Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V a2 3 a1 1 IO(AV) = 10 A VF ≤ 0.6V k 2 GENERAL DESCRIPTION PINNING Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. PIN SOT82 DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT - 35CT 40CT 45CT 35 40 45 V PBYR6 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature - 35 40 45 V Tmb ≤ 100 ˚C - 35 40 45 V square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 75 82 A A - 1 A - 150 ˚C - 65 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb per diode both diodes in free air Rth j-a May 1998 Thermal resistance junction to mounting base Thermal resistance junction to ambient MIN. - 1 TYP. MAX. UNIT 100 5 4 - K/W K/W K/W Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CT series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Cd Junction capacitance IF = 5 A; Tj = 125˚C IF = 10 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C May 1998 MIN. 2 - TYP. MAX. UNIT 0.51 0.72 0.12 10 150 0.6 0.87 0.5 15 - V V mA mA pF Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 6 Forward dissipation, PF (W) PBYR645CT series PBYR645CT Tmb(max) / C Vo = 0.438 V Rs = 0.033 Ohms 5 D = 1.0 100 PBYR645CT Reverse current, IR (mA) 125 125 C 10 0.5 4 120 130 100 C 0.2 3 135 0.1 2 I tp D= tp T Tj = 25 C 145 1 2 3 4 5 6 Average forward current, IF(AV) (A) 0.01 150 8 7 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 5 PBYR645CT Forward dissipation, PF (W) Tmb(max) / C 2.2 Cd / pF 125 135 100 2 140 1 145 10 150 5 1 2 3 4 Average forward current, IF(AV) (A) Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 20 PBYR645CT 1.9 2.8 0 50 1000 4 0 25 Reverse voltage, VR (V) 130 a = 1.57 3 0 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Vo = 0.438 V Rs = 0.033 Ohms 4 50 C 0.1 t T 0 75 C 140 1 0 1 10 VR / V 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. BYV118 Forward current, IF (A) 1 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 15 1 typ 10 max 0.1 PD 5 tp D= T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj May 1998 1us 10us 100us tp T t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR645CT Fig.6. Transient thermal impedance; per diode; Zth j-mb = f(tp). 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CT series MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g 2.8 2.3 mounting base 7.8 max 3.75 3.1 2.5 1) 2.54 max 11.1 max 1.2 15.3 min 1 2 3 0.5 4.58 2.29 0.88 max 1) Lead dimensions within this zone uncontrolled. Fig.7. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 5 Rev 1.200