RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Features General Description ■ Quad band, matched module ■ High efficiency- 55% GSM850/900, 50% DCS/PCS ■ Integrated power control function The RMPA1850 power amplifier module (PAM) is designed for GSM/GPRS cellular handset applications. The PAM a fully input and output 50Ω matched. It also includes integrated power control and band select. ■ ■ ■ ■ ■ Compact 7*10*1.6mm module InGaP HBT technology GPRS class 12 capable Ruggedness 10:1 50 dB power control range Functional Block Diagram VCC2 12 DCS/PCS IN 1 BAND SELECT 2 TX EN 3 VBAT 4 VREG 5 VRAMP 6 GSM IN 7 Match Match Power Sensing CMOS Power Controller Match Match 11 DCS/PCS OUT 10 VOUT Power Sensing 9 GSM OUT 8 VCC2 ©2004 Fairchild Semiconductor Corporation RMPA1850 Rev. A1 1 www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module December 2004 Specification Parameter Frequency Output Power Min. Max. Unit Condition 824 Typ. 849 MHz GSM850 band 880 915 MHz GSM900 band 34 34.5 dBm GSM850 band 34.5 35 dBm GSM900 band Power Added Efficiency 50 55 % @ Pout max Input Power Range 0 3 dBm 2nd Harmonics -10 dBm 3rd Harmonics -15 dBm Forward isolation -30 dBm Cross Isolation -30 dBm Input VSWR Vramp for Max. Pout Vramp for Min. Pout Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo 2.5:1 1.4 1.8 0.3 Power control range V 50 Ruggedness V dB Output VSWR = 10:1, Pout ≤ 34.5 dBm no permanent damage Stability -36 Output Noise Power, 20 MHz offset Vramp = 0.1 to 1.8V dBm Load 8:1 dBm RBW = 100 KHz Max. Unit Condition 1785 MHz DCS band -82 DCS/PCS BAND Specification Parameter Frequency Min. Typ. 1710 1850 MHz PCS band 32.5 33 dBm DCS band 32 32.5 dBm PCS band Power Added Efficiency 45 50 % @ Pout max Input Power Range 0 3 dBm Output Power 1910 2nd Harmonics -15 dBm 3rd Harmonics -10 dBm Forward isolation -30 dBm Cross Isolation -20 dBm Input VSWR 2.5:1 Vramp for Max. Pout Vramp for Min. Pout Power control range Ruggedness 1.4 1.8 0.3 V V 50 dB -36 -82 Vramp = 0.1 to 1.8V Output VSWR = 10:1,Pout ≤ 32.5dBm no permanent damage Stability Noise Power, 20 MHz offset Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo dBm Load 8:1 dBm RBW = 100 KHz, 20 MHz offset 1. VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, TX-EN = high, T = 25°C, 12.5% duty cycle 2 RMPA1850 Rev. A1 www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module GSM850/GSM900 BAND Maximum Units Supply Voltage, VBATT Parameter Minimum +6 V Power Control Voltage +2.5 V Input RF Power +12 dBm Duty Cycle at Max. Power 50 % Storage Temperature -40 +150 °C Operating Temperature -30 +85 °C Recommended Operating Conditions Specification Parameter VBAT Supply Voltage Min. 3.0V VBAT Supply Leakage Current VREG Voltage Unit 3.5V 4.8V 12µA 2.7V 2.8V VREG Current TX_EN Logic Level to Enable Max. 2.9V TX_EN = High 1µA TX_EN = Low 1.9V 0.6V Current into TX_EN Pin Current into Band Select Pin 0.1µA 5µA 0.1µA 5µA 1.9V Band Select Logic Level to enable GSM Band 0.6V Vramp Pin Transconductance 83µA/V 3 RMPA1850 Rev. A1 TX_EN = Low 10mA TX_EN Logic Level to Disable Band Select Logic Level to enable DCS Band Condition (Temp = +25°C, Vcc = 3.5V) www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Absolute Ratings PAE% 34 Pout/dBm 33 32 31 30 824 848 880 PAE% 35 Pout/dBm Pout/dBm 35 36 PAE% 60% 55% 50% 45% 40% 35% 30% 25% 20% 15% 10% 5% 0% 36 34 33 32 Pout/dBm 31 30 1710 914 freq/ MHz 1785 1850 60% 55% 50% 45% 40% 35% 30% 25% 20% 15% 10% 5% 0% PAE% VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, VRAMP = 1.6V, T = 25°C, 25% duty cycle 1910 Freq/MHz Power Control: Pout vs. VRAMP 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 824MHz 848MHz 880MHz 915MHz 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 Vramp / V 1710MHz 1785MHz 1850MHz 1910MHz 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 Vramp / V 4 RMPA1850 Rev. A1 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 Pout / dBm Pout / dBm VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, T = 25°C, 25% duty cycle www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Pout and PAE% vs. Frequency Pin Function 1 DCS/PCS IN 50Ω RF input of DCS/PCS band. Description 2 Band Select Logic high for DCS/PCS and logic low for GSM850/EGSM900 band. 3 TX_EN 4 VBAT Logic high to enable the PA module function. Power supply to the PA module. This should be connected to battery. The decoupling capacitor is required to filter the interference. 5 VREG 6 VRAMP Ramping signal from DAC to control the power level. Normally, 2.8 volts are required at this node for the operation of control circuits. 7 GSM IN 50Ω RF input of GSM850/EGSM900 band. 8 VCC2 Power supply for the driver stage of the GSM850/EGSM900 band. This is internally connected to VBAT node within the module. 9 GSM OUT 10 VOUT 50Ω RF output of GSM850/EGSM900 band. 11 DCS/PCS OUT 12 VCC2 Power supply for the power stages of GSM850/EGSM900 and DCS/PCS band. This is internally connected to VBAT node within the module. 50Ω RF output of DCS/PCS band. Power supply for the driver stage of the GSM850/EGSM900 and DCS/PCS band. This is internally connected to VBAT node within the module. VCC2 DCS/PCS IN 1 BAND SELECT 2 TX EN 3 VBAT 4 VREG 5 VRAMP 6 GSM IN 7 12 11 DCS/PCS OUT 10 VOUT 9 8 GSM OUT VCC2 5 RMPA1850 Rev. A1 www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Signal Descriptions VCC2 12 DCS/PCS IN 50 Ohm Microstrip 1 Match DCS/PCS OUT 11 50 Ohm Microstrip 2 BAND SELE CT 1µF TX EN 3 VBAT 1µF VREG Power Sensing Match 10µF 1µF 1nF CMOS Power Controller 4 10 VOUT 5 6 VRAMP 0 Ohm 2K Ohm 330pF GSM IN 7 Match Power Sensing Match GSM OUT 9 50 Ohm Microstrip 8 50 Ohm Microstrip VCC2 150 Ohm Evaluation Board VBAT GND 47µF 1µF DCS/PCS OUT DCS/PCS IN 1µF 10µF 1µF 330pF 1µF 1nF 150Ohm 1µF 2KOhm GSM IN GSM OUT 0 Ohm 1µF BS 1µF TX EN VREG 6 RMPA1850 Rev. A1 VRAMP www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Evaluation Board Schematic RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Package Outline (All dimensions in mm) RMPA1850 7 mm 10 mm PIN 1 0.1 TOP VIEW 0.6 0.5 0.8 0.1 0.7 1.6 0.1 PIN 1 0.8 0.8 2.4 0.8 0.8 0.7 0.7 0.7 0.7 10 3.0 0.7 0.7 0.7 1.5 0.1 BOTTOM VIEW 0.44 SIDE VIEW 7 RMPA1850 Rev. A1 www.fairchildsemi.com CAUTION: THIS IS AN ESD SENSITIVE DEVICE Precautions to Avoid Permanent Device Damage: Solder Materials & Temperature Profile: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. • Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. – Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150°C. • A properly grounded static-dissipative surface on which to place devices. • Static-dissipative floor or mat. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220°C, with a maximum limit of 225°C. • A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild RF recommends the following procedures prior to assembly. • Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. • Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature • Assemble the dry-baked devices within 7 days of removal from the oven. • Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. Recommended Solder Reflow Profile 240 10 SEC 220 200 183°C 180 160 140 DEG (°C) 120 100 1°C/SEC SOAK AT 150°C FOR 60 SEC 80 45 SEC (MAX) ABOVE 183°C 1°C/SEC 60 40 20 0 0 60 120 180 240 300 TIME (SEC) 8 RMPA1850 Rev. A1 www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module Application Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 9 RMPA1850 Rev. A1 www.fairchildsemi.com RMPA1850 Quad Band GSM/GPRS Power Amplifier Module TRADEMARKS