BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability • SIEGET 25 GHz fT - Line • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP420 Marking AMs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 °C 4.5 TA ≤ 0 °C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 3 Total power dissipation2) Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 107 °C 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 2009-12-02 1 BFP420 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 260 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 3 µA hFE 60 95 130 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 4 V, pulse measured 1For calculation of RthJA please refer to Application Note Thermal Resistance 2009-12-02 2 BFP420 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 18 25 - GHz Ccb - 0.15 0.3 Cce - 0.37 - Ceb - 0.55 - F - 1.1 - dB G ms - 21 - dB 14 17 - IP 3 - 22 - P-1dB - 12 - IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21| 2 Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output2) dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G ms = |S21 / S12| value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 2IP3 2009-12-02 3 BFP420 Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 10 GHz using typical devices. The BFP420 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. 2009-12-02 4 BFP420 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 200 mW 160 K/W RthJS Ptot 140 120 10 2 100 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 80 60 40 20 0 0 20 40 60 80 100 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/P totDC = ƒ(tp) f = 1MHz 10 1 0.3 Ccb Ptotmax /PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 1 2 V 4 VCB 2009-12-02 5 0 BFP420 Transition frequency fT= ƒ(IC) Power gain Gma, Gms , |S 21|² = ƒ (f) f = 2 GHz VCE = 2 V, I C = 20 mA VCE = parameter in V 30 GHz 44 2 to 4 40 1.5 24 1 36 0.75 32 22 fT 20 Gms 18 28 G [dB] 16 14 20 0.5 12 24 G ma 10 16 |S |2 8 21 12 6 8 4 2 4 0 0 5 10 15 20 25 30 mA 40 0 0 IC 1 2 3 4 5 6 f [GHz] Power gain Gma, Gms = ƒ (I C) VCE = 2V Power gain Gma, Gms = ƒ (VCE) f = parameter in GHz f = parameter in GHz IC = 20 mA 30 dB 30 dB 0.9 0.9 24 24 22 22 1.8 20 18 2.4 16 3 14 G G 20 4 12 5 10 6 16 3 14 4 12 5 10 6 8 6 6 4 4 2 2 4 8 12 16 20 24 28 32 mA 0 0 40 IC 2.4 18 8 0 0 1.8 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 2009-12-02 6 BFP420 Noise figure F = ƒ(IC ) Noise figure F = ƒ(I C) VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz 4 3 dB dB 3 F F 2 2.5 2 1.5 ZS = 50 Ohm ZS = ZSopt 1.5 1 0.5 0 0 1 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 4 8 12 16 20 24 28 0.5 0 0 32 mA 38 4 8 12 16 20 28 mA 24 IC 36 IC Noise figure F = ƒ(f) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. frequency VCE = 2 V, I C = 5 mA / 20 mA 3 +j50 dB +j25 +j100 +j10 2 F 2.4GHz 1.8GHz 0.9GHz 3GHz 0 1.5 10 25 50 100 0.45GHz 4GHz 1 5GHz IC = 20 mA IC = 5 mA -j10 6GHz 0.5 -j25 -j100 -j50 0 0 1 2 3 4 GHz 6 f 2009-12-02 7 Package SOT343 BFP420 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2009-12-02 8 BFP420 Edition 2009-12-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2009-12-02 9