PHILIPS BLT52

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
Philips Semiconductors
Product specification
UHF power transistor
BLT52
FEATURES
PINNING
• Emitter ballasting resistors for an optimum
temperature profile
PIN
DESCRIPTION
1, 4, 5, 8
• Gold metallization ensures excellent reliability.
emitter
2, 3
base
6, 7
collector
APPLICATIONS
• Common emitter class-B operation in portable radio
transmitters in the 470 MHz communication band.
handbook, halfpage
8
5
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A SMD package.
1
4
Top view
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
CW, class-B
1998 Jan 28
f
(MHz)
VCE
(V)
PL
(W)
7.5
7
6
3
470
2
Gp
(dB)
ηC
(%)
≥8
≥50
typ. 9.5
typ. 65
≥8
≥50
typ. 9.5
typ. 55
Philips Semiconductors
Product specification
UHF power transistor
BLT52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2.5
A
Ptot
total power dissipation
Tmb ≤ 60 °C
−
13
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base
Rth j-mb
MGM485
10
handbook, halfpage
IC
(A)
1
10−1
1
10
VCE (V)
102
Tmb = 60 °C.
Fig.2 DC SOAR.
1998 Jan 28
3
Ptot = 13 W; Tmb ≤ 60 °C
VALUE
UNIT
8
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 20 mA
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 40 mA
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 4 mA
3
−
−
V
ICES
collector leakage current
VBE = 0; VCE = 7.5 V
−
−
1
mA
hFE
DC current gain
IC = 1.2 A; VCE = 5 V
25
−
−
Cc
collector capacitance
IE = ie = 0; VCB = 7.5 V; f = 1 MHz
−
24
−
pF
Cre
feedback capacitance
IC = 0; VCE = 7.5 V; f = 1 MHz
−
17
−
pF
MGM486
MGM487
100
50
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
80
40
60
30
40
20
20
10
0
0.4
0
0.8
1.2
0
1.6
2.0
IC (mA)
0
VCE = 5 V; Tj = 25 °C.
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.
Fig.3
8
12
16
20
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of collector
current; typical values.
1998 Jan 28
4
Fig.4
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT52
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
f
(MHz)
MODE OF OPERATION
CW, class-B
VCE
(V)
PL
(W)
7.5
7
470
6
3
Gp
(dB)
ηC
(%)
≥8
≥50
typ. 9.5
typ. 65
≥8
≥50
typ. 9.5
typ. 55
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb ≤ 60 °C.
MBK250
10
handbook, halfpage
Gp
(dB)
8
Gp
MGD257
100
ηC
(%)
10
handbook, halfpage
PL
(W)
80
8
60
6
4
40
4
2
20
2
0
0
6
ηC
0
0
2
4
6
PL (W)
8
0
1
2
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
Fig.5
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
1998 Jan 28
5
PIN (W)
3
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MBK251
12
Gp
(dB)
10
handbook, halfpage
Gp
8
MGD259
80
ηC
(%)
70
10
handbook, halfpage
PL
(W)
8
60
6
ηC
6
50
4
4
40
2
30
0
0
2
4
6
8
PL (W)
2
20
10
0
0
0.5
1.0
1.5
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;
tuned at PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;
tuned at PL = 7 W; Tmb ≤ 60 °C.
Fig.7
Fig.8
Power gain and collector efficiency as
functions of load power; typical values.
MBK252
20
2.0
PIN (W)
Load power as a function of input power;
typical values.
MBK253
16
handbook, halfpage
handbook, halfpage
Gp
(dB)
Gp
(dB)
16
12
12
8
8
4
4
0
100
150
200
250
0
400
300
f (MHz)
420
440
460
480
f (MHz)
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.9
Fig.10 Power gain as a function of frequency;
typical values.
Power gain as a function of frequency;
typical values.
1998 Jan 28
6
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MBK254
4
MBK255
6
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
2
ri
RL
4
0
XL
2
−2
xi
0
−4
−6
100
150
200
250
−2
100
300
f (MHz)
150
200
250
300
f (MHz)
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.11 Input impedance as a function of frequency
(series components); typical values.
Fig.12 Load impedance as a function of frequency
(series components); typical values.
MGD260
MGD261
1.2
4
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
ri
RL
3
0.8
xi
2
0.4
1
XL
0
400
420
440
460
0
400
480
f (MHz)
420
440
460
f (MHz)
480
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
1998 Jan 28
7
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
full pagewidth
1.87 (2×)
0.60 (4×)
0.80 (2×)
0.50 (12×)
7.38 3.60
1.00 (8×)
1.00 (9×)
4.60
MGK390
Dimensions in mm.
Fig.15 Reflow soldering footprint for SOT409A.
1998 Jan 28
8
Philips Semiconductors
Product specification
UHF power transistor
BLT52
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
L
E2
H
E
A
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-06-28
SOT409A
1998 Jan 28
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLT52
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 28
10
Philips Semiconductors
Product specification
UHF power transistor
BLT52
NOTES
1998 Jan 28
11
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© Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
125108/00/03/pp12
Date of release: 1998 Jan 28
Document order number:
9397 750 03238