Philips Semiconductors Product specification Triacs BT136X series GENERAL DESCRIPTION Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM BT136XBT136XBT136XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current 500 500F 500G 500 600 600F 600G 600 800 800F 800G 800 V 4 25 4 25 4 25 A A IT(RMS) ITSM PIN CONFIGURATION SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Ths ≤ 92 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -500 5001 -600 6001 UNIT -800 800 V - 4 A - 25 27 3.1 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT136X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER IGT Gate trigger current IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current October 1997 CONDITIONS MIN. BT136XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 2 TYP. MAX. UNIT ... ...F ...G - 5 8 11 30 35 35 35 70 25 25 25 70 50 50 50 100 mA mA mA mA - 7 16 5 7 5 20 30 20 30 15 20 30 20 30 15 30 45 30 45 30 mA mA mA mA mA 0.25 1.4 0.7 0.4 1.70 1.5 - V V V - 0.1 0.5 mA Rev 1.200 Philips Semiconductors Product specification Triacs BT136X series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage dVcom/dt Critical rate of change of commutating voltage tgt Gate controlled turn-on time October 1997 CONDITIONS MIN. BT136XVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 3 TYP. MAX. UNIT ... 100 ...F 50 ...G 200 250 - V/µs - - 10 50 - V/µs - - - 2 - µs Rev 1.200 Philips Semiconductors Product specification Triacs 8 BT136X series BT136 Ptot / W Ths(max) / C 5 81 IT(RMS) / A BT136X 86.5 7 6 = 180 1 92 C 4 92 120 5 97.5 90 60 4 3 103 30 3 108.5 2 114 1 119.5 2 1 0 0 1 2 3 IT(RMS) / A 125 5 4 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 50 Ths / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BT136 ITSM / A 0 12 BT136 IT(RMS) / A ITSM IT 10 T time 8 Tj initial = 25 C max 100 6 dIT /dt limit 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 30 ITSM / A BT136 T Tj initial = 25 C max 1.2 1 10 0.8 5 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. October 1997 BT136 1.4 time 15 0 VGT(Tj) VGT(25 C) I TSM IT 20 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 92˚C. 1.6 25 0.1 1 surge duration / s 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 4 Rev 1.200 Philips Semiconductors Product specification Triacs 3 BT136X series IGT(Tj) IGT(25 C) Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 2 8 1 4 0.5 2 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) max Vo = 1.27 V Rs = 0.091 ohms 6 0 typ 10 1.5 0 -50 BT136 IT / A 12 BT136 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC BT136 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 unidirectional 1 bidirectional 2 1.5 0.1 1 P D tp 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 IH(Tj) IH(25C) 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dVcom/dt (V/us) off-state dV/dt limit BT136...G SERIES 2.5 BT136 SERIES 100 2 BT136...F SERIES 1.5 10 1 0.5 0 -50 dIcom/dt = 5.1 A/ms 0 50 Tj / C 100 1 150 3 50 2.3 1.8 100 1.4 150 Tj / C Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. October 1997 0 3.9 5 Rev 1.200 Philips Semiconductors Product specification Triacs BT136X series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 6 Rev 1.200 Philips Semiconductors Product specification Triacs BT136X series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 7 Rev 1.200