
stripline; note 2
L2, L7
1 turn 0.4 mm copper wire on
grade 3B core
L3, L8
6 turns enamelled 0.8 mm copper wire
L4, L9
grade 3B Ferroxcube wideband
HF choke
L5
stripline; note 2
50 Ω
length 8.4 mm
width 4.85 mm
L6
stripline; note 2
50 Ω
length 20 mm
width 4.85 mm
L10
stripline; note 2
50 Ω
length 21 mm
width 4.85 mm
R1, R2
metal film resistor
10 Ω, 0.25 W
CATALOGUE No.
0.6 to 10 pF
1.4 to 5.5 pF
50 Ω
2222 809 09001
length 13 mm
width 4.85 mm
4330 030 32221
internal dia. 3 mm
4312 020 36640
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness
1⁄ "; thickness of the copper sheet 35 µm.
16
1996 May 09
6
Philips Semiconductors
Product specification
UHF power transistor
BLT80
140
handbook, full pagewidth
strap
strap
80
rivets
(14x)
strap
mounting
screws
(8x)
strap
VCC
L9
L4
C6
C4
R1
L3
L2
L1
C1
R2
L8
L7
L5
L6
C5
C2
C8
L10
C7
C3
MBB648
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
1996 May 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLT80
MRA777
10
Zi
(Ω)
MRA778
handbook, 30
halfpage
handbook, halfpage
ZL
(Ω)
25
ri
8
RL
20
6
15
4
10
xi
2
5
XL
0
800
840
880
920
960
0
800
1000
f (MHz)
840
880
920
960
1000
f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Fig.9
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Input impedance as a function of frequency
(series components); typical values.
MRA775
10
Gp
(dB)
handbook, halfpage
8
6
handbook, halfpage
4
Zi
ZL
MBA451
2
0
800
840
880
920
960
1000
f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
1996 May 09
Fig.12 Definition of transistor impedance.
8
Philips Semiconductors
Product specification
UHF power transistor
BLT80
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
10 o
max
2
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.13 SOT223.
1996 May 09
7.3
6.7
o
1
1.80
max
0.2 M A
9
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
UHF power transistor
BLT80
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 09
10
Philips Semiconductors
Product specification
UHF power transistor
BLT80
NOTES
1996 May 09
11
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SCDS48
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
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other industrial or intellectual property rights.
Printed in The Netherlands
127061/1200/02/pp12
Document order number:
Date of release: 1996 May 09
9397 750 00836