DISCRETE SEMICONDUCTORS DATA SHEET PN4391 to 4393 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1989 Philips Semiconductors Product specification N-channel silicon field-effect transistors PN4391 to 4393 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 handbook, halfpage 2 3 1 = gate d g 2 = source s MAM042 3 = drain Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage ± VDS max. Ptot max. 40 V Total power dissipation up to Tamb = 25 °C 360 PN4391 PN4392 mW PN4393 Drain current VDS = 20 V; VGS = 0 IDSS min. 50 25 5 mA −VGS off min. 4 2 0.5 V max. 10 5 3 V RDS on max. 30 60 100 Ω Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 40 V Gate-source voltage −VGSO max. 40 V Gate-drain voltage −VGDO max. 40 V Forward gate current (DC) IG max. 50 mA Ptot max. 360 mW Total power dissipation up to Tamb = 25 °C Storage temperature range Tstg Junction temperature Tj April 1989 2 max. −65 to+150 °C 150 °C Philips Semiconductors Product specification N-channel silicon field-effect transistors PN4391 to 4393 THERMAL RESISTANCE From junction to ambient in free air Rth j-a = 350 K/W STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PN4391 PN4392 PN4393 Reverse gate current −VGS = 20 V; VDS = 0 −IGSS max. 1.0 1.0 1.0 nA −IGSS max. 200 200 200 nA IDSX max. 1.0 IDSX max. IDSX max. IDSX max. IDSX max. IDSX max. −VGS = 20 V; VDS = 0 Tamb = 100 °C Drain cut-off current −VGS = 12 V −VGS = 7 V VDS = 20 V −VGS = 5 V −VGS = 12 V −VGS = 7 V −VGS = 5 V VDS = 20 V; Tamb = 100 °C nA 1.0 nA 1.0 nA 200 nA 200 nA 200 nA Drain saturation current min. 50 25 5 mA max. 150 100 60 mA −V(BR)GSS min. 40 40 40 V −VGS off min. 4.0 2.0 0.5 V max. 10 5.0 3.0 V RDS on max. 30 60 100 Ω VGS = 0; ID = 12 mA VDS on max. 0.4 VGS = 0; ID = 6 mA VDS on max. VGS = 0; ID = 3 mA VDS on max. VDS = 20 V; VGS = 0 IDSS Gate-source breakdown voltage −IG = 1 µA; VDS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 Drain-source on-voltage April 1989 3 V 0.4 V 0.4 V Philips Semiconductors Product specification N-channel silicon field-effect transistors PN4391 to 4393 DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PN4391 PN4392 PN4393 Drain-source on-resistance VDS = 0 V; VGS = 0; f = 1 kHz; Ta = 25 °C RDS on max. 30 60 Ciss max. 16 16 Crss max. 5 Crss max. Crss max. 100 Ω Input capacitance VDS = 20 V; VGS = 0; f = 1 MHz; Ta = 25 °C 16 pF Feedback capacitance VDS = 0; −VGS = 12 V VDS = 0; −VGS = 7 V f = 1 MHz VDS = 0; −VGS = 5 V pF 5 pF 5 pF Switching times test conditions VDD = 10 V; VGS = 0 to VGS off ID = 12 6.0 3.0 mA −VGS off = 12 7.0 5.0 V RL = 750 1550 3150 Ω tr max. 5 5 5 ns Turn-on time ton max. 15 15 15 ns Fall time tf max. 15 20 30 ns Turn-off time toff max. 20 35 50 ns Rise time VDD 10 nF VGS = 0 V 1 µF 50 Ω ok, halfpage 10% Vi 10 µF RL DUT 90% −VGS off SAMPLING SCOPE 50 Ω toff ton tf 50 Ω tr 90% Vo MBK289 10% MBK288 Fig.2 Switching times test circuit. April 1989 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors PN4391 to 4393 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 April 1989 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel silicon field-effect transistors PN4391 to 4393 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1989 6