Bulletin I25198 rev. B 02/00 ST2100C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 2090A Double side cooling High surge capability High mean current Fatigue free Typical Applications DC motor controls Controlled DC power supplies AC controllers (R-PUK) Major Ratings and Characteristics Parameters ST2100C..R Units 1770 A 80 °C 2090 A 55 °C 3850 A 25 °C @ 50Hz 36250 A @ 60Hz 38000 A @ 50Hz 6570 KA2s @ 60Hz 5990 KA2s 3000 to 4200 V IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM I2t VDRM /VRRM tq typical 500 µs TJ max. 125 °C www.irf.com 1 ST2100C..R Series Bulletin I25198 rev. B 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM/V RRM, max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 30 3000 3100 32 3200 3300 34 36 3400 3600 3500 3700 38 40 3800 4000 3900 4100 42 4200 4300 ST2100C..R I DRM /IRRM max. @ TC = 125°C mA 250 On-state Conduction I T(AV) Parameter ST2100C..R Units Max. average on-state current 1770 (1150) A @ Case temperature IT(AV) Max. average on-state current @ Heatsink temperature Conditions 80 °C 180° conduction, half sine wave 2090 (940) A double side (single side [anode side]) cooled 55 (85) °C I T(RMS) Max. RMS on-state current 3850 A I TSM Max. peak, one-cycle 36250 t = 10ms non-repetitive surge current 38000 t = 8.3ms reapplied t = 10ms 50% VRRM 29000 I 2t Maximum I2t for fusing A DC @ 25°C heatsink temperature double side cooled 30350 t = 8.3ms reapplied Sinusoidal half wave, 6570 t = 10ms No voltage Initial TC = 125°C t = 8.3ms reapplied t = 10ms 50% VRRM t = 8.3ms reapplied 5990 4205 2 KA s 3820 V T(TO) Max. value of threshold voltage 1.03 V TJ = TJ max. rt 0.32 mΩ T J = TJ max. Max. value of on-state slope resistance No voltage V TM Max. on-state voltage 1.875 V IL Typical latching current 300 mA I = 2900A, TC = 25°C pk T J = 25°C, VD = 5V Switching Parameter di/dt d Units Conditions Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t ST2100C..R 150 (300) Maximum delay time 2.5 Typical turn-off time 500 A/µs 2 q TJ = TJ max. Gate drive 30V, 15Ω, Vd = 67% VDRM, T J = 25°C Rise time 0.5µs µs t From 67% VDRM to 1000A gate drive 20V, 10Ω, tr = 0.5µs IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V, p dIRR/dt = 2A/µs, VDR = 67% VDRM, dVDR/dt = 8V/µs linear www.irf.com ST2100C..R Series Bulletin I25198 rev. B 02/00 Blocking Parameter ST2100C..R Units Conditions dv/dt Maximum linear rate of rise of off-state voltage 500 V/µs TJ = TJ max. to 67% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 250 mA TJ = 125°C rated VDRM /V RRM applied ST2100C..R Units Triggering Parameter Conditions PGM Maximum peak gate power 150 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 30 VGM Max. peak positive gate voltage 30 V Anode positive with respect to cathode -V GM Max. peak negative gate voltage 0.25 V Anode positive with respect to cathode IGT Maximum DC gate current 400 mA TC = 25°C, VDRM = 5V 4 V TC = 25°C, VDRM = 5V 0.25 V TC = 125°C ST2100C..R Units required to trigger VGT Maximum gate voltage required to trigger VGD DC gate voltage not to trigger t = 100µs W A p Anode positive with respect to cathode Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter TJ max. Max. operating temperature 125 Tstg Max. storage temperature range RthJ-C Thermal resistance, junction 0.019 to case 0.0095 Rth(C-h) Thermal resistance, case to heatsink F wt °C -55 to 125 K/W 0.004 K/W 0.002 Mounting force ± 10% Approximate weight Case style Conditions On-state (conducting) 43000 N (4400) (Kg) 1600 g (R-PUK) DC operation single side cooled DC operation double side cooled Single side cooled Double side cooled Clamping force 43KN with mounting compound See Outline Table ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle Single side Double side 180° 0.0010 0.0010 120° 0.0017 0.0017 60° 0.0044 0.0044 www.irf.com Units Conditions TJ = TJ max. K/W 3 ST2100C..R Series Bulletin I25198 rev. B 02/00 Ordering Information Table Device Code ST 210 1 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 2 0 C 42 R 1 3 4 5 6 7 8 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - R = Puk Case 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Outline Table 112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. 3 7.7 (1 .5 ) M A X. TWO PLACES GATE 1.5 (0.06) DIA. ANODE HOLE 1.5 (0.06) DIA. MAX. 4.76 (0.2) CATHODE 20° ± 5° 6 .3 .2 (0 4) (R-PUK) All dimensions in millimeters (inches) 3.7 (0.15) DIA. NOM. X 2.1 (0.1) DEEP MIN. BOTH ENDS 4 Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) www.irf.com ST2100C..R Series 130 ST2100C..R Series (Single Side Cooled) R thJ-hs (DC) = 0.023 K/W 120 110 100 90 Conduction Angle 80 70 60 50 60˚ 120˚ 40 30 180˚ DC 20 0 500 1000 1500 2000 2500 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25198 rev. B 02/00 130 ST2100C..R Series (Double Side Cooled) R thJ-hs (DC) = 0.0115 K/W 120 110 100 90 Conduction Angle 80 70 60 60˚ 120˚ 50 180˚ 40 30 DC 20 0 1000 Average On-state Current (A) Maximum Average On-state Current (A) DC 180˚ 120˚ 60˚ 6000 RMS Limit 5000 4000 3000 Conduction Angle 2000 ST2100C..R Series T J = 125˚C 1000 0 0 1000 2000 3000 4000 Fig. 2 - Current Ratings Characteristics 4000 10000 TJ = 125˚C 1000 ST2100C..R Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Average On-state Current (A) Average On-state Voltage (V) Fig. 3- On-state Power Loss Characteristics Fig. 4- On-state VoltageDrop Characteristics 35000 At Any Rated Load Condition And With 50% Rated V Applied Following Surge RRM Initial T J= 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 30000 25000 20000 15000 10000 ST2100C..R Series 5000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig.5 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 9000 7000 3000 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 8000 2000 60000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125˚C 50% Rated V RRM Reapplied 55000 50000 45000 40000 35000 ST2100C..R Series 30000 25000 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 5 ST2100C..R Series Bulletin I25198 rev. B 02/00 Total Stroed Charge - Qrr (µC) 100000 T J = 125˚C IT dIT dt t tp = 3ms I T= 2000A Qrr 10000 IRM (REC) ST2100C..R Series 1000 0.1 1 10 100 Rate Of Decay Of On-state Current - di/dt (A/µs) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 7 - Stored Charged 0.1 ST2100C..R Series 0.01 Steady State Value R thJ-C = 0.019 K/W (Single Side Cooled) 0.001 R thJ-C = 0.0095 K/W (Double Side Cooled) (DC Operation) 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 (1) PGM = 2W (2) PGM = 4W (3) PGM = 8W (4) PGM = 20W (5) PGM = 50W (6) PGM =100W VGD Tj=-40 ˚ C 1 (5) Tj=25 ˚ C Tj=125 ˚ C Instantaneous Gate Voltage (V) 100 (1) (2) (6) (3) (4) IGD Device: ST2100C..R Series 0.1 0.001 0.01 Frequency Limited by PG(AV) 0.1 1 10 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics 6 www.irf.com