EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (3) 0.22 (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 EMX18 Each lead has same dimensions ROHM : EMT6 zEquivalent circuit 0~0.1 2.0 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 EMX18 / UMX18N (2) 0.7 0.15 0.1Min. 0.9 2.1 The following characteristics apply to both Tr1 and Tr2. (3) 1.3 (3) (2) (1) 1.25 0.65 (5) (6) 0.2 (4) UMX18N 0.65 Abbreviated symbol : X18 zStructure Epitaxial planar type NPN silicon transistor Abbreviated symbol : X18 (1) Tr1 Tr2 (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Parameter Collector current Power dissipation IC 500 mA ICP 1.0 A Pd 150 (TOTAL) mW Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C ∗1 ∗1 120mW per element must not be exceeded. Rev.A 1/3 EMX18 / UMX18N Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 0.1 µA VCB=15V Emitter cutoff current IEBO − − 0.1 µA VEB=6V VCE (sat) − 90 250 mV IC/IB=200mA/10mA hFE 270 − 680 − VCE=2V, IC=10mA fT − 320 − MHz VCE=2V, IE=−10mA, f=100MHz Cob − 7.5 − PF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance VCB=10V, IE=0A, f=1MHz zPackaging specifications Package Type Taping Code T2R TN Basic ordering unit (pieces) 8000 3000 EMX18 UMX18N 1000 VCE = 2V DC CURRENT GAIN : hFE 500 200 100 10 -40°C 25°C 20 25°C 50 5 -40°C 100 50 20 10 5 2 1 1 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 25°C 200 2 0 VCE = 2V Ta = 125°C 500 Ta = 1 COLLECTOR CURRENT : IC (mA) 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectrical characteristic curves 1000 IC/IB = 20 500 200 100 50 Ta = 125°C 25°C 20 -40°C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.A 2/3 EMX18 / UMX18N Ta = 25°C 500 200 100 50 20 IC/IB = 50 10 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 IC/IB = 20 5000 500 VCE = 2V Ta = 25°C 200 Pulsed Ta = -40°C 25°C 125°C 2000 100 1000 500 200 50 20 100 10 50 5 20 2 10 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 10000 fT (MHZ) 1000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors Fig.5 Base-emitter saturation voltage vs. collector current 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage IE = 0A f = 1MHz Ta = 25°C 500 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1