ETC JANSF2N7383

PD-91401
IRHY9230CM
JANSR2N7383
200V, P-CHANNEL
REF: MIL-PRF-19500/615
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
™
®
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY9230CM 100K Rads (Si)
IRHY93230CM 300K Rads (Si)
RDS(on)
0.8Ω
0.8Ω
ID
QPL Part Number
-6.5A JANSR2N7383
-6.5A JANSF2N7383
TO-257AA
TM
HEXFET®
International Rectifier’s RAD-Hard
MOSFET technology provides high performance
power MOSFETs for space applications. This technology has over a decade of proven performance
and reliability in satellite applications. These devices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-6.5
-4.1
-26
75
0.6
±20
165
-6.5
7.5
-27
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
C
g
For footnotes refer to the last page
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1
12/05/00
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
V
-0.27
—
V/°C
—
0.8
Ω
—
—
—
—
-4.0
—
-25
-250
V
S( )
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
10
25
30
50
75
65
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -4.1A ➃
nC
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -4.1A ➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -6.5A
VDS = -100V
ns
VDD = -100V, ID = -6.5A
RG = 7.5Ω
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
2.0
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1360
190
40
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -6.5A, VGS = 0V ➃
Tj = 25°C, IF = -6.5A, di/dt ≥ 100A/µs
VDD ≤ -25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY9230CM, JANSR2N7383
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-257AA)
Diode Forward Voltage ➃
Min
Test Conditions
Units
300K Rads (Si)2
Max
Max
-200
-2.0
—
—
—
—
—
-4.0
-100
100
- 25
0.804
-200
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.804
—
0.8
—
0.8
—
-5.0
—
-5.0
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -160V, VGS =0V
VGS = -12V, ID =-4.1A
Ω
VGS = -12V, ID = -4.1A
V
nA
V
VGS = 0V, IS = -6.5A
1. Part number IRHY9230CM
2. Part number IRHY93230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2))
28.0
36.8
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V
43.0
-200
-200
-200
39.0
-200
-200
-125
Energy
(MeV)
285
305
@VGS=15V
-200
-75
@VGS=20V
—
—
-250
VDS
-200
-150
Cu
Br
-100
-50
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY9230CM, JANSR2N7383
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
-5.0V
20µs PULSE WIDTH
T = 25 C
1
10
-5.0V
10
1
2.5
TJ = 150 ° C
V DS = -50V
20µs PULSE WIDTH
9.0
10.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
8.0
10
100
Fig 2. Typical Output Characteristics
100
7.0
°
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
J
1
100
-VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
T = 150 C
°
J
1
1
5.0
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -6.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2000
Ciss
1500
1000
C
oss
500
C rss
20
-VGS , Gate-to-Source Voltage (V)
2500
C, Capacitance (pF)
IRHY9230CM, JANSR2N7383
0
1
10
ID = -6.5A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-160V
VDS =-100V
VDS =-40V
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5.0
100us
10
1ms
10ms
1
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY9230CM, JANSR2N7383
Pre-Irradiation
RD
V DS
8.0
-ID , Drain Current (A)
VGS
D.U.T.
RG
6.0
+
V DD
-12V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
L
VDS
D .U .T.
RG
VD D
IA S
-20V
-12V
A
D R IV E R
0.01 Ω
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRHY9230CM, JANSR2N7383
400
ID
-2.9A
-4.1A
BOTTOM -6.5A
TOP
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
-12V
12V
.2µF
.3µF
-12 V
QGS
QGD
D.U.T.
VGS
VG
-3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
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+VDS
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
➄ Total Dose Irradiation with VGS Bias.
maximum junction temperature.
➁ VDD =-50V, starting TJ = 25°C, L= 11mH,
Peak IL=- 6.5A, VGS = -12V
➂ ISD ≤ - 6.5A, di/dt ≤ 375A/µs,
VDD ≤ - 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
➅ Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 12/00
8
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