PD-91401 IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) ™ ® RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on) 0.8Ω 0.8Ω ID QPL Part Number -6.5A JANSR2N7383 -6.5A JANSF2N7383 TO-257AA TM HEXFET® International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units -6.5 -4.1 -26 75 0.6 ±20 165 -6.5 7.5 -27 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 12/05/00 IRHY9230CM, JANSR2N7383 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — V -0.27 — V/°C — 0.8 Ω — — — — -4.0 — -25 -250 V S( ) — — — — — — — — — 6.8 -100 100 45 10 25 30 50 75 65 — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -4.1A ➃ nC VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -4.1A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -100V ns VDD = -100V, ID = -6.5A RG = 7.5Ω Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.0 IDSS Zero Gate Voltage Drain Current — — µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1360 190 40 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -6.5 -26 -5.0 400 3.4 Test Conditions A V ns µC Tj = 25°C, IS = -6.5A, VGS = 0V ➃ Tj = 25°C, IF = -6.5A, di/dt ≥ 100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHY9230CM, JANSR2N7383 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-257AA) Diode Forward Voltage ➃ Min Test Conditions Units 300K Rads (Si)2 Max Max -200 -2.0 — — — — — -4.0 -100 100 - 25 0.804 -200 -2.0 — — — — — -5.0 -100 100 -25 0.804 — 0.8 — 0.8 — -5.0 — -5.0 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-4.1A Ω VGS = -12V, ID = -4.1A V nA V VGS = 0V, IS = -6.5A 1. Part number IRHY9230CM 2. Part number IRHY93230CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V 43.0 -200 -200 -200 39.0 -200 -200 -125 Energy (MeV) 285 305 @VGS=15V -200 -75 @VGS=20V — — -250 VDS -200 -150 Cu Br -100 -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY9230CM, JANSR2N7383 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 20µs PULSE WIDTH T = 25 C 1 10 -5.0V 10 1 2.5 TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 9.0 10.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C 8.0 10 100 Fig 2. Typical Output Characteristics 100 7.0 ° -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 J 1 100 -VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 1 1 5.0 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -6.5A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2000 Ciss 1500 1000 C oss 500 C rss 20 -VGS , Gate-to-Source Voltage (V) 2500 C, Capacitance (pF) IRHY9230CM, JANSR2N7383 0 1 10 ID = -6.5A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 10 -VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-160V VDS =-100V VDS =-40V 10 TJ = 150 ° C TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 100us 10 1ms 10ms 1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHY9230CM, JANSR2N7383 Pre-Irradiation RD V DS 8.0 -ID , Drain Current (A) VGS D.U.T. RG 6.0 + V DD -12V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation L VDS D .U .T. RG VD D IA S -20V -12V A D R IV E R 0.01 Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) IRHY9230CM, JANSR2N7383 400 ID -2.9A -4.1A BOTTOM -6.5A TOP 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -12 V QGS QGD D.U.T. VGS VG -3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com +VDS ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHY9230CM, JANSR2N7383 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature. ➁ VDD =-50V, starting TJ = 25°C, L= 11mH, Peak IL=- 6.5A, VGS = -12V ➂ ISD ≤ - 6.5A, di/dt ≤ 375A/µs, VDD ≤ - 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com