DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature profile PIN • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS SYMBOL DESCRIPTION 1 c collector 2 b base 3 e emitter, connected to flange columns 1 c • Common emitter class-AB operation in base station transmitters in the 1800 to 2000 MHz frequency range. b 3 DESCRIPTION e 2 NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. MAM112 Top view Fig.1 SOT437A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 1950 26 15 ≥8 ≥40 − CW, class-AB 1990 26 15 ≥8 ≥40 − 2-tone, class-AB f1 = 1950; f2 = 1950.1 26 15 (PEP) typ. 8.5 typ. 35 typ. −30 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Nov 14 2 Philips Semiconductors Product specification UHF power transistor BLV2044 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 3 A IC(AV) average collector current − 3 A Ptot total power dissipation − 57 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Ptot = 57 W; Tmb = 25 °C MGG283 10 VALUE UNIT 3.07 K/W 0.4 K/W MGG284 80 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 60 (1) (2) (2) 1 40 (1) 20 10−1 1 10 VCE (V) 0 102 0 80 120 160 Th (°C) (1) Tmb =25 °C. (2) Th = 70 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1996 Nov 14 40 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power transistor BLV2044 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 60 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 28 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 2.5 − − V ICES collector leakage current VCE = 12.5 V; VBE = 0 − − 4 mA hFE DC current gain VCE = 26 V; IC = 1 A 45 100 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 − 16 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 8 − pF Note 1. Capacitance of die only. MGG285 120 MGG286 30 handbook, halfpage handbook, halfpage (1) Cre (pF) hFE (2) 80 20 40 10 0 0 0 1 2 3 4 IC (A) 5 0 20 30 40 VCE (V) (1) VCE = 26 V; tp = 500 µs; δ = < 1 %. (2) VCE = 10 V. f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1996 Nov 14 10 4 Feedback capacitance as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV2044 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit. Gp (dB) ηC (%) ≥8 ≥40 typ. 8.5 typ. 45 15 ≥8 ≥40 − 15 (PEP) typ. 8.5 typ. 35 typ. −30 MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) CW, class-AB 1950 26 40 15 CW, class-AB (note 1) 1990 26 40 2-tone, class-AB f1 = 1950, f2 = 1950.1 26 40 dim (dBc) − Note 1. See application note BLV2044. Ruggedness in class-AB operation The BLV2044 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 °C. MGG287 12 handbook, halfpage GP (dB) 60 ηC (%) GP 8 MGG288 24 handbook, halfpage PL (W) 40 16 20 8 ηC 4 0 0 8 16 PL (W) 0 24 0 0 1 2 3 5 PD (W) VCE = 26 V; ICQ = 40 mA; f = 1950 MHz. VCE = 26 V; ICQ = 40 mA; f = 1950 MHz. Fig.6 Fig.7 Power gain and collector efficiency as functions of load power; typical values. 1996 Nov 14 4 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLV2044 MGG289 12 MGD245 0 handbook, halfpage handbook, halfpage GP (dB) dim (dBc) (1) 8 −20 (2) d3 (3) d5 −40 4 d7 0 10−3 10−2 10−1 1 VCE = 26 V; f = 1950 MHz. (1) ICQ = 120 mA. (2) ICQ = 80 mA. Fig.8 PD (W) −60 10 0 (3) ICQ = 40 mA. Fig.9 MGD244 0 handbook, halfpage d3 (dBc) −20 (1) (2) (3) −40 −60 5 10 15 20 25 PL (PEP) (W) VCE = 26 V; f1 = 1950 MHz; f2 = 1950.1 MHz. (1) ICQ = 20 mA. (2) ICQ = 40 mA. (3) ICQ = 60 mA. Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values. 1996 Nov 14 10 15 20 25 PL (PEP) (W) VCE = 26 V; ICQ = 40 mA; f1 = 1950 MHz; f2 = 1950.1 MHz. Power gain as a function of drive power; typical values. 0 5 6 Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power transistor BLV2044 Test circuit information R1 handbook, full pagewidth C5 L5 +Vbias C7 +VCC L10 C3 C2 C8 L4 L9 L6 L3 50 Ω input C1 L1 L8 L7 C9 L2 DUT 50 Ω output C6 C4 MGG290 Fig.11 Class-AB test circuit for 1.8 to 2 GHz. List of components (see Figs 11 and 12) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C9 multilayer ceramic chip capacitor; note 1 30 pF C2 tantalum SMD capacitor 10 µF; 35 V C3 multilayer ceramic chip capacitor 22 nF C4 multilayer ceramic chip capacitor; note 1 1.1 pF C5, C7 multilayer ceramic chip capacitor; note 2 20 pF C6 multilayer ceramic chip capacitor; note 1 1.2 pF C8 multilayer ceramic chip capacitor 100 nF L1 stripline; note 3 31 Ω length 7.8 mm width 2 mm L2 stripline; note 3 40 Ω length 8.8 mm width 1.4 mm L3 stripline; note 3 10 Ω length 8 mm width 8 mm L4 5 turns enamelled 1 mm copper wire 38 nH length 8 mm int. dia. 3 mm L5, L10 grade 4S2 ferroxcube chip-bead L6 stripline; note 3 12 Ω length 5 mm width 7 mm L7 stripline; note 3 40 Ω length 6.7 mm width 1.4 mm 1996 Nov 14 CATALOGUE NO. 2222 629 08223 2222 852 47104 4330 030 36301 7 Philips Semiconductors Product specification UHF power transistor COMPONENT BLV2044 DESCRIPTION VALUE DIMENSIONS L8 stripline; note 3 23 Ω length 6.4 mm width 3 mm L9 2 turns enamelled 1 mm copper wire 9 nH length 4 mm int. dia. 3 mm R1 metal film resistor 10 Ω; 0.4 W CATALOGUE NO. 2311 153 51009 Notes 1. American Technical Ceramics type 100A or capacitor of the same quality. 2. American Technical Ceramics type 100B or capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (εr = 6.15); thickness 0.64 mm. 1996 Nov 14 8 Philips Semiconductors Product specification UHF power transistor BLV2044 36.1 30 handbook, full pagewidth 40 +VCC +Vbias L5 C2 C3 L10 C5 C7 L4 50 Ω input L1 L2 C8 R1 L9 L3 L6 C1 L7 50 Ω output L8 C9 C6 C4 MGG291 Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.12 Component layout and printed-circuit board for 1.8 to 2 GHz class-AB test circuit. 1996 Nov 14 9 Philips Semiconductors Product specification UHF power transistor BLV2044 MGD246 MGD247 12 15 handbook, halfpage handbook, halfpage ZL (Ω) xi Zi (Ω) RL 10 8 5 ri 0 XL 4 −5 0 1700 1800 1900 f (MHz) −10 1700 2000 1800 1900 f (MHz) 2000 VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 °C. VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 °C. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. MGD248 12 handbook, halfpage Gp (dB) 8 handbook, halfpage Zi 4 0 1700 ZL 1800 1900 f (MHz) MBA451 2000 VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 °C. Fig.15 Power gain as a function of frequency; typical values. 1996 Nov 14 Fig.16 Definition of transistor impedance. 10 Philips Semiconductors Product specification UHF power transistor BLV2044 PACKAGE OUTLINE 19.1 max 0.13 max 6.5 max 1.7 max 4.8 max 2.3 2.0 seating plane 14.22 1 0.25 M 4.5 min 6.5 6.2 O 3.3 3 4.5 min 2 1.7 max MBB945 Dimensions in mm. Recommended screw: M3. Torque on screws: max. 0.5 Nm. Fig.17 SOT437A. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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