DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor BLV2046 FEATURES PINNING - SOT460A • Emitter ballasting resistors for optimum temperature profile PIN • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. SYMBOL 1 c collector 2 b base 3 e emitter, connected to flange 1 handbook, halfpage APPLICATIONS DESCRIPTION • Common emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range. 3 2 Top view DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. MBK093 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 1 990 26 50 ≥7.5 ≥40 − 2-tone, class-AB f1 = 1990.0; f2 = 1990.1 26 50 (PEP) typ. 8 typ. 33 typ. −30 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Aug 22 2 Philips Semiconductors Product specification UHF power transistor BLV2046 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 12 A IC(AV) average collector current − 12 A Ptot total power dissipation − 195 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting-base Rth mb-h thermal resistance from mounting-base to heatsink MAX. UNIT 0.9 K/W 0.2 K/W Pdis = 195 W; Tmb = 25 °C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 65 − − V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 60 mA; open base 27 − − V V(BR)EBO emitter-base breakdown voltage IE = 20 mA; IB = 30 mA; open collector 3.2 − − V ICBO collector-base leakage current VCB = 40 V; IE = 0 − 4 mA hFE DC current gain VCE = 5 V; IC = 1 A 20 − 100 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 − 60 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 40 − pF IC = 20 mA; open emitter Note 1. Die only. 1997 Aug 22 3 − V Philips Semiconductors Product specification UHF power transistor BLV2046 APPLICATION INFORMATION RF performance at Th = 25 °C in a common-emitter test circuit. ηC MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) (%) dim (dBc) CW class-AB 1990 26 200 50 ≥7.5 ≥40 − 26 200 50 (PEP) typ. 8 typ. 33 typ. −30 2-tone class-AB f1 = 1990.0; f2 = 1990.1 Ruggedness in class-AB operation The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 200 mA; PL = 50 W (PEP) and Th = 25 °C. MDA208 10 Gp Gp (dB) 8 handbook, halfpage PL (W) 40 40 ηC 6 MDA209 60 50 ηC (%) handbook, halfpage 30 4 20 20 2 10 0 0 0 20 40 PL (W) 0 60 0 2 4 6 VCE = 26 V; ICQ = 200 mA; f = 1990 MHz. VCE = 26 V; ICQ = 200 mA; f = 1990 MHz. Fig.2 Fig.3 Power gain and efficiency as a function of load power; typical values. 1997 Aug 22 4 8 PD (W) 10 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLV2046 MDA214 MDA213 10 Gp 10 Gp handbook, halfpage handbook, halfpage (1) (dB) 8 (1) (dB) (2) (2) 8 (3) (3) 6 6 (4) (4) 4 4 2 2 0 10−3 10−2 10−1 VCE = 26 V; f = 1990 MHz. (1) ICQ = 600 mA. (2) ICQ = 400 mA. Fig.4 (3) (4) 1 PD (W) 0 10 0 10 102 PL (PEP) (W) VCE = 26 V; f1 = 1990 MHz; f2 = 1990.1 MHz. (3) ICQ = 200 mA. (1) ICQ = 600 mA. (4) ICQ = 100 mA. (2) ICQ = 400 mA. ICQ = 200 mA. ICQ = 100 mA. Power gain expansion as a function of drive power; typical values. Fig.5 MDA215 0 1 Power gain expansion as a function of load power; typical values. MDA216 0 handbook, halfpage handbook, halfpage d3 (dBc) dim (dBc) −10 −20 −20 (1) d3 (2) −30 −40 (3) −40 −50 d5 (4) −60 0 20 40 PL (PEP) (W) 60 0 20 40 PL (PEP) (W) 60 VCE = 26 V; f1 = 1990 MHz; f2 = 1990.1 MHz. (3) ICQ = 400 mA. (1) ICQ = 100 mA. (4) ICQ = 600 mA. (2) ICQ = 200 mA. VCE = 26 V; ICQ = 200 mA; f1 = 1990 MHz; f2 = 1990.1 MHz. Fig.6 Fig.7 Intermodulation distortion as a function of load power; typical values. 1997 Aug 22 5 Intermodulation distortion as a function of load power; typical values. Philips Semiconductors Product specification UHF power transistor BLV2046 handbook, full pagewidth VCE (+26 V) C9 C10 VCE (+26 V) R1 TR1 C5 C4 R2 R3 P1 C11 C7 C6 D1 L2 F1 ,,,,,,,, ,,,,,,, ,, ,,,,, ,,, ,,,,,,, ,,,,,,,,,,,,,,,,, ,,,,,,, D2 L8 S3 input 50 Ω S1 L4 L3 L9 L1 T1 L10 L11 L14 L7 L6 L5 L13 L12 L15 output 50 Ω C8 C1 MGK450 C3 S2 S4 C2 Fig.8 Class-AB test circuit for 1990 MHz. List of components COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C8 multilayer ceramic chip capacitor; note 1 30 pF C2, C3 trimmer capacitor 0.4 to 2.5 pF C4, C5 feedthrough bypass capacitor 1500 pF C6, C7 tantal SMD capacitor 10 µF; 35 V C9 electrolytic capacitor 10 µF; 100 V C10 multilayer ceramic chip capacitor 22 nF C11 electrolytic capacitor 10 µF; 63 V L1 5 turns enamelled 0.5 mm copper wire int. dia. = 4 mm; length = 6.7 mm L2 2 turns enamelled 0.5 mm copper wire int. dia. = 4 mm; length = 2.7 mm L3 stripline; note 2 48.8 Ω 2222 629 08223 5.34 × 0.59 mm L4 stripline; note 2 17 Ω 1.2 × 3.23 mm L5 stripline; note 2 48.8 Ω 2.93 × 0.59 mm 1997 Aug 22 6 CATALOGUE NO. Philips Semiconductors Product specification UHF power transistor COMPONENT L6 BLV2046 DESCRIPTION VALUE stripline; note 2 DIMENSIONS 48.8 Ω 6.63 × 0.59 mm L7 stripline; note 2 17.1 Ω 1.6 × 3.2 mm L8 stripline; note 2 6.8 Ω 6 × 9.6 mm L9 stripline; note 2 6.8 Ω 9.11 × 9.6 mm L10 stripline; note 2 16.6 Ω 5.09 × 3.32 mm L11 stripline; note 2 10.9 Ω 0.85 × 5.59 mm L12 stripline; note 2 31.9 Ω 9.26 × 1.3 mm L13 stripline; note 2 48.8 Ω 0.24 × 0.59 mm L14 stripline; note 2 11.9 Ω 1.15 × 5.04 mm L15 stripline; note 2 48.8 Ω 2.5 × 0.59 mm S1 stub; note 2 2.4 × 2.17 mm S2 stub; note 2 2.4 × 3.04 mm S3 stub; note 2 0.9 × 8.63 mm S4 stub; note 2 0.9 × 7.29 mm T1 taper; note 2 1.3 × 2.7 / 3.2 mm F1 grade 4B1 ferrite bead P1 linear potentiometer 5 kΩ R1 resistor 100 Ω, 3 W R2 resistor 1 kΩ, 0.25 W R3 resistor 56 Ω, 3 W TR1 transistor BD241C D1 diode, note 3 BY239 D2 diode, note 4 BY239 CATALOGUE NO. 4330 030 43081 Notes 1. American Technical Ceramics type 100A (C1), type 100B (C8) or capacitor of same quality. 2. The striplines are on a double copper-clad PCB with duroid 6 010 dielectric (εr = 10.2); thickness 0.635 mm. 3. In thermal contact with TR1. 4. In thermal contact with DUT. 1997 Aug 22 7 Philips Semiconductors Product specification UHF power transistor BLV2046 30 handbook, full pagewidth 30 40 +VBE +VCE C4 F1 C6 input 50 Ω C5 C7 output 50 Ω L2 L1 C1 C8 C3 C2 MGK451 Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.9 Component layout and printed-circuit board for 1990 MHz class-AB test circuit. 1997 Aug 22 8 Philips Semiconductors Product specification UHF power transistor BLV2046 MDA210 3 MDA211 4 handbook, halfpage handbook, halfpage ZL (Ω) ri Zi RL (Ω) 2 2 xi 0 1 −2 XL 0 1800 1850 1900 1950 f (MHz) −4 1800 2000 1850 1900 1950 f (MHz) 2000 VCE = 26 V; ICQ = 400 mA; PL = 50 W; Tmb = 25 °C. VCE = 26 V; ICQ = 400 mA; PL = 50 W; Tmb = 25 °C. Fig.11 Load impedance as a function of the frequency (series components); typical values. Fig.10 Input impedance as function of the frequency (series components); typical values. MDA212 16 handbook, halfpage Gp (dB) 12 handbook, halfpage 8 Zi ZL 4 0 1800 1850 1900 1950 MBA451 2000 f (MHz) VCE = 26 V; ICQ = 200 mA; PL = 50 W; Tmb = 25 °C. Fig.12 Gain as a function of the frequency; typical values. 1997 Aug 22 Fig.13 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLV2046 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT460A D A F 3 U1 B q c C 1 L U2 E w1 M A B p A L 2 w2 M C b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E F L p Q q U1 U2 w1 w2 mm 5.39 4.49 9.78 9.52 0.16 0.07 12.45 11.68 6.94 6.22 1.66 1.39 6.10 5.33 3.28 3.02 2.37 1.95 17.98 22.99 22.73 6.43 6.17 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT460A 1997 Aug 22 EUROPEAN PROJECTION ISSUE DATE 97-05-23 10 Philips Semiconductors Product specification UHF power transistor BLV2046 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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