EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. EMB3 1.6 0.5 1.0 0.5 0.5 (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 Each lead has same dimensions Abbreviated symbol : B3 ROHM : EMT6 zStructure Dual PNP digital transistor (each with single built in resistor) 0.13 UMB3N 2.0 0.9 1.3 The following characteristics apply to both DTr1 and DTr2. 0.65 0.65 0.7 (5) (4) 1.25 2.1 (6) 1pin mark (3) (1) (2) 0.2 EMB3, UMB3N (3) (2) R1 (4) (5) R1 (1) DTr1 DTr2 (6) R1 (5) (6) (3) R1 (2) Each lead has same dimensions Abbreviated symbol : B3 ROHM : UMT6 EIAJ : SC-88 DTr1 DTr2 (4) 0.15 IMB3A 0.1Min. zEquivalent circuit IMB3A (1) 2.9 1.1 1.9 0.8 0.95 0.95 (4) (5) (6) (3) (2) (1) 1.6 zPackaging specifications Package Type Taping Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 − − EMB3 UMB3N − IMB3N − − − 1pin mark 0.3 ROHM : SMT6 EIAJ : SC-74 0.15 0.3Min. R1=4.7kΩ 2.8 R1=4.7kΩ Each lead has same dimensions Abbreviated symbol : B3 Rev.B 1/2 EMB3 / UMB3N / IMB3A Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current Collector power dissipation EMB3,UMB3N 150 (TOTAL) PC IMB3A mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA Collector cutoff current ICBO − − −0.5 µA VCB=−50V Emitter cutoff current IEBO − − −0.5 µA VEB=−4V Collector-emitter saturation voltage DC current transfer ratio Conditions IC=−50µA VCE (sat) − − −0.3 V IC/IB=−5mA/−2.5mA hFE 100 250 600 − VCE=−5V, IC=−1mA Transition frequency fT − 250 − MHz Input resistance R1 3.29 4.7 6.11 kΩ VCE=10mA, IE=−5mA, f=100MHz ∗ − ∗ Transition frequency of the device 1k VCE=−5V DC CURRENT GAIN : hFE 500 50 −1 −500m −200m 200 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves −100m Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m lC/lB=20 Ta=100°C 25°C −40°C −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1