BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES BFG67; BFG67/X; BFG67/XR PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG67/X BFG67/XR 1 collector collector collector 2 base emitter emitter 3 emitter base base 4 emitter emitter emitter Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. handbook, 2 columns 4 3 1 handbook, 2 columns 3 2 2 Top view 4 1 Top view MSB014 MSB035 MARKING TYPE NUMBER CODE BFG67 (Fig.1) V3% BFG67/X (Fig.1) %MV BFG67/XR (Fig.2) V26 Fig.1 Simplified outline SOT143B. Fig.2 Simplified outline SOT143R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 10 V − 50 mA − 300 mW VCEO collector-emitter voltage IC collector current (DC) Ptot total power dissipation Ts ≤ 65 °C Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz 8 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz 17 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz 1.3 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz 2.2 − dB open base Rev. 05 - 23 November 2007 2 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 380 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Ts ≤ 65 °C; see Fig.3; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. MBC984 - 1 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 T ( o C) s Fig.3 Power derating curve. Rev. 05 - 23 November 2007 3 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current VCB = 5 V; IE = 0 − − 50 hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz − 8 − GHz Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 17 − dB IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V Tamb = 25 °C; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.7 − dB IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω − 2.5 − dB IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω − 3 − dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 05 - 23 November 2007 4 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors MBB301 120 handbook, halfpage BFG67; BFG67/X; BFG67/XR MBB302 handbook,0.8 halfpage Cre (pF) h FE 0.6 80 0.4 40 0.2 0 0 0 20 40 I C (mA) 60 VCE = 5 V. Fig.4 0 4 8 12 VCB (V) 16 IC = ic = 0; f = 1 MHz. DC current gain as a function of collector current. Fig.5 Feedback capacitance as a function of collector-base voltage. MBB303 10 MBB304 handbook,25 halfpage handbook, halfpage fT (GHz) 8 gain (dB) 20 6 15 4 10 2 5 MSG G max G UM 0 0 0 10 20 30 40 0 10 20 I C (mA) IC (mA) 40 VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V; Tamb = 25 °; f = 2 GHz. Fig.6 30 Transition frequency as a function of collector current. Fig.7 Gain as a function of collector current. Rev. 05 - 23 November 2007 5 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB305 50 MBB306 50 gain handbook, halfpage handbook, halfpage gain (dB) (dB) 40 40 G UM 30 G UM 30 MSG MSG 20 20 G max G max 10 10 0 10 10 2 10 3 f (MHz) 10 0 4 VCE = 8 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 10 10 2 10 3 4 VCE = 8 V; IC = 15 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. MBB307 handbook,50 halfpage MBB308 4 handbook, halfpage gain f = 2 GHz F (dB) (dB) 40 10 f (MHz) G UM 3 1 GHz 900 MHz 30 MSG 500 MHz 2 20 G max 1 10 0 10 10 2 10 3 f (MHz) 10 VCE = 8 V; IC = 30 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 4 0 1 10 I C (mA) 100 VCE = 8 V. Fig.10 Gain as a function of frequency. Fig.11 Minimum noise figure as a function of collector current. Rev. 05 - 23 November 2007 6 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB309 4 handbook, halfpage F (dB) I C = 30 mA 3 15 mA 5 mA 2 1 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. Fig.12 Minimum noise figure as a function of frequency. BFG67/X VCE (V) on IC (mA) 8 stability circle re gi 1 le 5 un 500 st ab f (MHz) 0.5 2 Noise Parameters Fmin (dB) 0.95 Gamma (opt) (mag) 0.455 (ang) 33.8 0.2 0.288 5 Fmin=0.95 dB Rn/50 10 OPT +j 0 0.2 0.5 −j 1 2 5 10 ∞ 1.5 dB 10 2 dB 3 dB 0.2 5 2 0.5 1 MBB317 ZO = 50 Ω. Fig.13 Noise circle figure. Rev. 05 - 23 November 2007 7 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR BFG67/X f (MHz) 8 1.3 Gamma (opt) (mag) 2 Fmin =1.3 dB 0.2 (ang) 0.375 1 0.5 5 Noise Parameters Fmin (dB) stability circle IC (mA) un s reg table ion 1000 VCE (V) 65.9 Rn/50 0.304 5 OPT 10 +j 0.2 0 0.5 1 −j 2 5 ∞ 10 2 dB 10 5 3 dB 0.2 4 dB 2 0.5 MBB316 1 ZO = 50 Ω. Fig.14 Noise circle figure. BFG67/X f (MHz) 2000 VCE (V) 8 1 IC (mA) 0.5 2 5 Noise Parameters Fmin (dB) 2.2 0.2 Gamma (opt) (mag) (ang) 0.391 136.5 3 dB OPT 0.184 12 5 dB 10 0.5 1 2 5 ∞ 10 G max =12dB Gamma (max) 0.839 0.2 0 –j (mag) 4 dB +j Average Gain Parameters GMAX (dB) 5 Fmin =2.2 dB Rn/50 11 dB 10 10 dB 9 dB 5 0.2 8 dB (ang) −170 2 0.5 1 MBB315 ZO = 50 Ω. Fig.15 Noise circle figure. Rev. 05 - 23 November 2007 8 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 −j 10 40 MHz 5 0.2 2 0.5 MBB314 1 VCE = 8 V; IC = 15 mA; ZO = 50 Ω. Fig.16 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 150° 30° 40 MHz +ϕ 180° 50 40 30 20 3 GHz 10 0° −ϕ 30° 150° 120° VCE = 8 V; IC = mA; ZO = 50 Ω. 60° 90° MBB313 Fig.17 Common emitter forward transmission coefficient (S21). Rev. 05 - 23 November 2007 9 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 40 MHz −j 10 3 GHz 5 0.2 2 0.5 MBB312 1 VCE = 8 V; IC = 15 mA. Fig.18 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 120° 60° 3 GHz 150° 180° 0.5 0.4 0.3 0.2 30° +ϕ 40 MHz 0.1 0° −ϕ 30° 150° 60° 120° 90° MBB311 VCE = 8 V; IC = 15 mA. Fig.19 Common emitter output reflection coefficient (S22). Rev. 05 - 23 November 2007 10 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 05 - 23 November 2007 11 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-10 SOT143R Rev. 05 - 23 November 2007 12 of 14 BFG67; BFG67/X; BFG67/XR NXP Semiconductors NPN 8 GHz wideband transistors Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 05 - 23 November 2007 13 of 14 BFG67; BFG67/X; BFG67/XR NXP Semiconductors NPN 8 GHz wideband transistors Revision history Table 1. Revision history Document ID Release date Data sheet status Change notice Supersedes BFG67_X_XR_N_5 20071123 Product data sheet - BFG67_X_XR_4 • Modifications: Page 2; Table Marking code; row 1 and 2 code changed BFG67_X_XR_4 (9397 750 04349) 19981002 Product specification - BFG67_SERIES_3 BFG67_SERIES_3 19950901 Product specification - BFG67_SERIES_2 BFG67_SERIES_2 - Product specification - BFG67_SERIES_1 BFG67_SERIES_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 November 2007 Document identifier: BFG67_X_XR_N_5