Philips Semiconductors Product specification Triacs BT138X series GENERAL DESCRIPTION Passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER BT138XBT138X- VDRM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current IT(RMS) ITSM PIN CONFIGURATION MAX. MAX. UNIT 600 600F 800 800F 600 800 V 12 95 12 95 A A SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Ths ≤ 56 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -600 6001 UNIT -800 800 V - 12 A - 95 105 45 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. July 2001 1 Rev 1.400 Philips Semiconductors Product specification Triacs BT138X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 4.0 5.5 - K/W K/W K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER IGT Gate trigger current IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current July 2001 CONDITIONS MIN. BT138XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 2 TYP. MAX. UNIT ... ...F - 5 8 10 22 35 35 35 70 25 25 25 70 mA mA mA mA - 7 20 8 10 6 40 60 40 60 30 40 60 40 60 30 mA mA mA mA mA 0.25 1.4 0.7 0.4 1.65 1.5 - V V V - 0.1 0.5 mA Rev 1.400 Philips Semiconductors Product specification Triacs BT138X series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage dVcom/dt Critical rate of change of commutating voltage tgt Gate controlled turn-on time July 2001 CONDITIONS MIN. BT138XVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 12 A; dIcom/dt = 5.4 A/ms; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 3 TYP. MAX. UNIT ... 100 ...F 50 250 - V/µs - - 20 - V/µs - - 2 - µs Rev 1.400 Philips Semiconductors Product specification Triacs 20 BT138X series Ths(max) / C Ptot / W 45 15 BT138X IT(RMS) / A = 180 15 56 C 120 1 65 90 10 60 10 85 30 5 105 5 0 0 5 125 15 10 0 -50 0 50 Ths / C IT(RMS) / A Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. ITSM / A 25 IT(RMS) / A 20 15 100 dI T /dt limit 10 I TSM IT T2- G+ quadrant T 5 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 100 1.6 ITSM IT T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 56˚C. ITSM / A 80 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 60 1 40 0.8 20 0 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. July 2001 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 4 Rev 1.400 Philips Semiconductors Product specification Triacs 3 BT138X series IGT(Tj) IGT(25 C) 40 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 IT / A 30 typ max Vo = 1.175 V Rs = 0.0316 Ohms 2 20 1.5 1 10 0.5 0 -50 0 50 Tj / C 100 0 150 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 10 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 1 unidirectional 2 bidirectional 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. dV/dt (V/us) IH(Tj) IH(25C) 1000 off-state dV/dt limit 2.5 BT138 SERIES 100 2 1.5 dIcom/dt = 10 1 15 A/ms 12 9.1 7 5.4 4.2 0.5 0 -50 0 50 Tj / C 100 10 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. July 2001 50 Tj / C 100 150 Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. 5 Rev 1.400 Philips Semiconductors Product specification Triacs BT138X series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 2001 6 Rev 1.400 Philips Semiconductors Product specification Triacs BT138X series DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. July 2001 7 Rev 1.400