Data Sheet Shottky barrier diode RB876W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 1.6± 0.2 0.3±0.1 0.05 Features 1) Ultra small mold type. (EMD3) 2) Low Ct and high detection efficiency. 0.15±0.05 0.7 0.1Min 0.6 0.6 EMD3 0.55±0.1 0.5 0.5 1.0±0.1 Construction Silicon epitaxial planar 0.7 0～0.1 (1) (2) 0.2±0.1 -0.05 1.6±0.2 0.8±0.1 (3) 1.3 Applications High frequency detection 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage Average rectified forward current (*1) Junction temperature Storage temperature Limits Symbol VR Io Tj Tstg Unit V mA °C °C 5 10 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF IR Min. Typ. Max. Unit - - 0.35 120 V μA Ct - 0.53 0.80 pF 1/2 Conditions IF=1mA VR=5V VR=1V, f=1MHz 2011.04 - Rev.B Data Sheet RB876W 10 1 1000 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ Ta=125℃ 100 10 Ta=-25℃ 0.1 1 300 600 900 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1500 0 300 1 2 3 4 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 5 REVERSE CURRENT:IR(uA) 290 280 270 260 Ta=25℃ VR=5V n=30pcs 250 200 150 100 AVE:21.63uA 50 VF DISPERSION MAP IR DISPERSION MAP IF=10mA time ELECTROSTATIC DDISCHARGE TEST ESD(KV) Rth(j-c) Mounted on epoxy board 1ms 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.520pF 0.2 Ct DISPERSION MAP 5 Rth(j-a) IM=1mA Ta=25℃ f=1MHz VR=1V n=10pcs 0.9 0 0 250 100 5 0.1 AVE:275.2mV 1000 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 300 Ta=25℃ IF=1mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) Ta=75℃ Ta=25℃ 0.01 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) f=1MHz Ta=125℃ 4 3 AVE:1.47kV 2 AVE:0.48kV 1 300us 10 0.001 0 0.01 0.1 TIME:t(s) 1 10 100 Rth-t CHARACTERISTICS 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/2 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A