PHILIPS PBYL1620B

Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
PBYL1625B series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
QUICK REFERENCE DATA
VR = 20 V/ 25 V
k
tab
a
3
IF(AV) = 16 A
VF ≤ 0.46 V
PINNING
Schottky rectifier diodes intended
for use as output rectifiers in low
voltage, high frequency switched
mode power supplies.
The PBYL1625B series is supplied
in the SOT404 surface mounting
package.
PIN
SOT404
DESCRIPTION
1
no connection
2
cathode 1
3
anode
tab
2
tab
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYL16
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
20B
20
25B
25
V
-
20
25
V
Tmb ≤ 120 ˚C
-
20
25
V
square wave; δ = 0.5; Tmb ≤ 131 ˚C
-
16
A
square wave; δ = 0.5; Tmb ≤ 131 ˚C
-
32
A
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
135
150
A
A
-
1
A
-
150
˚C
- 65
175
˚C
1. It is not possible to make connection to pin 2 ofthe SOT404 package.
October 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL1625B series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
pcb mounted, minimum footprint, FR4
board
TYP. MAX. UNIT
-
-
2
K/W
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
October 1998
CONDITIONS
MIN.
IF = 16 A; Tj = 125˚C
IF = 32 A; Tj = 125˚C
IF = 32 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
2
-
TYP. MAX. UNIT
0.42
0.57
0.55
1
22
700
0.46
0.61
0.68
5
40
-
V
V
V
mA
mA
pF
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
15
PBYL1625B series
PBYL1625
Forward dissipation, PF (W)
Tmb(max) / C
Vo = 0.32 V
Rs = 0.009 Ohms
PBYR2025CT
Tj = 150 C
D = 1.0
100mA
125
0.5
10
IR / A
1A
120
130
100
10mA
0.2
0.1
75
1mA
5
tp
I
D=
140
tp
T
50
100uA
t
T
0
0
5
10
15
20
Average forward current, IF(AV) (A)
150
25
10uA
Forward dissipation, PF (W) PBYL1625
Tmb(max) / C
Vo = 0.32 V
Rs = 0.009 Ohms
a = 1.57
10
2.2
8
0
5
10
15
20
25
VR / V
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
12
25
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
10000
126
PBYR2025CT
Cd / pF
130
1.9
134
2.8
4
6
138
4
142
2
146
0
0
5
10
Average forward current, IF(AV) (A)
1000
150
15
100
Fig.2. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
30
typ
25
100
10
Transient thermal impedance, Zth j-mb (K/W)
max
Tj = 25 C
Tj = 125 C
20
10
VR / V
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
PBYR2025CT
IF / A
1
1
0.1
15
10
PD
0.01
tp
D=
tp
T
5
0
0
0.2
0.4
0.6
0.8
0.001
1us
1
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1998
T
10us
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1625
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL1625B series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL1625B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
5
Rev 1.100