BGY288 Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 Rev. 01 — 2 February 2005 Preliminary data sheet 1. Product profile 1.1 General description The BGY288 is a power amplifier module in a SOT775 surface mounted package with a plastic cap. In the module, a mix of state of the art technologies as InGaP, Si-Bicmos and Si passive integration are used to combine high performance with a small size. The module comprises two functional sections, one for low-band (GSM850/EGSM900) and one for high-band (DCS1800/PCS1900) with internal power detection, power control loop, input and output matching; see Figure 2. The power control circuit ensures a stable RF power output which is set by the voltage level on pin PC. The power control circuit is stabilized to compensate for variations in supply voltage, input power and temperature, and has a control range fully compliant with European Telecommunication Standards Institute (ETSI) time mask and power spectrum requirements. 1.2 Features 1.2.1 General features ■ Quad band GSM amplifier ■ 34 dBm controlled output power for GSM850/EGSM900 ■ Suited for GPRS class 12 (duty cycle δ = 4 : 8) ■ Integrated power control loop ■ 3.6 V nominal supply voltage ■ Very small size (8 mm × 8 mm) ■ 32.5 dBm controlled output power for DCS1800/PCS1900 ■ Easy on/off and band select by digital control voltage ■ Internal input and output matching ■ Specification based on 3GPP TS 45.005 1.2.2 RF performance RF performance with a typical pulsed, controlled output power at Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V; ZS = ZL = 50 Ω; PD(LB) = 2 dBm / PD(HB) = 0 dBm; δ = 2 : 8. ■ f = 824 MHz to 849 MHz; η @ PSAT = 50 %; PL = 34 dBm ■ f = 880 MHz to 915 MHz; η @ PSAT = 55 %; PL = 34 dBm ■ f = 1710 MHz to 1785 MHz; η @ PSAT = 50 %; PL = 32.5 dBm ■ f = 1850 MHz to 1910 MHz; η @ PSAT = 50 %; PL = 32.5 dBm 1.3 Applications ■ Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in four frequency bands: 824 MHz to 849 MHz, 880 MHz to 915 MHz, 1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz. BGY288 Philips Semiconductors Power amplifier with integrated control loop 2. Pinning information RFO_HB GND RFO_LB 2.1 Pinning 16 15 14 12 VBAT VBAT 3 11 VBAT RFI_HB 4 10 RFI_LB TXON 5 6 7 8 BAND 2 VBAT VSTAB GND 1 PC 13 GND n.c. 9 001aac028 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 1: Pin description Symbol Pin Type Description GND 1, 13, 15 ground ground 2, 3 supply battery supply voltage for DCS1800/PCS1900 section 11, 12 supply battery supply voltage for GSM850/EGSM900 section RFI_HB 4 analog input DCS1800/PCS1900 transmit RF input TXON 5 logic input RF power control enable input PC 6 analog input RF power control input VSTAB 7 supply stabilized supply voltage BAND 8 logic input Low-Band (LB) (GSM850/EGSM900) or High-Band (HB) (DCS1800/PCS1900) select input n.c. 9 RFI_LB 10 VBAT [1] not connected analog input GSM850/EGSM900 transmit RF input RFO_LB 14 analog output GSM850/EGSM900 transmit RF output RFO_HB 16 analog output DCS1800/PCS1900 transmit RF output inner pads ground ground [1] Pins 2, 3, 11 and 12 (VBAT) are not internally connected and must all be connected to the battery supply voltage. 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 2 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 3. Ordering information Table 2: Ordering information Type number BGY288 Package Name Description Version - leadless surface mounted package; plastic cap; 16 terminations SOT775A 4. Block diagram 850 MHz and 900 MHz POWER AMPLIFIER RFI_LB 10 OUTPUT MATCHING BIASING 14 RFO_LB POWER SENSE POWER CONTROLLER PC VSTAB TXON 6 7 5 BGY288 LOGIC CONTROL (1) (1) BAND 8 BIASING RFI_HB POWER SENSE 4 OUTPUT MATCHING 16 RFO_HB 1800 MHz and 1900 MHz POWER AMPLIFIER 001aab846 (1) Pull-down resistor. Fig 2. Block diagram 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 3 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 5. Functional description 5.1 Operating conditions The BGY288 is designed to meet the 3GPP TS 45.005 technical specification for the ETSI. 5.2 Power amplifier The low band (GSM850 and EGSM900) and the high band (DCS1800 and PCS1900) channel power amplifiers each comprises three cascaded gain stages, input and output matching and harmonic filters. The output power of each amplifier is determined by the bias on each of its 3 gain stages and is controlled by an internal signal generated in the power controller block. Each power amplifier block generates a power sense signal which is routed internally to the power control block. 5.3 Control logic The control logic block generates the various signals to control the complete BGY288 depending on the signal levels on pins TXON and BAND, as indicated in Table 3. The control logic block supply voltage is via pin VSTAB. When pin VSTAB = 0 V, the BGY288 is in Idle mode and the battery current consumption is almost zero. The power control block is enabled when pin TXON goes HIGH. The low band (GSM850/EGSM900) channel is enabled when pin BAND goes LOW and the high band (DCS1800/PCS1900) channel is enabled when pin BAND goes HIGH. Both TXON and BAND inputs have pull-down resistors of approximately 1 MΩ. 5.4 Power controller The main inputs to the power controller block are the RF power control signal via pin PC and the output power sense signal internally generated by each power amplifier block. The PC signal is the reference voltage for the requested level of output power, and is usually generated by an external digital-to-analog converter. The PC signal is buffered and compared with the output power sense signal. The resultant error signal is then amplified by one of two integrators, the selection of which being dependant on the level of the BAND signal. The output of the selected integrator is the internal signal which controls the biasing circuits of the selected channel. 5.5 Mode control Table 3: Mode control Mode Mode description Idle power amplifier fully off; minimal leakage current 0 TXON BAND PC (V) LOW LOW < 0.15 Standby control logic functioning; power amplifier off 2.6 to 3 LOW HIGH or LOW < 0.15 LB TX low-band transmit mode (GSM850/EGSM900) 2.6 to 3 HIGH LOW < 2.5 HB TX high-band transmit mode (DCS1800/PCS1900) 2.6 to 3 HIGH HIGH < 2.5 9397 750 14011 Preliminary data sheet VSTAB (V) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 4 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 6. Timing dB PL(LB), PL(HB) +4 +1 −1 −6 (**) −30 (***) (147 bits) (*) 10 µs 8 µs 10 µs 7056/13 (542.8) µs 10 µs 8 µs 10 µs t VSTAB td6 td1 TXON td5 td4 BAND td2 td7 PD(LB), PD(HB) td3 td8 PC 001aab847 td9 Fig 3. Timing diagram Table 4: Timing characteristics ZS = ZL = 50 Ω; PD(LB) = 0 dBm to 4 dBm / PD(HB) = −2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V; VSTAB = 2.6 V to 3.0 V; Tmb = −20 °C to 85 °C; δ = 1 : 8 to 4 : 8; unless otherwise specified. Symbol Parameter Min Typ Max Unit 0 - - µs td2 delay time; BAND to LOW or HIGH before TXON goes HIGH 0 - - µs td3 delay time; RF signal on RFI_HB or RFI_LB before PC ramp-up 0 - - µs td4 delay time; PC start of ramp-up after TXON goes HIGH 10 - - µs td5 delay time; TXON to LOW after transition of PC to off condition 0 - - µs td1 delay time; VSTAB to high voltage before TXON goes HIGH td6 delay time; VSTAB to 0 V, after TXON goes LOW 10 - - µs td7 delay time; change of BAND after TXON goes LOW 0 - - µs td8 delay time; removal of RF signal on RFI_HB or RFI_LB after transition of PC to off condition 0 - - µs td9 time between PC ramp-up and actual PL increase - - 3 µs 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 5 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 6.1 Ramp-up VSTAB voltage must be available at minimum td1 before TXON goes HIGH (power control loop activates). BAND selects the correct transmit channel (GSM850/EGSM900, or DCS1800/PCS1900). BAND must be at the correct value before the rising edge of TXON. The transition of TXON to HIGH enables the power control loop; the TXON minimum td4 period is a set-up time which allows the correct internal biasing conditions and the charge on the integration capacitors to be at the correct starting value before PC starts to increase. RF power must be present at the input of the selected channel (PD(LB) or PD(HB)) before PC starts to ramp-up. The required RF output power level is reached by increasing PC in steps to the corresponding voltage level. The sequence of PC steps can be chosen to have approximately a quarter cosine wave ramp-up of PL(LB) or PL(HB) in order to prevent violation of the GSM power mask, and at the same time prevent violation of the spectrum due to transients. To avoid violation of the lowest power level in the GSM power mask (indicated by *; see Figure 3), the BGY288 provides sufficient isolation when TXON goes HIGH with PC at minimum value and RF power at input of power amplifier. In LB TX mode, the system specification for maximum output power of the handset is −36 dBm. In HB TX mode, the system specification for maximum output power of the handset is −48 dBm. In BGY288 transmit mode, the handset antenna switch can be used to provide isolation between the power amplifier and the antenna by setting the antenna switch to Rx mode. This condition is used for the transmit mode isolation parameters given in Section 9. 6.2 Ramp-down PC steps down from the voltage level for the current power level to off state. The sequence of PC steps can be chosen to have approximately a quarter cosine wave ramp-down of PL(LB) or PL(HB) in order to prevent violation of the GSM power mask, and at the same time prevent violation of the spectrum due to transients. The power control loop can be switched off (TXON goes LOW) as soon as PC has reached the off state level. At the same time, BAND is allowed to change polarity and the RF input power at the selected channel (PD(LB) or PD(HB)) can be removed. When input power is removed, there is no additional isolation specification required to meet the GSM system specification. In LB TX mode, the system specification for maximum output power of the handset is −54 dBm. In HB TX mode the system specification for maximum output power is −48 dBm. At minimum td6 after TXON goes LOW (power control loop deactivates) and when all charge in the power control loop capacitors is removed, the BGY288 can go into Idle mode (VSTAB = 0 V). 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 6 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 7. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VBAT DC supply voltage Idle mode - 7 V - 5.3 V VSTAB stabilized DC supply voltage −0.5 +3.3 V ISTAB stabilized supply current - 2 mA VPC DC output power control voltage - 3 V HB TX or LB TX mode IPC current into output power control input −2 +2 mA PD(HB), PD(LB) input drive power on RFI_HB or RFI_LB - 10 dBm PL(LB) load power on RFO_LB - 37 dBm PL(HB) load power on RFO_HB - 35 dBm VBAND band switch voltage −0.5 +3.3 V IBAND band switch current −2 +2 mA VTXON transmit control signal −0.5 +3.3 V ITXON current into transmit control input −2 +2 mA PBAT power from supply during pulse current from supply during pulse IBAT Tstg storage temperature Tmb mounting base temperature HB TX mode - 4 W LB TX mode - 7 W HB TX mode - 1.6 A LB TX mode - 2.2 A −40 +100 °C −30 +100 °C δ=2:8 δ=4:8 electrostatic discharge voltage Vesd [1] Class 1B according to EIA/JESD22-A114B [2] Class A according to EIA/JESD22-A115A −30 +90 °C human body model [1] - ±500 V machine model [2] - ±50 V 8. Static characteristics Table 6: Static characteristics ZS = ZL = 50 Ω; PD(HB), PD(LB) = 0 mW; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2.9 - 3.1 V 3.1 3.6 4.6 V 4.6 - 5.2 V Voltage supply VBAT [1] battery supply voltage typical operating range [2] IBAT VSTAB leakage current supply voltage Standby mode - - 1.5 mA Idle mode - - 10 µA Standby, HB TX or LB TX mode 2.6 2.8 3.0 V Idle mode 0 - 0.2 V 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 7 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop Table 6: Static characteristics …continued ZS = ZL = 50 Ω; PD(HB), PD(LB) = 0 mW; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ISTAB current consumption HB TX or LB TX mode - - 1 mA Standby mode - - 1 mA Digital inputs: TXON, BAND [3] VIL LOW-level input voltage 0 - 0.5 V VIH HIGH-level input voltage 1.4 - 3 V IIL LOW-level input current - - 3 µA IIH HIGH-level input current - - 15 µA Ci input capacitance - 4 - pF - 2.5 V Analog inputs: PC [3] VPC power control voltage 0 IPC power control current −100 - - µA CPC PC input capacitance - 4 - pF RPC PC input resistance - 1.2 - MΩ [1] Power amplifier is functional from 2.9 V to 3.1 V, but will not meet all electrical specification points. [2] Power amplifier is functional from 4.6 V to 5.2 V under 50 Ω conditions, but will not meet all electrical specification points. [3] PD(LB) = 0 dBm to 4 dBm / PD(HB) = −2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V; VSTAB = 2.6 V to 3.0 V; Tmb = −20 °C to +85 °C; δ = 1 : 8 to 4 : 8; unless otherwise specified. 9. Dynamic characteristics Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(LB) = 2 dBm; spurious signals on PD(LB) < −50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol Parameter PD(LB) RF input power VPC reference voltage to set output power Conditions Min 0 2 4 dBm f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850; PL(LB) = 35 dBm - - 2 V f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850; PL(LB) = 3 dBm 0.2 - - V 9397 750 14011 Preliminary data sheet Typ Max Unit © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 8 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode …continued ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(LB) = 2 dBm; spurious signals on PD(LB) < −50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(LB) available output power GSM850 VPC = 2.2 V 34.2 35 - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; δ = 2 : 8 32.8 - - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; δ = 2 : 8; Tmb = 85 °C 32.3 - - dBm VPC = 2.2 V 35.2 36 - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; δ = 2 : 8 33.8 - - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; δ = 2 : 8; Tmb = 85 °C 33.3 - - dBm EGSM900 η efficiency GSM850 efficiency EGSM900 saturated power - 50 - % PL(LB) = 34 dBm - 45 - % saturated power - 55 - % PL(LB) = 34 dBm ∆PL(LB) - 50 - % PL(LB) = 31 dBm to 34 dBm for EGSM900 and PL(LB) = 31 dBm to 33 dBm for GSM850; set by PC [1] [2] −0.7 - +0.7 dB PL(LB) = 13 dBm to 31 dBm; set by PC [1] [2] −1.5 - +1.5 dB PL(LB) = 6 dBm to 13 dBm; set by PC [1] [2] −2 - +2 dB PL(LB) = 31 dBm to 34 dBm for EGSM900 and PL(LB) = 31 dBm to 33 dBm for GSM850; set by PC [1] [3] −1.2 - +1.2 dB PL(LB) = 13 dBm to 31 dBm; set by PC [1] [3] −2 - +2 dB PL(LB) = 6 dBm to 13 dBm; set by PC [1] [3] −3 - +3 dB output power variation of frequency PL(LB) = 31 dBm to 34 dBm; set by PC [1] [4] −0.3 - +0.3 dB harmonics PL(LB) ≤ 34 dBm - - −5 dBm isolation H2 into DCS1800/PCS1900 measured at RFO_HB; PL(LB) = 34 dBm - - −15 dBm isolation H3 into DCS1800/PCS1900 measured at RFO_HB; PL(LB) = 34 dBm - - −25 dBm isolation PD(LB) = 4 dBm; VPC = 0.15 V; Standby mode - - −36 dBm PD(LB) = 4 dBm; VPC = 0.15 V; LB TX mode - - −36 dBm PL(LB) < 6 dBm - - 6:1 PL(LB) = 6 dBm to 34 dBm; - 2:1 3:1 output power variation at nominal temperature range output power variation at extreme temperature range H2 to H13 VSWRin input VSWR 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 9 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode …continued ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(LB) = 2 dBm; spurious signals on PD(LB) < −50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol Parameter Conditions Pn noise power RBW = 100 kHz; f0 = 897.5 MHz for EGSM900; f0 = 836.5 MHz for GSM850 f0 + 27.5 MHz; PL(LB) < 34 dBm Min Typ Max Unit - - −73 dBm f0 + 37.5 MHz; PL(LB) < 34 dBm - - −82 dBm f ≥ 1805 MHz; PL(LB) < 34 dBm - - −77 dBm CG conversion gain f0 = 915 MHz for EGSM900; f0 = 849 MHz for GSM850; PL(LB) = 6 dBm to 34 dBm; fSS1 = f0 − 20 MHz; PSS1 = −40 dBm; CG = PL(CON) − PSS1; see Figure 4 - - 28 dB SSG small signal gain f0 = 915 MHz for EGSM900; f0 = 849 MHz for GSM850; PL(LB) = 6 dBm to 34 dBm; fSS2 = f0 + 20 MHz; PSS2 = −40 dBm; SSG = PL(SS2) − PSS2; see Figure 4 - - 31 dB AM/AM AM/AM conversion PL(LB) = 6 dBm to 34 dBm; 6.5 % AM modulation with fmod = 67 kHz at RFI_LB - 5 8 % fmod = 140 kHz at RFI_LB - 8 13 % fmod = 271 kHz at RFI_LB - 14 20 % AM/PM conversion PD(LB) = 1.5 dBm to 2.5 dBm; PL(LB) = 6 dBm to 34 dBm - 2 4 deg/dB maximum control slope PL(LB) = 6 dBm to 34 dBm - - 200 dB/V tr, tf carrier rise and fall time PL(LB) = 5 dBm to 34 dBm or 34 dBm to 5 dBm - - 2 µs fCL control loop bandwidth - 200 - kHz - −36 dBm AM/PM stability PL(LB) ≤ 34 dBm; VSWR ≤ 7 : 1 through all phases; VBAT = 3.2 V to 4.6 V - ruggedness VBAT = 3.2 V to 4.6 V; PL(LB) ≤ 34 dBm; δ = 4 : 8; VSWR ≤ 8 : 1 through all phases no degradation [1] Condition to set VPC: VBAT = 3.6 V; δ = 2 : 8; PD(LB) = 2 dBm; Tmb = 25 °C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850. [2] Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = 15 °C to 70 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV. [3] Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = −20 °C to +90 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV. [4] Conditions for power variation: PD(LB) = 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V ± 20 mV. 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 10 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop Table 8: Dynamic characteristics DCS1800/PCS1900 transmit mode ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(HB) = 0 dBm; spurious signals on PD(HB) < −50 dBm; HB TX mode selected; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified. Symbol Parameter PD(HB) RF input power VPC reference voltage to set output power PL(HB) η available output power efficiency DCS1800 efficiency PCS1900 ∆PL(HB) VSWRin Min Typ Max Unit −2 0 +2 dBm f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900; PL(HB) = 32.5 dBm - - 2 V f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900; PL(HB) = −3 dBm 0.2 - - V VPC = 2.2 V 32.7 33.5 - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(HB) = −2 dBm; δ = 2 : 8 31.8 - - dBm VPC = 2.0 V; VBAT = 3.2 V; PD(HB) = −2 dBm; δ = 2 : 8; Tmb = 85 °C 31.3 - - dBm saturated power - 50 - % PL(HB) = 31.3 dBm - 45 - % saturated power - 50 - % PL(HB) = 31.3 dBm - 45 - % PL(HB) = 28 dBm to 32 dBm; set by PC [1] [2] −0.7 - +0.7 dB PL(HB) = 15 dBm to 28 dBm; set by PC [1] [2] −1 - +1 dB PL(HB) = 5 dBm to 15 dBm; set by PC [1] [2] −2 - +2 dB PL(HB) = 0 dBm to 5 dBm; set by PC [1] [2] −3 - +3 dB PL(HB) = 28 dBm to 32 dBm; set by PC [1] [3] −1.2 - +1.2 dB PL(HB) = 15 dBm to 28 dBm; set by PC [1] [3] −1.5 - +1.5 dB PL(HB) = 5 dBm to 15 dBm; set by PC [1] [3] −2.5 - +2.5 dB PL(HB) = 0 dBm to 5 dBm; set by PC [1] [3] −3.5 - +3.5 dB output power variation of frequency PL(HB) = 30 dBm to 32 dBm; set by PC [1] [4] −0.3 - +0.3 dB harmonics PL(HB) ≤ 32 dBm - - −5 dBm isolation PD(HB) = 2 dBm; VPC = 0.15 V; Standby mode - - −36 dBm PD(HB) = 2 dBm; VPC = 0.15 V; HB TX mode - - −36 dBm PL(HB) < 0 dBm - - 6:1 PL(LB) = 2 dBm to 32 dBm - 2:1 3:1 output power variation at nominal temperature range output power variation at extreme temperature range H2 to H7 Conditions input VSWR Pn noise power f0 = 1785 MHz for DCS1800; f0 = 1910 MHz for PCS1900; f0 + 20 MHz; RBW = 100 kHz; PL(HB) < 32 dBm - - −77 dBm CG conversion gain f0 = 1785 MHz for DCS1800; f0 = 1 910 MHz for PCS1900; PL(HB) = 0 dBm to 32 dBm; fSS1 = f0 − 20 MHz; PSS1 = −40 dBm; CG = PL(CON) − PSS1; see Figure 4 - - 25 dB 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 11 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop Table 8: Dynamic characteristics DCS1800/PCS1900 transmit mode …continued ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(HB) = 0 dBm; spurious signals on PD(HB) < −50 dBm; HB TX mode selected; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit SSG small signal gain f0 = 1785 MHz for DCS1800; f0 = 1 910 MHz for PCS1900; PL(HB) = 0 dBm to 32 dBm; fSS2 = f0 + 20 MHz; PSS2 = −40 dBm; SSG = PL(SS2) − PSS2; see Figure 4 - - 33 dB AM/AM AM/AM conversion PL(HB) = 0 dBm to 32 dBm; 6.5 % AM modulation with fmod = 67 kHz at RFI_HB - 5 8 % fmod = 140 kHz at RFI_HB - 8 13 % fmod = 271 kHz at RFI_HB - 14 20 % AM/PM AM/PM conversion PD(HB) = −0.5 dBm to +0.5 dBm; PL(HB) = 0 dBm to 32 dBm - 2 4 deg/dB maximum control slope PL(HB) = 0 dBm to 32 dBm - - 200 dB/V tr, tf carrier rise and fall time PL(HB) from 0 dBm to 32 dBm and from 32 dBm to 0 dBm - - 2 µs fCL control loop bandwidth - 200 - kHz - −36 dBm stability PL(HB) ≤ 32 dBm; VSWR ≤ 7 : 1 through all phases; VBAT = 3.2 V to 4.6 V - ruggedness VBAT = 3.2 V to 4.6 V; PL(HB) ≤ 32 dBm; δ = 4 : 8; VSWR ≤ 8 : 1 through all phases no degradation [1] Condition to set VPC: VBAT = 3.6 V; δ = 2 : 8; PD(HB) = 0 dBm; Tmb = 25 °C; f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900. [2] Conditions for power variation: PD(HB) = −2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = 15 °C to 70 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV. [3] Conditions for power variation: PD(HB) = −2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = −20 °C to +90 °C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V ± 20 mV. [4] Conditions for power variation: PD(HB) = 0 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = 25 °C; VBAT = 3.6 V; VSTAB = 2.8 V ± 20 mV. 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 12 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop P PL P PD POWER AMP PL(SS1) PL(CON) PSS1 fSS1 f0 fSS1 f f0 2f0 − fSS1 CG = PL(CON) − PSS1 f 001aaa701 a. Conversion gain (CG) P P PD PL POWER AMP PL(SS2) PSS2 f0 fSS2 f SSG = PL(SS2) − PSS2 f0 fSS2 f 001aaa702 b. Small signal gain (SSG) The total noise at the output of the power amplifier is the summation of three sources: The noise present at the input of the power amplifier at fSS1 amplified by the conversion gain. The noise present at the input of the power amplifier at fSS2 amplified by the small signal gain. The noise generated by the power amplifier itself, when the noise at the input of the power amplifier is zero. Fig 4. Input and output signals 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 13 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 10. Application information VBAT C10 C2 C3 C4 C5 L1 RFI_HB 4 R1 2 3 1 5 TXON L3 RFO_HB 16 R2 6 PC 15 C1 BGY288 L4 R3 RFO_LB 14 7 VSTAB R4 BAND 13 8 9 10 12 11 001aab848 L2 RFI_LB C6 C7 C8 C9 C11 VBAT Drive signals must not be applied to pin 9. Components listed in Table 9. Fig 5. Test circuit 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 14 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop VBAT C10 CON1 RFI_HB C2 C3 C4 C5 RFO_HB BGY288 R1 R2 CON3 C1 CON5 R3 R4 R5 CON2 RFI_LB C6 C7 C8 C9 CON4 RFO_LB C11 VBAT 001aab849 CON6 Components listed in Table 9. Fig 6. Printed-circuit board test circuit Table 9: List of components Component Description Value Dimensions PCB printed-circuit board PB005H1 Roland Haefele CON1, CON2, CON3, CON4 jack assembly end launch SMA connector 142-0701-881 Johnson Components CON5 DC connector 5 pin CON6 solder ring C1 SMD capacitor 2.7 nF 0603 size C2, C3, C8, C9 SMD capacitor 100 nF 0805 size C4, C5 SMD capacitor 10 pF 0603 size C6, C7 SMD capacitor 33 pF 0603 size C10, C11 electrolytic capacitor [1] 47 µF; 35 V R1, R3, R4, R5 SMD resistor 0Ω 0605 size R2 SMD resistor 1 kΩ; 0.1 W 0603 size L1, L2, L3, L4 stripline [2] Z0 = 50 Ω width 1.4 mm Matsushita [1] C10 and C11 smooth the DC supply voltage (VBAT). [2] The striplines are on a double etched printed-circuit board (εr = 4.6); thickness 0.8 mm. 9397 750 14011 Preliminary data sheet Supplier © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 15 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 11. Package outline Leadless surface mounted package; plastic cap; 16 terminations ZD2 (10×) 1 ZD1 (10×) e1 (12×) e (2×) e2 (2×) 2 3 SOT775A Z (8×) Z3 4 5 ZE1 (10×) ZE2 (10×) 16 6 15 7 14 8 Z4 Z2 L (16×) Z6 (36×) 13 12 11 10 9 b1 (2×) b (14×) Z5 (36×) Z1 D Dimensions solder resist D1 A y c E1 E pin 1 index 0 5 10 mm scale Z5 Z6 ZD1 ZD2 ZE1 ZE2 0.6 0.6 0.3 0.6 0.3 0.6 DIMENSIONS (mm are the original dimensions) UNIT A max. b b1 c D D1 E E1 e e1 e2 L y max. Z Z1 Z2 Z3 Z4 mm 1.6 0.6 0.9 0.56 8.2 7.8 7.95 7.65 8.2 7.8 7.95 7.65 1.55 1.7 1.85 0.6 0.1 0.9 1 1.2 1.7 1.6 Note 1. General tolerance ±0.050 mm, unless specified otherwise. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-10-10 SOT775A Fig 7. Package outline SOT775A 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 16 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 12. Soldering Recommendations 12.1 Reflow profile The BGY288 is a laminate-based power amplifier module in a Leadless Grid Array (LGA) package. The module can be assembled using a standard Surface Mount Technology (SMT) reflow process in a convection or IR-oven. The minimum and maximum limits of the temperature profile are shown in Figure 8. The actual profile has to be within these limits, and will depend on the printed-circuit board material, the number and size of the components to be assembled, and the type of solder which is being used. temperature TP TR TE(max) TE(min) α α tE β t tR 001aaa705 Fig 8. Recommended reflow temperature profile It is recommended to use a standard no-clean solder paste like SnPb for profiles having leads containing solder, or SnAgCu for lead-free assembly processes. The parameters and corresponding values for SnPb and SnAgCu solder are given in Table 10. Table 10: Reflow soldering parameters Symbol parameter SnPb Solder SnAgCu solder Unit α temperature gradient ≤3 ≤3 °C/s TE pre-heat (soak) temperature 100 to 150 150 to 200 °C tE pre-heat time 60 to 120 60 to 180 s TR reflow temperature > 183 > 217 °C tR reflow time 60 to 150 60 to 150 s TP maximum peak temperature 240 260 °C β temperature gradient <5 <5 °C/s time 25 °C to peak temperature 6 minutes max. 8 minutes max. 12.2 Printed-circuit board layout The printed-circuit board footprint layout is a copy of the metal pattern on the underside of the LGA package. It is recommended that the printed-circuit board is designed with a large ground plane, and that the solder lands of the ground plane solder mask are defined as shown in Figure 9. 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 17 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 12.3 Stencil design The recommended dimensions of the solder stencil are given in Figure 9 and are based on a stencil thickness of 125 µm. Using a thinner or thicker stencil will require the stencil aperture dimensions to be adjusted. 12.4 Rework If rework is required, it is recommended that a BGA rework station with a programmable top and bottom heater is used. The first step of the rework process is to pre-heat the printed-circuit board with the bottom heater of the rework station. When the board has reached the pre-heat temperature, the top heater can be used to increase the temperature above the melting point of the solder. The component which has to be replaced can be picked up with a vacuum nozzle. Before placing a new component the remaining solder on the board must be removed. Fresh solder can be dispensed, a new component placed, and the board heated as described previously. 12.5 Moisture sensitivity level The BGY288 is tested according to the JEDEC standard JESD 22-A113C. The BGY288 is classified on MSL3 for a lead soldering profile with a peak temperature of 240 °C, and on MSL4 for a lead-free soldering profile with a peak temperature of 260 °C. 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 18 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 7.40 1.10 0.60 0.90 1.10 1.10 0.80 0.60 0.60 0.60 B A 0.60 1.10 C 1.10 0.60 7.40 5.40 1.10 0.30 0.60 1.10 0.30 solder lands 0.60 0.40 solder stencil opening 5.20 DIMENSIONS in mm 0.60 0.90 0.60 0.57 0.85 0.55 0.60 0.57 0.60 0.57 detail A (14×) 0.60 0.55 detail B (2×) detail C (36×) mgx467 Fig 9. Footprint layout and solder stencil design 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 19 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 13. Revision history Table 11: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BGY288_1 20050202 Preliminary data sheet - 9397 750 14011 - 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 20 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 14. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 15. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ICs with GSM or 3G functionality — Purchase of a Philips IC with GSM functionality does not convey an implied license under any patent right on the GSM or 3G Standard. A license for the Philips portfolio of GSM and 3G patents needs to be obtained via Philips Intellectual Property & Standards (www.ip.philips.com), e-mail: [email protected]. 16. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14011 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 21 of 22 BGY288 Philips Semiconductors Power amplifier with integrated control loop 18. Contents 1 1.1 1.2 1.2.1 1.2.2 1.3 2 2.1 2.2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 6.1 6.2 7 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General features . . . . . . . . . . . . . . . . . . . . . . . . 1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Operating conditions. . . . . . . . . . . . . . . . . . . . . 4 Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 4 Control logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Power controller . . . . . . . . . . . . . . . . . . . . . . . . 4 Mode control . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Ramp-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ramp-down . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Soldering Recommendations . . . . . . . . . . . . . 17 Reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . 17 Printed-circuit board layout . . . . . . . . . . . . . . . 17 Stencil design . . . . . . . . . . . . . . . . . . . . . . . . . 18 Rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Moisture sensitivity level . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14011 Published in The Netherlands