DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAT254 Schottky barrier diode Product specification Supersedes data of 1996 Mar 19 1999 Apr 22 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic SMD package. • Guard ring protected • Very small ceramic SMD package. APPLICATIONS cathode mark handbook, 4 columns a k k a • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. bottom view side view top view MAM214 Marking code: L4. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 1999 Apr 22 2 Philips Semiconductors Product specification Schottky barrier diode BAT254 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 µA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA: see Fig.5 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 10 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD110 standard mounting conditions. 1999 Apr 22 3 VALUE UNIT 315 K/W Philips Semiconductors Product specification Schottky barrier diode BAT254 GRAPHICAL DATA MSA892 IF (mA) IR (µA) (1) (2) (3) 10 MSA893 10 3 3 10halfpage handbook, 2 (1) 10 2 (2) 10 10 1 10 1 (1) (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 10 20 30 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. MSA891 15 Cd (pF) handbook, halfpage I F dI F 10 dt 10% t 5 Qr 90% IR 0 0 10 20 V R (V) tf MRC129 - 1 30 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 Apr 22 Fig.5 Reverse recovery definitions. 4 Philips Semiconductors Product specification Schottky barrier diode BAT254 MOUNTING Wave soldering Reflow soldering Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.7). Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.6). handbook, halfpage ,, ,,, ,, ,,, ,, ,,, ,,,,, 1.25 1.25 1.00 1.00 1.10 MGC119 Dimensions in mm. 1.10 MGC126 Dimensions in mm. Fig.7 SOD110 wave soldering pattern. Fig.6 SOD110 reflow soldering pattern. 1999 Apr 22 3.40 handbook, halfpage 3.00 5 Philips Semiconductors Product specification Schottky barrier diode BAT254 PACKAGE OUTLINE Very small ceramic rectangular surface mounted package D SOD110 E A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 1 mm UNIT A max. D E y mm 1.6 2.10 1.90 1.40 1.10 0.1 scale OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-14 SOD110 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 6 Philips Semiconductors Product specification Schottky barrier diode BAT254 NOTES 1999 Apr 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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