IRF ST2100C32R0

Bulletin I25198 rev. B 02/00
ST2100C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2090A
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
ST2100C..R
Units
1770
A
80
°C
2090
A
55
°C
3850
A
25
°C
@ 50Hz
36250
A
@ 60Hz
38000
A
@ 50Hz
6570
KA2s
@ 60Hz
5990
KA2s
3000 to 4200
V
IT(AV)
@ TC
IT(AV)
@ Ths
IT(RMS)
@ Ths
ITSM
I2t
VDRM /VRRM
tq
typical
500
µs
TJ
max.
125
°C
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1
ST2100C..R Series
Bulletin I25198 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
V DRM/V RRM, max. repetitive
peak and off-state voltage
V
VRSM , maximum nonrepetitive peak voltage
V
30
3000
3100
32
3200
3300
34
36
3400
3600
3500
3700
38
40
3800
4000
3900
4100
42
4200
4300
ST2100C..R
I DRM /IRRM max.
@ TC = 125°C
mA
250
On-state Conduction
I T(AV)
Parameter
ST2100C..R
Units
Max. average on-state current
1770 (1150)
A
@ Case temperature
IT(AV) Max. average on-state current
@ Heatsink temperature
Conditions
80
°C
180° conduction, half sine wave
2090 (940)
A
double side (single side [anode side]) cooled
55 (85)
°C
I T(RMS) Max. RMS on-state current
3850
A
I TSM
Max. peak, one-cycle
36250
t = 10ms
non-repetitive surge current
38000
t = 8.3ms
reapplied
t = 10ms
50% VRRM
29000
I 2t
Maximum I2t for fusing
A
DC @ 25°C heatsink temperature double side cooled
30350
t = 8.3ms
reapplied
Sinusoidal half wave,
6570
t = 10ms
No voltage
Initial TC = 125°C
t = 8.3ms
reapplied
t = 10ms
50% VRRM
t = 8.3ms
reapplied
5990
4205
2
KA s
3820
V T(TO) Max. value of threshold voltage
1.03
V
TJ = TJ max.
rt
0.32
mΩ
T J = TJ max.
Max. value of on-state slope
resistance
No voltage
V TM
Max. on-state voltage
1.875
V
IL
Typical latching current
300
mA
I = 2900A, TC = 25°C
pk
T J = 25°C, VD = 5V
Switching
Parameter
di/dt
d
Units Conditions
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
t
ST2100C..R
150 (300)
Maximum delay time
2.5
Typical turn-off time
500
A/µs
2
q
TJ = TJ max.
Gate drive 30V, 15Ω, Vd = 67% VDRM, T J = 25°C
Rise time 0.5µs
µs
t
From 67% VDRM to 1000A gate drive 20V, 10Ω, tr = 0.5µs
IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
dIRR/dt = 2A/µs, VDR = 67% VDRM, dVDR/dt = 8V/µs linear
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Blocking
Parameter
ST2100C..R
Units
Conditions
dv/dt
Maximum linear rate of rise of
off-state voltage
500
V/µs
TJ = TJ max. to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM /V RRM applied
ST2100C..R
Units
Triggering
Parameter
Conditions
PGM
Maximum peak gate power
150
PG(AV)
Maximum average gate power
10
IGM
Max. peak positive gate current
30
VGM
Max. peak positive gate voltage
30
V
Anode positive with respect to cathode
-V GM
Max. peak negative gate voltage
0.25
V
Anode positive with respect to cathode
IGT
Maximum DC gate current
400
mA
TC = 25°C, VDRM = 5V
4
V
TC = 25°C, VDRM = 5V
0.25
V
TC = 125°C
ST2100C..R
Units
required to trigger
VGT
Maximum gate voltage required
to trigger
VGD
DC gate voltage not to trigger
t = 100µs
W
A
p
Anode positive with respect to cathode
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
TJ max. Max. operating temperature
125
Tstg
Max. storage temperature range
RthJ-C
Thermal resistance, junction
0.019
to case
0.0095
Rth(C-h) Thermal resistance, case
to heatsink
F
wt
°C
-55 to 125
K/W
0.004
K/W
0.002
Mounting force ± 10%
Approximate weight
Case style
Conditions
On-state (conducting)
43000
N
(4400)
(Kg)
1600
g
(R-PUK)
DC operation single side cooled
DC operation double side cooled
Single side cooled
Double side cooled
Clamping force 43KN with
mounting compound
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
180°
0.0010
0.0010
120°
0.0017
0.0017
60°
0.0044
0.0044
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Units
Conditions
TJ = TJ max.
K/W
3
ST2100C..R Series
Bulletin I25198 rev. B 02/00
Ordering Information Table
Device Code
ST 210
1
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
2
0
C
42
R
1
3
4
5
6
7
8
5
-
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6
-
R = Puk Case
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
3 7.7 (1 .5 ) M A X.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° ± 5°
6 .3
.2
(0
4)
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
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ST2100C..R Series
130
ST2100C..R Series
(Single Side Cooled)
R thJ-hs (DC) = 0.023 K/W
120
110
100
90
Conduction Angle
80
70
60
50
60˚
120˚
40
30
180˚
DC
20
0
500
1000
1500
2000
2500
Maximum Allowable Heatsink Temperature
(°C)
Maximum Allowable Heatsink Temperature
(°C)
Bulletin I25198 rev. B 02/00
130
ST2100C..R Series
(Double Side Cooled)
R thJ-hs (DC) = 0.0115 K/W
120
110
100
90
Conduction Angle
80
70
60
60˚
120˚
50
180˚
40
30
DC
20
0
1000
Average On-state Current (A)
Maximum Average On-state Current (A)
DC
180˚
120˚
60˚
6000
RMS Limit
5000
4000
3000
Conduction Angle
2000
ST2100C..R Series
T J = 125˚C
1000
0
0
1000
2000
3000
4000
Fig. 2 - Current Ratings Characteristics
4000
10000
TJ = 125˚C
1000
ST2100C..R Series
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Average On-state Current (A)
Average On-state Voltage (V)
Fig. 3- On-state Power Loss Characteristics
Fig. 4- On-state VoltageDrop Characteristics
35000
At Any Rated Load Condition And With
50% Rated V
Applied Following Surge
RRM
Initial T J= 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
30000
25000
20000
15000
10000
ST2100C..R Series
5000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Peak Half Sine Wave On-state Current (A)
9000
7000
3000
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
8000
2000
60000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125˚C
50% Rated V RRM
Reapplied
55000
50000
45000
40000
35000
ST2100C..R Series
30000
25000
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
ST2100C..R Series
Bulletin I25198 rev. B 02/00
Total Stroed Charge - Qrr (µC)
100000
T J = 125˚C
IT
dIT
dt
t
tp = 3ms
I T= 2000A
Qrr
10000
IRM (REC)
ST2100C..R Series
1000
0.1
1
10
100
Rate Of Decay Of On-state Current - di/dt (A/µs)
Transient Thermal Impedance Z thJ-hs (K/W)
Fig. 7 - Stored Charged
0.1
ST2100C..R Series
0.01
Steady State Value
R thJ-C = 0.019 K/W
(Single Side Cooled)
0.001
R thJ-C = 0.0095 K/W
(Double Side Cooled)
(DC Operation)
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
VGD
Tj=-40 ˚ C
1
(5)
Tj=25 ˚ C
Tj=125 ˚ C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(6)
(3)
(4)
IGD
Device: ST2100C..R Series
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
6
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