PD - 91312E IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) ® ™ RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID -4.0A -4.0A QPL Part Number JANSR2N7390 JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-39 Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -4.0 -2.4 -16 25 0.2 ±20 171 -4.0 2.5 -27 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical) g For footnotes refer to the last page www.irf.com 1 2/18/03 IRHF9230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -200 — — V — -0.25 — V/°C — — -2.0 2.5 — — — — — — — — 0.80 0.92 -4.0 — -25 -250 Ω — — — — — — — — — — — — — — — — — — — 7.0 -100 100 45 10 25 30 30 75 65 — ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID =-1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, I D = -2.4A➃ VGS = -12V, ID = -4.0A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -4.0A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -4.0A VDS = -100V V S( ) Ω BVDSS µA nA nC VDD = -100V, ID = -4.0A, VGS =-12V, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 190 45 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -4.0 -16 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -5.0 400 1.6 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = -4.0A, VGS = 0V ➃ Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs VDD ≤ -100V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 5.0 175 Units °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF9230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃ Units Test Conditions V µA Ω VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS=-160V, VGS =0V VGS = -12V, ID =-2.4A 0.8 Ω VGS = -12V, ID =-2.4A -5.0 V VGS = 0V, IS = -4.0A 300K Rads (Si)2 Min Max Min Max -200 -2.0 — — — — — -4.0 -100 100 -25 0.8 -200 -2.0 — — — — — -5.0 -100 100 -25 0.8 nA — 0.8 — — -5.0 — 1. Part number IRHF9230 (JANSR2N7390) 2. Part number IRHF93230 (JANSF2N7390) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VDS(V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28.0 285 43.0 -200 -200 -200 -200 — Br 36.8 305 39.0 -200 -200 -125 -75 — -250 VDS -200 -150 Cu Br -100 -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF9230 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 20µs PULSE WIDTH T = 25 C 1 1 10 -5.0V 10 1 TJ = 25 ° C 10 TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 7.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 8.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.5 7.0 100 Fig 2. Typical Output Characteristics 100 6.5 ° 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 J 1 100 -VDS , Drain-to-Source Voltage (V) 5.5 20µs PULSE WIDTH T = 150 C ° J 1 5.0 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -4.0A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com Pre-Irradiation VGS = Ciss = Crss = Coss = 1600 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 1200 800 Coss 400 Crss 20 -VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) IRHF9230 0 1 10 ID = -4.0A VDS =-160V VDS =-100V VDS =-40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 -VDS , Drain-to-Source Voltage (V) 10 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R 10us - ID , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 3.0 3.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 4.0 10 100us 1ms 1 10ms 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF9230 Pre-Irradiation 4.0 VGS -ID , Drain Current (A) RD VDS D.U.T. RG 3.0 - + V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. CaseTemperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 0.01 0.00001 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF9230 L VDS tp VD D A IA S D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG -2 V V0GS 400 ID -1.8A -2.5A BOTTOM -4.0A TOP 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF9230 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L=21.4mH Peak I L = -4.0A, VGS =-12V ➂ ISD ≤ -4.0A, di/dt ≤ -150A/µs, VDD ≤ -200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF(Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com