Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC751LC4 v01.0514 AMPLIFIERS - LOW NOISE - SMT SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Typical Applications Features The HMC751LC4 is ideal for: Noise Figure: 2.2 dB • Point-to-Point Radios Gain: 25 dB • Point-to-Multi-Point Radios & VSAT OIP3: +25 dBm • Test Equipment and Sensors Single Supply: +4V @ 73 mA • Military 50 Ohm Matched Input/Output RoHS Compliant 4 x 4 mm Package Functional Diagram General Description The HMC751LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC751LC4 provides 25 dB of small signal gain, 2.2 dB of noise figure and output IP3 of +25 dBm. The P1dB output power of +13 dBm also enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC751LC4 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +4V Parameter Min. Frequency Range Gain 22 Gain Variation Over Temperature Max. Min. 24 23 0.025 Typ. Max. GHz 25 dB 0.028 2.8 Units 20 - 27 2.0 dB/ °C Noise Figure 2.2 Input Return Loss 17 15 dB Output Return Loss 16 15 dB 2.6 dB Output Power for 1 dB Compression (P1dB) 13 13 dBm Saturated Output Power (Psat) 15 15 dBm Output Third Order Intercept (IP3) 25 25 dBm Supply Current (Idd)(Vdd = +4V) 1 Typ. 17 - 20 50 73 90 50 73 90 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC751LC4 v01.0514 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz 30 28 28 26 26 24 24 22 20 +25 C +85 C - 40 C 18 22 20 4.5 V 4.0 V 3.5 V 18 16 16 14 14 14 16 18 20 22 24 26 28 30 14 16 18 FREQUENCY (GHz) Input Return Loss vs. Temperature 22 24 26 28 30 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 20 FREQUENCY (GHz) -10 -15 -20 +25 C +85 C - 40 C -25 +25 C +85 C - 40 C -10 -15 -20 AMPLIFIERS - LOW NOISE - SMT Gain vs. Supply Voltage 30 GAIN (dB) GAIN (dB) Gain vs. Temperature -25 -30 -30 14 16 18 20 22 24 26 28 30 14 16 18 FREQUENCY (GHz) 20 22 24 26 28 30 26 28 30 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 10 30 28 26 +25 C +85 C -40 C 6 IP3 (dBm) NOISE FIGURE (dB) 8 4 24 22 20 +25 C +85 C - 40 C 18 2 16 14 0 14 16 18 20 22 24 FREQUENCY (GHz) 26 28 30 14 16 18 20 22 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC751LC4 v01.0514 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz P1dB vs. Supply Voltage 18 16 16 14 14 GAIN (dB) P1dB (dBm) 18 12 10 8 12 10 3.5 V 4.0 V 4.5 V 8 +25 C +85 C - 40 C 6 6 4 4 14 16 18 20 22 24 26 28 30 14 16 18 20 FREQUENCY (GHz) 22 24 26 28 30 28 30 FREQUENCY (GHz) Psat vs. Temperature Reverse Isolation vs. Temperature 18 0 16 -10 14 -20 ISOLATION (dB) Psat (dBm) AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature 12 10 +25 C +85 C - 40 C 8 6 +25 C +85 C - 40 C -30 -40 -50 -60 4 -70 14 16 18 20 22 24 26 28 30 14 16 18 20 FREQUENCY (GHz) 22 24 26 FREQUENCY (GHz) Power Compression @ 21 GHz Pout (dBm), GAIN (dB), PAE (%) 30 25 20 Pout Gain PAE 15 10 5 0 -25 -20 -15 -10 -5 INPUT POWER (dBm) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC751LC4 v01.0514 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +4 Vdc) -5 dBm +3.5 69 Channel Temperature 175 °C +4.0 73 Continuous Pdiss (T= 85 °C) (derate 11.2 mW/°C above 85 °C) 1W +4.5 77 Thermal Resistance (channel to ground paddle) 89 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish HMC751LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H751 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC751LC4 v01.0514 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz AMPLIFIERS - LOW NOISE - SMT Pin Descriptions 5 Pin Number Function Description 1, 3, 5 - 7, 12 - 14, 16, 18, 19, 24 GND These pins and package bottom must be connected to RF/DC ground. 2, 8 - 11, 17, 23 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 15 RFOUT This pin is AC coupled and matched to 50 Ohms. 22, 21, 20 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are required. Interface Schematic Application Circuit Component Value C1, C2, C3 100 pF C4, C5, C6 1,000 pF C7, C8, C9 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC751LC4 v01.0514 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 123815 [1] Item Description J1 - J2 PCB Mount K Connector J3 - J6 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 1,000 pF Capacitor, 0603 Pkg. C7 - C9 2.2 µF Capacitor, Tantalum U1 HMC751LC4 Amplifier PCB [2] 123813 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6