DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 • High speed switching d g • Interchangeability of drain and source connections s MAM042 • Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage J111 J112 J113 ±VDS max. 40 40 40 IDSS min. 20 5 2 mA Ptot max. 400 400 400 mW −VGS off min. max. 3 10 1 5 0.5 3 V V RDS on max. 30 50 100 Ω V Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 July 1993 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ±VDS max. 40 V Gate-source voltage −VGSO max. 40 V Gate-drain voltage −VGDO max. 40 V Gate forward current (DC) IG max. 50 mA Ptot max. Total power dissipation up to Tamb = 50 °C 400 mW −65 to + 150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 250 K/W THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current −VGS = 15 V; VDS = 0 −IGSS max. 1 1 1 nA −IDSX max. 1 1 1 nA IDSS min. 20 5 2 mA −V(BR)GSS min. 40 40 40 V −VGS off min. 3 1 0.5 V max. 10 5 3 V RDSon max. 30 50 100 Ω Drain cut-off current VDS = 5 V; −VGS = 10 V Drain saturation current VDS = 15 V; VGS = 0 Gate-source breakdown voltage −IG = 1 µA; VDS = 0 Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 July 1993 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified Input capacitance VDS = 0; −VGS = 10 V; f = 1 MHz Cis VDS = −VGS = 0; f = 1 MHz Cis typ. 6 pF typ. 22 pF max. 28 pF Crs typ. 3 pF Feedback capacitance VDS = 0; −VGS = 10 V; f = 1 MHz Switching times test conditions VDD = 10 V; VGS = 0 to VGSoff −VGS off = 12 V; RL = 750 Ω for J111 −VGS off = 7 V; RL = 1550 Ω for J112 −VGS off = 5 V; RL = 3150 Ω for J113 Rise time tr typ. 6 ns Turn-on time ton typ. 13 ns Fall time tf typ. 15 ns Turn-off time toff typ. 35 ns VGS = 0 V VDD 10% 1 µF 50 Ω ok, halfpage Vi 10 nF 10 µF RL DUT VGS off 90% toff SAMPLING SCOPE 50 Ω ton tf 50 Ω tr 90% Vo MBK289 10% MBK288 Fig.2 Switching times test circuit. July 1993 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 July 1993 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1993 6