Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8). 2. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. 3. Applications c c ■ ■ ■ ■ ■ DC to DC convertors DC motor control Lithium ion battery applications Notebook PC Portable equipment applications. 4. Pinning information Table 1: Pinning - SOT96-1, simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d) Simplified outline 8 5 1 4 MBK187 SOT96-1 (SO8) TrenchMOS is a trademark of Royal Philips Electronics. d g Top view 1. Symbol MBB076 s Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS drain-source voltage (DC) Conditions Typ Max Unit Tj = 25 to 150 °C − 30 V ID drain current Tamb = 25 °C; pulsed; tp ≤ 10 s − 10 A Ptot total power dissipation Tamb = 25 °C; pulsed; tp ≤ 10 s − 2.5 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C 11 13.5 mΩ VGS = 4.5 V; ID = 5 A; Tj = 25 °C 15 20 mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VGS gate-source voltage (DC) ID drain current IDM peak drain current Ptot total power dissipation Conditions Min Max Unit Tj = 25 to 150 °C − 30 V − ±20 V Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 − 10 A Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2 − 8 A Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 50 A Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 1 − 2.5 W Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1 − 1.6 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C − 2.3 A Source-drain diode IS source (diode forward) current Tamb = 25 °C; pulsed; tp ≤ 10 s © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 2 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa11 03aa19 120 Pder 120 Ider (%) 100 (%) 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 0 150 175 o Tamb ( C) P tot P der = ---------------------- × 100% P ° 25 50 75 100 125 150 175 o Tamb ( C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ae23 102 ID (A) tp = 10 µs RDSon = VDS / ID 1 ms 10 10 ms 1 100 ms δ= P 10-1 tp D.C. T 10 s t tp T 10-2 10-1 1 102 10 VDS (V) Tamb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 3 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions Value Unit mounted on a printed circuit board; tp ≤ 10 s; minimum footprint; Figure 4 50 K/W 7.1 Transient thermal impedance 03ad49 102 Zth(j-amb) (K/W) 10 δ = 0.5 0.2 0.1 0.05 0.02 1 δ= P 10-1 tp T single pulse t tp T 10-2 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Tamb = 25 °C Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 4 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit 1 − − V Tj = 25 °C − − 1 µA Tj = 55 °C − − 25 µA Static characteristics VGS(th) gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C; Figure 9 IDSS drain-source leakage current VDS = 30 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V − − 100 nA ID(on) On-state drain current VDS ≥ 5; VGS = 10 V 20 − − A RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Figure 7 and 8 − 11 13.5 mΩ VGS = 4.5 V; ID = 5 A; Figure 7 and 8 − 15 20 mΩ Dynamic characteristics gfs forward transconductance VDS = 15 V; ID = 10 A; Figure 11 − 34 − S Qg(tot) total gate charge ID = 10 A; VDD = 15 V; VGS = 5 V; Figure 14 − 21.5 34 nC Qg(tot) total gate charge ID = 10 A; VDD = 15 V; VGS = 10 V; Figure 14 − 40 60 nC Qgs gate-source charge − 8 − nC Qgd gate-drain (Miller) charge − 7 − nC td(on) turn-on delay time − 13.5 30 ns tr rise time − 9 20 ns td(off) turn-off delay time − 70 100 ns tf fall time − 30 80 ns − 0.7 1.1 V − 50 80 ns VDD = 25 V; RD = 25 Ω; VGS = 10 V; RG = 6 Ω Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 13 trr reverse recovery time IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 5 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 03ad50 03ad52 50 50 10 V ID (A) 40 5V 3.8 V ID (A) 40 3.6 V VDS > ID x RDSon 3.4 V 30 30 3.2 V 20 20 3V 2.8 V 10 10 Tj = 150 ºC VGS = 2.6 V 25 ºC 0 0 0 0.5 1 VDS (V) 1.5 0 Tj = 25 °C 2 3 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ad51 Tj = 25 ºC VGS = 3.2 V 3.4 V 03ad57 2 0.03 RDSon 1 3.6 V 3.8 V a (Ω) 1.6 0.02 1.2 4.5 V 5V 0.8 10 V 0.01 0.4 0 0 0 10 20 30 40 ID (A) 50 -60 Tj = 25 °C 0 60 120 Tj (ºC) 180 R DSon a = --------------------------R ° DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 6 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa33 2.5 (V) 03aa36 10-1 ID (A) 10-2 VGS(th) max 2 typ 10-3 1.5 min min 1 10-5 0 10-6 0 max 10-4 0.5 -60 typ 60 120 o 180 0 0.5 1 1.5 2 Tj ( C) ID = 250 µA; VDS = VGS Tj = 25 °C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. 03ae24 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ad54 104 40 gfs 2.5 3 VGS (V) VDS > ID x RDSon (S) C 30 (pF) Tj = 25 ºC 150 ºC Ciss 103 20 Coss 10 Crss 0 10 0 10 20 30 40 ID (A) 10-1 50 Tj = 25 °C and 150 °C; VDS > ID × RDSon 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data 1 Rev. 02 — 05 July 2001 7 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 03ad53 03ad55 50 10 IS VGS VGS = 0 V (A) 40 ID = 10 A (V) 8 VDD = 15 V Tj = 25 ºC 30 6 20 4 10 2 150 ºC Tj = 25 ºC 0 0 0 0.4 0.8 1.2 VSD (V) 1.6 0 Tj = 25 °C and 150 °C; VGS = 0 V 20 30 QG (nC) 40 ID = 10 A; VDD = 15 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data 10 Rev. 02 — 05 July 2001 8 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ o 8 0o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 Fig 15. SOT96-1 (SO8). © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 9 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date CPCN Description 02 20010705 - Correction to IDM condition 01 20010220 - Product specification; initial version © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 10 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status [1] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2001 All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 11 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. 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All rights reserved. 9397 750 08048 Product data Rev. 02 — 05 July 2001 12 of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 05 July 2001 Document order number: 9397 750 08048