DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor Product specification Supersedes data of 1997 Oct 15 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor BLT52 FEATURES PINNING • Emitter ballasting resistors for an optimum temperature profile PIN DESCRIPTION 1, 4, 5, 8 • Gold metallization ensures excellent reliability. emitter 2, 3 base 6, 7 collector APPLICATIONS • Common emitter class-B operation in portable radio transmitters in the 470 MHz communication band. handbook, halfpage 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 4 Top view MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION CW, class-B 1998 Jan 28 f (MHz) VCE (V) PL (W) 7.5 7 6 3 470 2 Gp (dB) ηC (%) ≥8 ≥50 typ. 9.5 typ. 65 ≥8 ≥50 typ. 9.5 typ. 55 Philips Semiconductors Product specification UHF power transistor BLT52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 2.5 A Ptot total power dissipation Tmb ≤ 60 °C − 13 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to mounting base Rth j-mb MGM485 10 handbook, halfpage IC (A) 1 10−1 1 10 VCE (V) 102 Tmb = 60 °C. Fig.2 DC SOAR. 1998 Jan 28 3 Ptot = 13 W; Tmb ≤ 60 °C VALUE UNIT 8 K/W Philips Semiconductors Product specification UHF power transistor BLT52 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 20 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 40 mA 10 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 4 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 7.5 V − − 1 mA hFE DC current gain IC = 1.2 A; VCE = 5 V 25 − − Cc collector capacitance IE = ie = 0; VCB = 7.5 V; f = 1 MHz − 24 − pF Cre feedback capacitance IC = 0; VCE = 7.5 V; f = 1 MHz − 17 − pF MGM486 MGM487 100 50 handbook, halfpage handbook, halfpage Cc (pF) hFE 80 40 60 30 40 20 20 10 0 0.4 0 0.8 1.2 0 1.6 2.0 IC (mA) 0 VCE = 5 V; Tj = 25 °C. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001. Fig.3 8 12 16 20 VCB (V) IE = ie = 0; f = 1 MHz; Tj = 25 °C. DC current gain as a function of collector current; typical values. 1998 Jan 28 4 Fig.4 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT52 APPLICATION INFORMATION RF performance at Tmb ≤ 60 °C in a common emitter test circuit. f (MHz) MODE OF OPERATION CW, class-B VCE (V) PL (W) 7.5 7 470 6 3 Gp (dB) ηC (%) ≥8 ≥50 typ. 9.5 typ. 65 ≥8 ≥50 typ. 9.5 typ. 55 Ruggedness in class-B operation The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb ≤ 60 °C. MBK250 10 handbook, halfpage Gp (dB) 8 Gp MGD257 100 ηC (%) 10 handbook, halfpage PL (W) 80 8 60 6 4 40 4 2 20 2 0 0 6 ηC 0 0 2 4 6 PL (W) 8 0 1 2 CW, class-B operation; f = 470 MHz; VCE = 6 V; tuned at PL = 3 W; Tmb ≤ 60 °C. CW, class-B operation; f = 470 MHz; VCE = 6 V; tuned at PL = 3 W; Tmb ≤ 60 °C. Fig.5 Fig.6 Power gain and collector efficiency as functions of load power; typical values. 1998 Jan 28 5 PIN (W) 3 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor BLT52 MBK251 12 Gp (dB) 10 handbook, halfpage Gp 8 MGD259 80 ηC (%) 70 10 handbook, halfpage PL (W) 8 60 6 ηC 6 50 4 4 40 2 30 0 0 2 4 6 8 PL (W) 2 20 10 0 0 0.5 1.0 1.5 CW, class-B operation; f = 470 MHz; VCE = 7.5 V; tuned at PL = 7 W; Tmb ≤ 60 °C. CW, class-B operation; f = 470 MHz; VCE = 7.5 V; tuned at PL = 7 W; Tmb ≤ 60 °C. Fig.7 Fig.8 Power gain and collector efficiency as functions of load power; typical values. MBK252 20 2.0 PIN (W) Load power as a function of input power; typical values. MBK253 16 handbook, halfpage handbook, halfpage Gp (dB) Gp (dB) 16 12 12 8 8 4 4 0 100 150 200 250 0 400 300 f (MHz) 420 440 460 480 f (MHz) CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. Fig.9 Fig.10 Power gain as a function of frequency; typical values. Power gain as a function of frequency; typical values. 1998 Jan 28 6 Philips Semiconductors Product specification UHF power transistor BLT52 MBK254 4 MBK255 6 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 2 ri RL 4 0 XL 2 −2 xi 0 −4 −6 100 150 200 250 −2 100 300 f (MHz) 150 200 250 300 f (MHz) CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. Fig.11 Input impedance as a function of frequency (series components); typical values. Fig.12 Load impedance as a function of frequency (series components); typical values. MGD260 MGD261 1.2 4 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) ri RL 3 0.8 xi 2 0.4 1 XL 0 400 420 440 460 0 400 480 f (MHz) 420 440 460 f (MHz) 480 CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. 1998 Jan 28 7 Philips Semiconductors Product specification UHF power transistor BLT52 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. full pagewidth 1.87 (2×) 0.60 (4×) 0.80 (2×) 0.50 (12×) 7.38 3.60 1.00 (8×) 1.00 (9×) 4.60 MGK390 Dimensions in mm. Fig.15 Reflow soldering footprint for SOT409A. 1998 Jan 28 8 Philips Semiconductors Product specification UHF power transistor BLT52 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 L E2 H E A e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7° 0° inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-28 SOT409A 1998 Jan 28 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power transistor BLT52 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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