BFG25A/X NPN 5 GHz wideband transistor Rev. 04 — 27 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION • Low current consumption (100 µA to 1 mA) • Low noise figure NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). • Gold metallization ensures excellent reliability. PINNING PIN APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. handbook, 2 columns 4 1 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 3 2 Top view MSB014 Marking code: %MU. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 8 V VCEO collector-emitter voltage − − 5 V IC collector current (DC) − − 6.5 mA Ptot total power dissipation Ts ≤ 165 °C − − 32 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5 5 − GHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 18 − dB F noise figure IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 1.8 − dB IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 2 − dB Rev. 04 - 27 November 2007 2 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8 V VCEO collector-emitter voltage open base − 5 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 6.5 mA Ptot total power dissipation Ts ≤ 165 °C; note 1 − 32 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 320 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 5 V − − 50 hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 Cre feedback capacitance IC = ic = 0; VCB = 1 V; f = 1 MHz − 0.21 0.3 pF fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain (note 1) IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 18 − dB F noise figure IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 1.8 − dB IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C − 2 − dB Note µA 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2 2 1 1 – S – S 11 22 Rev. 04 - 27 November 2007 3 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor MRC038 - 1 handbook,40 halfpage BFG25A/X MCD138 100 handbook, halfpage h FE P tot (mW) 80 30 60 20 40 10 20 0 10 3 0 0 50 100 150 Ts (oC) 200 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.3 Fig.2 Power derating curve. MCD139 handbook,0.3 halfpage DC current gain as a function of collector current; typical values. MCD140 6 handbook, halfpage fT (GHz) C re (pF) 0.2 4 0.1 2 0 0 0 2 4 VCB (V) 6 1 2 3 I C (mA) 4 VCE = 1 V; f = 500 MHz; Tamb = 25 °C. IC = ic = 0; f = 1 MHz. Fig.4 0 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Rev. 04 - 27 November 2007 Transition frequency as a function of collector current; typical values. 4 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor MCD141 30 handbook, halfpage MCD142 handbook,20 halfpage gain G UM gain BFG25A/X G UM (dB) (dB) 15 20 MSG MSG 10 10 5 0 0 0.5 0 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.6 0 0.5 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Gain as a function of collector current; typical values. MCD143 handbook,50 halfpage gain Fig.7 Gain as a function of collector current; typical values. MCD144 handbook,50 halfpage gain (dB) (dB) 40 40 G UM 30 30 20 20 G UM MSG MSG 10 10 0 10 10 2 10 3 f (MHz) 10 4 IC = 0.5 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.8 0 10 10 2 10 3 f (MHz) 10 4 IC = 1 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Gain as a function of frequency; typical values. Fig.9 Rev. 04 - 27 November 2007 Gain as a function of frequency; typical values. 5 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MCD145 4 MCD146 4 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 3 IC = 2 mA 3 1 GHz 1 mA 500 MHz 2 2 1 1 0 10−1 1 IC (mA) 0.5 mA 0 102 10 VCE = 1 V. 103 f (MHz) 104 VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 6 dB n unstable regio 0.2 4 dB 2.5 dB + j 0 0.2 0.5 1 2 5 10 10 * ∞ MSG 15.6 dB –j 0.2 stability circle 5 OPT F = 1.9 dB min 10 5 14 dB 12 dB 2 0.5 1 MCD147 IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4. Fig.12 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 6 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 stability circle 6 dB 0.2 n egio ble r a unst 4 dB OPT F min = 2 dB 5 3 dB + j 10 * 0 0.2 0.5 1 MSG 12.4 dB –j 2 5 10 ∞ 10 11 dB 5 0.2 9 dB 2 0.5 1 MCD148 IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6. Fig.13 Common emitter noise figure circles; typical values. 1 stability circle handbook, full pagewidth 0.5 2 ion eg er bl sta 6 dB un OPT F = 2.4 dB min 4 dB 0.2 3 dB * 5 10 +j 0 0.2 MSG 0.5 9 dB 1 2 5 10 ∞ –j 10 7.5 dB 0.2 5 6 dB 2 0.5 1 MCD149 IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9. Fig.14 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 7 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 ∞ 40 MHz –j 10 3 GHz 5 0.2 2 0.5 MCD150 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 45 o 135 o 3 GHz 180 o 40 MHz _ IC = 1 mA; VCE = 1 V. 1 2 3 4 5 0o _ 45 o 135 o _ 90 o MCD151 Fig.16 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 27 November 2007 8 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 90 o handbook, full pagewidth 45 o 135 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz _ 45 o _ 135 o _ 90 o IC = 1 mA; VCE = 1 V. MCD153 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ 40 MHz –j 10 5 0.2 3 GHz 2 0.5 1 MCD152 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 27 November 2007 9 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 04 - 27 November 2007 10 of 12 BFG25A/X NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 27 November 2007 11 of 12 BFG25A/X NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG25AX_N_4 20071127 Product data sheet - BFG25AX_3 Modifications: • Fig. 1 on page 2; Figure note changed BFG25AX_3 (9397 750 02767) 19971029 Product specification - BFG25AX_2 BFG25AX_2 19950901 Product specification - BFG25AX_1 BFG25AX_1 19921101 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 November 2007 Document identifier: BFG25AX_N_4