PHILIPS BFG67/X

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
FEATURES
BFG67; BFG67/X; BFG67/XR
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG67
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
BFG67/X
BFG67/XR
1
collector
collector
collector
2
base
emitter
emitter
3
emitter
base
base
4
emitter
emitter
emitter
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
handbook, 2 columns
4
3
1
handbook, 2 columns
3
2
2
Top view
4
1
Top view
MSB014
MSB035
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3
BFG67/X (Fig.1)
V12
BFG67/XR (Fig.2)
V26
Fig.1
Simplified outline
SOT143B.
Fig.2
Simplified outline
SOT143R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
10
V
−
50
mA
−
300
mW
VCEO
collector-emitter voltage
IC
collector current (DC)
Ptot
total power dissipation
Ts ≤ 65 °C
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
0.5
−
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
8
−
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.3
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
2.2
−
dB
1998 Oct 02
open base
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
50
mA
Ptot
total power dissipation
−
380
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 65 °C; see Fig.3; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBC984 - 1
400
handbook,
halfpage
Ptot
(mW)
300
200
100
0
0
50
100
150
200
T ( o C)
s
Fig.3 Power derating curve.
1998 Oct 02
3
VALUE
UNIT
290
K/W
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCB = 5 V; IE = 0
−
DC current gain
IC = 15 mA; VCE = 5 V
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
Cc
collector capacitance
ICBO
collector leakage current
hFE
fT
TYP.
MAX.
UNIT
−
50
60
100
−
−
8
−
GHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.7
−
pF
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1.3
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.5
−
pF
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
17
−
dB
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V
Tamb = 25 °C; f = 1 GHz
−
1.3
−
dB
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
−
2.5
−
dB
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
−
3
−
dB
F
noise figure
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB302
MBB301
handbook,0.8
halfpage
120
handbook, halfpage
Cre
(pF)
h FE
0.6
80
0.4
40
0.2
0
0
0
20
40
I C (mA)
60
VCE = 5 V.
Fig.4
0
4
8
12
VCB (V)
16
IC = ic = 0; f = 1 MHz.
DC current gain as a function of collector
current.
Fig.5
Feedback capacitance as a function of
collector-base voltage.
MBB303
10
MBB304
handbook,25
halfpage
handbook, halfpage
fT
(GHz)
8
gain
(dB)
20
6
15
4
10
2
5
MSG
G max
G UM
0
0
0
10
20
30
40
0
10
20
I C (mA)
1998 Oct 02
IC (mA)
40
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Fig.6
30
Transition frequency as a function of
collector current.
Fig.7 Gain as a function of collector current.
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB305
50
MBB306
50
gain
handbook, halfpage
handbook, halfpage
gain
(dB)
(dB)
40
40
G UM
30
G UM
30
MSG
MSG
20
20
G max
G max
10
10
0
10
10
2
10
3
f (MHz) 10
0
4
10
VCE = 8 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
10
2
10
3
4
VCE = 8 V; IC = 15 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
MBB307
handbook,50
halfpage
MBB308
4
handbook, halfpage
gain
f = 2 GHz
F
(dB)
(dB)
40
10
f (MHz)
G UM
3
1 GHz
900 MHz
30
MSG
500 MHz
2
20
G max
1
10
0
10
10
2
10
3
f (MHz)
10
0
4
1
VCE = 8 V; IC = 30 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
I C (mA)
100
VCE = 8 V.
Fig.11 Minimum noise figure as a function of
collector current.
Fig.10 Gain as a function of frequency.
1998 Oct 02
10
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB309
4
handbook, halfpage
F
(dB)
I C = 30 mA
3
15 mA
5 mA
2
1
0
10 2
10 3
f (MHz)
10 4
VCE = 8 V.
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
VCE
(V)
on
IC
(mA)
8
stability
circle
re
gi
1
le
5
un
500
st
ab
f
(MHz)
0.5
2
Noise Parameters
Fmin
(dB)
0.95
Gamma (opt)
(mag)
0.455
(ang)
33.8
0.2
0.288
5
Fmin=0.95 dB
Rn/50
10
OPT
+j
0.2
0
0.5
−j
1
2
5
10
∞
1.5 dB
10
2 dB
3 dB
0.2
5
2
0.5
1
ZO = 50 Ω.
Fig.13 Noise circle figure.
1998 Oct 02
7
MBB317
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
BFG67/X
f
(MHz)
VCE
(V)
8
0.5
5
Noise Parameters
Fmin
(dB)
1.3
Gamma (opt)
(mag)
2
Fmin =1.3 dB
0.2
(ang)
0.375
1
un
s
reg table
ion
1000
stability
circle
IC
(mA)
65.9
Rn/50
0.304
5
OPT
10
+j
0.2
0
0.5
1
−j
2
5
∞
10
2 dB
10
5
3 dB
0.2
4 dB
2
0.5
MBB316
1
ZO = 50 Ω.
Fig.14 Noise circle figure.
BFG67/X
f
(MHz)
VCE
(V)
2000
8
1
IC
(mA)
0.5
2
5
Noise Parameters
Fmin
(dB)
2.2
0.2
Gamma (opt)
(mag)
(ang)
0.391
136.5
3 dB
OPT
0.184
12
5 dB
0.5
1
2
11 dB
5
∞
10
10
10 dB
9 dB
5
0.2
8 dB
(ang)
−170
2
0.5
1
ZO = 50 Ω.
Fig.15 Noise circle figure.
1998 Oct 02
10
G max
=12dB
Gamma (max)
0.839
0.2
0
–j
(mag)
4 dB
+j
Average Gain Parameters
GMAX
(dB)
5
Fmin =2.2 dB
Rn/50
8
MBB315
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+j
0.2
0
0.5
1
2
5
∞
10
−j
10
40 MHz
5
0.2
2
0.5
MBB314
1
VCE = 8 V; IC = 15 mA; ZO = 50 Ω.
Fig.16 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
150°
30°
40 MHz
+ϕ
180°
50
40
30
20
3 GHz
10
0°
−ϕ
30°
150°
120°
VCE = 8 V; IC = mA; ZO = 50 Ω.
60°
90°
MBB313
Fig.17 Common emitter forward transmission coefficient (S21).
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1
2
5
∞
10
40 MHz
−j
10
3 GHz
5
0.2
2
0.5
MBB312
1
VCE = 8 V; IC = 15 mA.
Fig.18 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
120°
60°
3 GHz
150°
180°
0.5
0.4
0.3
0.2
30°
+ϕ
40 MHz
0.1
0°
−ϕ
30°
150°
60°
120°
90°
MBB311
VCE = 8 V; IC = 15 mA.
Fig.19 Common emitter output reflection coefficient (S22).
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1998 Oct 02
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-03-10
SOT143R
1998 Oct 02
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02
15
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/04/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04349