Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR725D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 20 V/ 25 V k tab a 3 IF(AV) = 7.5 A VF ≤ 0.4 V PINNING Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR725D series is supplied in the SOT428 surface mounting package. PIN SOT428 DESCRIPTION 1 no connection 2 cathode1 3 anode tab 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR7 VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - 20D 20 25D 25 V - 20 25 V Tmb ≤ 119 ˚C - 20 25 V square wave; δ = 0.5; Tmb ≤ 138 ˚C - 7.5 A square wave; δ = 0.5; Tmb ≤ 138 ˚C - 15 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 100 110 A A - 1 A - 150 ˚C - 65 175 ˚C 1 it is not possible to make connection to pin 2 of the SOT428 package February 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR725D series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, minimum footprint, FR4 board TYP. MAX. UNIT - - 3 K/W - 50 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Cd Junction capacitance February 1998 CONDITIONS MIN. IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C 2 - TYP. MAX. UNIT 0.33 0.45 0.52 0.2 15 580 0.4 0.52 0.62 5 30 - V V V mA mA pF Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 6 Forward dissipation, PF (W) PBYR725D series PBYR725D Tmb(max) / C Vo = 0.28 V Rs = 0.016 Ohms 125 C 135 5 138 75 C 1mA 0.2 3 10mA 100 C D = 1.0 0.5 4 PBYR725D Reverse current, IR (A) 100mA 132 141 0.1 50 C 100uA 2 tp I D= 144 tp T 147 10uA 150 12 1uA 1 t T 0 0 2 Tj = 25 C 4 6 8 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 4 Forward dissipation, PF (W) PBYR725D Vo = 0.28 V Rs = 0.016 Ohms 0 5 10 15 Reverse voltage, VR (V) 20 25 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj Tmb(max) / C 138 a = 1.57 10000 PBYR725D Junction capacitance, Cd (pF) 1.9 2.2 3 4 141 2.8 2 144 1 147 0 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 1000 150 8 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 15 Forward current, IF (A) 1 10 Reverse voltage, VR (V) 100 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR725D 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 1 typ 10 max 0.1 5 PD 0.01 0 0 0.2 0.4 0.6 Forward voltage, VR (V) 0.8 0.001 1us 1 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj February 1998 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.6. Transient thermal impedance; Zth j-mb = f(tp). 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR725D series MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.7. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.8. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". February 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR725D series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 5 Rev 1.000