PHILIPS SI4410DY

Si4410DY
N-channel enhancement mode field-effect transistor
Rev. 02 — 05 July 2001
M3D315
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4410DY in SOT96-1 (SO8).
2. Features
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
c
c
■
■
■
■
■
DC to DC convertors
DC motor control
Lithium ion battery applications
Notebook PC
Portable equipment applications.
4. Pinning information
Table 1:
Pinning - SOT96-1, simplified outline and symbol
Pin
Description
1,2,3
source (s)
4
gate (g)
5,6,7,8
drain (d)
Simplified outline
8
5
1
4
MBK187
SOT96-1 (SO8)
TrenchMOS is a trademark of Royal Philips Electronics.
d
g
Top view
1.
Symbol
MBB076
s
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
30
V
ID
drain current
Tamb = 25 °C; pulsed; tp ≤ 10 s
−
10
A
Ptot
total power dissipation
Tamb = 25 °C; pulsed; tp ≤ 10 s
−
2.5
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C
11
13.5
mΩ
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
15
20
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current
IDM
peak drain current
Ptot
total power dissipation
Conditions
Min
Max
Unit
Tj = 25 to 150 °C
−
30
V
−
±20
V
Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3
−
10
A
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2
−
8
A
Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
−
50
A
Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 1
−
2.5
W
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1
−
1.6
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
−
2.3
A
Source-drain diode
IS
source (diode forward) current
Tamb = 25 °C; pulsed; tp ≤ 10 s
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
2 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa11
03aa19
120
Pder
120
Ider
(%)
100
(%)
100
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
0
150
175
o
Tamb ( C)
P tot
P der = ---------------------- × 100%
P
°
25
50
75
100
125
150
175
o
Tamb ( C)
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ae23
102
ID
(A)
tp = 10 µs
RDSon = VDS / ID
1 ms
10
10 ms
1
100 ms
δ=
P
10-1
tp
D.C.
T
10 s
t
tp
T
10-2
10-1
1
102
10
VDS (V)
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
3 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-a)
thermal resistance from junction to ambient
Conditions
Value Unit
mounted on a printed circuit board; tp ≤ 10 s;
minimum footprint; Figure 4
50
K/W
7.1 Transient thermal impedance
03ad49
102
Zth(j-amb)
(K/W)
10
δ = 0.5
0.2
0.1
0.05
0.02
1
δ=
P
10-1
tp
T
single pulse
t
tp
T
10-2
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
Tamb = 25 °C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
4 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
1
−
−
V
Tj = 25 °C
−
−
1
µA
Tj = 55 °C
−
−
25
µA
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C; Figure 9
IDSS
drain-source leakage current
VDS = 30 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
−
−
100
nA
ID(on)
On-state drain current
VDS ≥ 5; VGS = 10 V
20
−
−
A
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Figure 7 and 8
−
11
13.5
mΩ
VGS = 4.5 V; ID = 5 A; Figure 7 and 8
−
15
20
mΩ
Dynamic characteristics
gfs
forward transconductance
VDS = 15 V; ID = 10 A; Figure 11
−
34
−
S
Qg(tot)
total gate charge
ID = 10 A; VDD = 15 V; VGS = 5 V; Figure 14
−
21.5
34
nC
Qg(tot)
total gate charge
ID = 10 A; VDD = 15 V; VGS = 10 V; Figure 14
−
40
60
nC
Qgs
gate-source charge
−
8
−
nC
Qgd
gate-drain (Miller) charge
−
7
−
nC
td(on)
turn-on delay time
−
13.5
30
ns
tr
rise time
−
9
20
ns
td(off)
turn-off delay time
−
70
100
ns
tf
fall time
−
30
80
ns
−
0.7
1.1
V
−
50
80
ns
VDD = 25 V; RD = 25 Ω; VGS = 10 V; RG = 6 Ω
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 13
trr
reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
5 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ad50
03ad52
50
50
10 V
ID
(A)
40
5V
3.8 V
ID
(A)
40
3.6 V
VDS > ID x RDSon
3.4 V
30
30
3.2 V
20
20
3V
2.8 V
10
10
Tj = 150 ºC
VGS = 2.6 V
25 ºC
0
0
0
0.5
1
VDS (V)
1.5
0
Tj = 25 °C
2
3
VGS (V)
4
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ad51
Tj = 25 ºC VGS = 3.2 V
3.4 V
03ad57
2
0.03
RDSon
1
3.6 V 3.8 V
a
(Ω)
1.6
0.02
1.2
4.5 V
5V
0.8
10 V
0.01
0.4
0
0
0
10
20
30
40
ID (A)
50
-60
Tj = 25 °C
0
60
120
Tj (ºC)
180
R DSon
a = --------------------------R
°
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
6 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa33
2.5
(V)
03aa36
10-1
ID
(A)
10-2
VGS(th)
max
2
typ
10-3
1.5
min
min
1
10-5
0
10-6
0
max
10-4
0.5
-60
typ
60
120
o
180
0
0.5
1
1.5
2
Tj ( C)
ID = 250 µA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03ae24
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ad54
104
40
gfs
2.5
3
VGS (V)
VDS > ID x RDSon
(S)
C
30
(pF)
Tj = 25 ºC
150 ºC
Ciss
103
20
Coss
10
Crss
0
10
0
10
20
30
40
ID (A)
10-1
50
Tj = 25 °C and 150 °C; VDS > ID × RDSon
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
1
Rev. 02 — 05 July 2001
7 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ad53
03ad55
50
10
IS
VGS
VGS = 0 V
(A)
40
ID = 10 A
(V)
8
VDD = 15 V
Tj = 25 ºC
30
6
20
4
10
2
150 ºC
Tj = 25 ºC
0
0
0
0.4
0.8
1.2
VSD (V)
1.6
0
Tj = 25 °C and 150 °C; VGS = 0 V
20
30
QG (nC)
40
ID = 10 A; VDD = 15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
10
Rev. 02 — 05 July 2001
8 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
o
8
0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03S
MS-012AA
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
Fig 15. SOT96-1 (SO8).
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
9 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
02
20010705
-
Correction to IDM condition
01
20010220
-
Product specification; initial version
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
10 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Data sheet status [1]
Product status [2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
11 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
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Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
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Internet: http://www.semiconductors.philips.com
(SCA72)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
12 of 13
Si4410DY
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 05 July 2001
Document order number: 9397 750 08048