DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. = drain 2 = source 3 = gate d g PINNING 1 3 handbook, halfpage 1 s 2 Top view MAM385 Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking code BSR56 = M4P BSR57 = M5P BSR58 = M6P QUICK REFERENCE DATA BSR56 BSR57 BSR58 Drain-source voltage ±VDS max. 40 40 40 V Total power dissipation up to Tamb = 40 °C Ptot max. 250 250 250 mW > 50 20 8 mA < − 100 80 mA > 4 2 0.8 V < 10 6 4 V rds on < 25 40 60 Ω Crs < 5 5 5 pF ID = 20 mA; −VGSM = 10 V toff < 25 − − ns ID = 10 mA; −VGSM = 6 V toff < − 50 − ns ID = 5 mA; −VGSM = 4 V toff < − − 100 ns Drain current VDS = 15 V; VGS = 0 IDSS Gate-source cut-off voltage VDS = 15 V; ID = 0.5 nA −V(P)GS Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Feedback capacitance at f = 1 MHz −VGS = 10 V; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 April 1991 2 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 40 V Drain-gate voltage VDGO max. 40 V Gate-source voltage −VGSO max. 40 V Forward gate current IGF max. 50 mA Total power dissipation up to Tamb = 40 °C (note 1) Ptot max. 250 mW −65 to +150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 430 K/W THERMAL RESISTANCE From junction to ambient (note 1) Notes 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate-source cut-off current VDS = 0 V; −VGS = 20 V −IGSS max. 1.0 nA IDSX max. 1.0 nA Drain cut-off current VDS = 15 V; −VGS = 10 V BSR56 BSR57 BSR58 Drain current VDS = 15 V; VGS = 0 IDSS > 50 20 8 mA < − 100 80 mA > 40 40 40 V > 4 2 0.8 V < 10 6 4 V − mV Gate-source breakdown voltage −IG = 1 µA; VDS = 0 −V(BR)GSS Gate-source cut-off voltage ID = 0,5 nA; VDS = 15 V −V(P)GS Drain-source voltage (on) ID = 20 mA; VGS = 0 VDSon < 750 − ID = 10 mA; VGS = 0 VDSon < − 500 − mV ID = 5 mA; VGS = 0 VDSon < − − 400 mV rds on < 25 40 60 Ω Crss < 5 5 Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0; Ta = 25 °C Feedback capacitance at f = 1 MHz −VGS = 10 V; VDS = 0 April 1991 3 5 pF Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 BSR56 BSR57 BSR58 Switching times VDD = 10 V; VGS = 0 Conditions ID and −VGSM ID = 20 10 5 mA −VGSM = 10 6 4 V Delay time td < 6 6 10 ns Rise time tr < 3 4 10 ns Turn-off time toff < 25 50 100 ns 0 handbook, halfpage VDD handbook, halfpage Vi R VGSM td Vo 200 ns tr Vi toff 10% T.U.T 50 Ω Vo MBK298 90% MBK299 Fig.2 Switching times waveforms. BSR56; R = 464 Ω BSR57; R = 953 Ω BSR58; R = 1910 Ω Fig.3 Test circuit. MDA245 300 handbook, halfpage Ptot (mW) Pulse generator 200 tr = tf ≤ 1 ns δ = 0.02 Zo = 50 Ω 100 Oscilloscope tr ≤ 0.75 ns Ri ≥ Ci ≤ 1 MΩ 0 2.5 pF 0 40 80 120 200 160 Tamb (°C) Fig.4 Power derating curve. April 1991 4 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1991 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 6