DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES BFG67; BFG67/X; BFG67/XR PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG67/X BFG67/XR 1 collector collector collector 2 base emitter emitter 3 emitter base base 4 emitter emitter emitter Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. handbook, 2 columns 4 3 1 handbook, 2 columns 3 2 2 Top view 4 1 Top view MSB014 MSB035 MARKING TYPE NUMBER CODE BFG67 (Fig.1) V3 BFG67/X (Fig.1) V12 BFG67/XR (Fig.2) V26 Fig.1 Simplified outline SOT143B. Fig.2 Simplified outline SOT143R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 10 V − 50 mA − 300 mW VCEO collector-emitter voltage IC collector current (DC) Ptot total power dissipation Ts ≤ 65 °C Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz 8 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz 17 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz 1.3 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz 2.2 − dB 1998 Oct 02 open base 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 380 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Ts ≤ 65 °C; see Fig.3; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBC984 - 1 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 T ( o C) s Fig.3 Power derating curve. 1998 Oct 02 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. VCB = 5 V; IE = 0 − DC current gain IC = 15 mA; VCE = 5 V transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz Cc collector capacitance ICBO collector leakage current hFE fT TYP. MAX. UNIT − 50 60 100 − − 8 − GHz IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 17 − dB IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V Tamb = 25 °C; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.7 − dB IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω − 2.5 − dB IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω − 3 − dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 1998 Oct 02 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB302 MBB301 handbook,0.8 halfpage 120 handbook, halfpage Cre (pF) h FE 0.6 80 0.4 40 0.2 0 0 0 20 40 I C (mA) 60 VCE = 5 V. Fig.4 0 4 8 12 VCB (V) 16 IC = ic = 0; f = 1 MHz. DC current gain as a function of collector current. Fig.5 Feedback capacitance as a function of collector-base voltage. MBB303 10 MBB304 handbook,25 halfpage handbook, halfpage fT (GHz) 8 gain (dB) 20 6 15 4 10 2 5 MSG G max G UM 0 0 0 10 20 30 40 0 10 20 I C (mA) 1998 Oct 02 IC (mA) 40 VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V; Tamb = 25 °; f = 2 GHz. Fig.6 30 Transition frequency as a function of collector current. Fig.7 Gain as a function of collector current. 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB305 50 MBB306 50 gain handbook, halfpage handbook, halfpage gain (dB) (dB) 40 40 G UM 30 G UM 30 MSG MSG 20 20 G max G max 10 10 0 10 10 2 10 3 f (MHz) 10 0 4 10 VCE = 8 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 10 2 10 3 4 VCE = 8 V; IC = 15 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. MBB307 handbook,50 halfpage MBB308 4 handbook, halfpage gain f = 2 GHz F (dB) (dB) 40 10 f (MHz) G UM 3 1 GHz 900 MHz 30 MSG 500 MHz 2 20 G max 1 10 0 10 10 2 10 3 f (MHz) 10 0 4 1 VCE = 8 V; IC = 30 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. I C (mA) 100 VCE = 8 V. Fig.11 Minimum noise figure as a function of collector current. Fig.10 Gain as a function of frequency. 1998 Oct 02 10 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB309 4 handbook, halfpage F (dB) I C = 30 mA 3 15 mA 5 mA 2 1 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. Fig.12 Minimum noise figure as a function of frequency. BFG67/X VCE (V) on IC (mA) 8 stability circle re gi 1 le 5 un 500 st ab f (MHz) 0.5 2 Noise Parameters Fmin (dB) 0.95 Gamma (opt) (mag) 0.455 (ang) 33.8 0.2 0.288 5 Fmin=0.95 dB Rn/50 10 OPT +j 0.2 0 0.5 −j 1 2 5 10 ∞ 1.5 dB 10 2 dB 3 dB 0.2 5 2 0.5 1 ZO = 50 Ω. Fig.13 Noise circle figure. 1998 Oct 02 7 MBB317 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR BFG67/X f (MHz) VCE (V) 8 0.5 5 Noise Parameters Fmin (dB) 1.3 Gamma (opt) (mag) 2 Fmin =1.3 dB 0.2 (ang) 0.375 1 un s reg table ion 1000 stability circle IC (mA) 65.9 Rn/50 0.304 5 OPT 10 +j 0.2 0 0.5 1 −j 2 5 ∞ 10 2 dB 10 5 3 dB 0.2 4 dB 2 0.5 MBB316 1 ZO = 50 Ω. Fig.14 Noise circle figure. BFG67/X f (MHz) VCE (V) 2000 8 1 IC (mA) 0.5 2 5 Noise Parameters Fmin (dB) 2.2 0.2 Gamma (opt) (mag) (ang) 0.391 136.5 3 dB OPT 0.184 12 5 dB 0.5 1 2 11 dB 5 ∞ 10 10 10 dB 9 dB 5 0.2 8 dB (ang) −170 2 0.5 1 ZO = 50 Ω. Fig.15 Noise circle figure. 1998 Oct 02 10 G max =12dB Gamma (max) 0.839 0.2 0 –j (mag) 4 dB +j Average Gain Parameters GMAX (dB) 5 Fmin =2.2 dB Rn/50 8 MBB315 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 −j 10 40 MHz 5 0.2 2 0.5 MBB314 1 VCE = 8 V; IC = 15 mA; ZO = 50 Ω. Fig.16 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 150° 30° 40 MHz +ϕ 180° 50 40 30 20 3 GHz 10 0° −ϕ 30° 150° 120° VCE = 8 V; IC = mA; ZO = 50 Ω. 60° 90° MBB313 Fig.17 Common emitter forward transmission coefficient (S21). 1998 Oct 02 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 40 MHz −j 10 3 GHz 5 0.2 2 0.5 MBB312 1 VCE = 8 V; IC = 15 mA. Fig.18 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 120° 60° 3 GHz 150° 180° 0.5 0.4 0.3 0.2 30° +ϕ 40 MHz 0.1 0° −ϕ 30° 150° 60° 120° 90° MBB311 VCE = 8 V; IC = 15 mA. Fig.19 Common emitter output reflection coefficient (S22). 1998 Oct 02 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Oct 02 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-03-10 SOT143R 1998 Oct 02 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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