Philips Semiconductors Product specification Thyristors GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - SOT186 PIN BT151F series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BT151FRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION 500 500 650 650 800 800 V 5.7 9 100 5.7 9 100 5.7 9 100 A A A SYMBOL DESCRIPTION case 1 cathode 2 anode 3 gate a k g 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Ths ≤ 87 ˚C all conduction angles half sine wave; Tj = 125 ˚C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -650 6501 UNIT -800 800 V - 5.7 9 A A - 100 110 50 50 A A A2s A/µs -40 - 2 5 5 5 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 1996 1 Rev 1.100 Philips Semiconductors Product specification Thyristors BT151F series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 1500 V - 12 - pF MIN. TYP. MAX. UNIT - 55 4.5 6.5 - K/W K/W K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 2 10 7 1.4 0.6 0.4 0.1 15 40 20 1.75 1.5 0.5 mA mA mA V V V mA MIN. TYP. MAX. UNIT 50 200 - 130 1000 2 - V/µs V/µs µs - 70 - µs DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω tgt tq Gate controlled turn-on time Circuit commutated turn-off time February 1996 2 Rev 1.100 Philips Semiconductors Product specification Thyristors BT151F series Ptot / W 10 conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 8 6 Ths(max) / C BT151F 120 80 ITSM / A BT151 a = 1.57 89 1.9 2.2 time T Tj initial = 125 C max 80 2.8 ITSM IT 100 98 4 60 107 4 40 116 2 0 20 0 1 2 3 IF(AV) / A 4 5 125 6 0 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT151 ITSM / A 1 25 BT151 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT 5 time T Tj initial = 125 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 10 IT(RMS) / A 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 87˚C. BT151F 1.6 87 C 8 VGT(Tj) VGT(25 C) BT151 1.4 1.2 6 1 4 0.8 2 0 -50 0.6 0 50 Ths / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. February 1996 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.100 Philips Semiconductors Product specification Thyristors 3 BT151F series IGT(Tj) IGT(25 C) 30 BT151 Tj = 125 C Tj = 25 C 25 2.5 Vo = 1.06 V Rs = 0.0304 ohms typ 20 2 1.5 15 1 10 0.5 5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 BT151 IT / A IL(Tj) IL(25 C) 0 0.5 max 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 10 BT145 BT151 Zth j-hs (K/W) without heatsink compound 2.5 1 with heatsink compound 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25 C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 10000 BT151 dVD/dt (V/us) 2.5 1000 2 RGK = 100 Ohms 1.5 100 1 gate open circuit 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. February 1996 0 4 Rev 1.100 Philips Semiconductors Product specification Thyristors BT151F series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 2 3 0.9 0.7 M 0.55 max 2.54 1.3 5.08 top view Fig.13. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1996 5 Rev 1.100 Philips Semiconductors Product specification Thyristors BT151F series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 6 Rev 1.100