DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range. 3 3 2 MBK051 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) VCB (V) PL (W) Gp (dB) ηC (%) 3.1 to 3.5 40 20 typ. 8 typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 01 2 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCES collector-emitter voltage RBE = 0 − 75 V VEBO emitter-base voltage open collector − 2 V ICM peak collector current tp ≤ 100 µs; δ ≤ 10% − 2 A Ptot total power dissipation tp = 100 µs; δ = 10%; Tmb = 25 °C − 80 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C up to 0.2 mm from ceramic cap; t ≤ 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS thermal impedance from junction to heatsink VALUE UNIT tp = 100 µs; δ = 10%; note 1 2 K/W tp = 200 µs; δ = 10%; note 1 2.45 K/W tp = 300 µs; δ = 10%; note 1 2.75 K/W MAX. UNIT Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 15 mA; open emitter MIN. 75 − V 75 − V V(BR)CBO collector-base breakdown voltage V(BR)CES collector-emitter breakdown voltage IC = 15 mA; VBE = 0 ICBO collector leakage current VCB = 40 V; IE = 0 − 0.5 mA ICES collector leakage current VCE = 40 V; VBE = 0 − 1 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 − 0.1 mA hFE DC current gain VCB = 5 V; IC = 1.5 A 40 − APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (W) Gp (dB) ηC (%) Class-C; tp = 100 µs; δ = 10% 3.1 to 3.5 40 ≥20 typ. 22 ≥7 typ. 8 ≥35 typ. 40 2000 Feb 01 3 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 MCD863 25 PL handbook, halfpage (1) (2) (3) (W) 20 MCD864 10 Gp handbook, halfpage (1) (2) (3) (dB) 8 15 6 10 4 5 2 0 0 0 1 2 3 PD (W) 4 10 15 20 25 PL (W) VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.2 5 0 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Load power as a function of drive power; typical values. Fig.3 MCD865 50 ηC Power gain as a function of load power; typical values. MCD866 10 Gp handbook, halfpage handbook, halfpage (dB) 40 (dB) 8 (1) (2) 50 ηC Gp (%) ηC 40 (3) 30 6 30 20 4 20 10 2 10 0 0 5 0 10 15 20 3 25 PL (W) VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.4 3.4 f (GHz) 0 3.6 VCB = 40 V; class-C; PL = 20 W; tp = 100 µs; δ = 10%. Collector efficiency as a function of load power; typical values. 2000 Feb 01 3.2 Fig.5 4 Power gain and efficiency as functions of frequency; typical values. Philips Semiconductors Product specification Microwave power transistor BLS3135-20 MCD867 15 zi (Ω) MCD868 15 ZL handbook, halfpage handbook, halfpage (Ω) 10 10 RL ri 5 5 0 0 −5 −5 xi −10 3 3.2 3.4 f (GHz) XL −10 3.6 3 3.2 VCB = 40 V; class-C; PL = 20 W. VCB = 40 V; class-C; PL = 20 W. Fig.6 Fig.7 Input impedance as a function of frequency (series components); typical values. 2000 Feb 01 5 3.4 f (GHz) 3.6 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor handbook, full pagewidth BLS3135-20 30 30 40 C2 C1 MCD869 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = C2 = 4.7 pF (ATC 100A). Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2000 Feb 01 6 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A D A F 3 D1 U1 B q C c 1 L H p U2 E1 E w1 M A M B M A L 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 5.72 4.83 5.21 4.95 0.13 0.08 9.93 9.68 10.29 10.03 8.76 8.51 10.29 10.03 1.58 1.47 19.18 17.65 4.52 3.74 3.43 3.18 3.35 2.92 16.51 22.99 22.73 9.91 9.65 0.25 0.76 inches 0.225 0.190 0.205 0.195 0.005 0.003 0.391 0.381 0.405 0.395 0.345 0.335 0.405 0.395 0.062 0.058 0.755 0.695 0.178 0.147 0.135 0.125 0.132 0.115 0.65 0.905 0.895 0.390 0.380 0.01 0.03 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT422A 2000 Feb 01 EUROPEAN PROJECTION ISSUE DATE 99-03-29 7 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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