DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. PINNING - SOT428 BTA204S series D, E and F BTA204M series D, E and F QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. BTA204S (or BTA204M)- 500D BTA204S (or BTA204M)- 500E BTA204S (or BTA204M)- 500F Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current PIN CONFIGURATION PIN Standard Alternative NUMBER S M 1 MT1 gate 2 MT2 MT2 3 gate MT1 tab MT2 MT2 MAX. UNIT 600D 600E 600F 600 800E 800F 800 V 4 25 4 25 A A SYMBOL tab T2 T1 2 1 G 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current 2 It dIT/dt IGM VGM PGM PG(AV) Tstg Tj 2 I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 4 A - 25 27 3.1 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. December 1998 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA204S series D, E and F BTA204M series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient - 75 3.0 3.7 - K/W K/W K/W Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. BTA204S (or BTA204M)2 IGT Gate trigger current IL Latching current IH VT VGT ID MAX. UNIT ...D ...E ...F - - 5 5 5 10 10 10 25 25 25 mA mA mA Holding current VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A - - 6 9 6 6 12 18 12 12 20 30 20 20 mA mA mA mA On-state voltage Gate trigger voltage IT = 5 A VD = 12 V; IT = 0.1 A - 1.4 0.7 1.7 1.5 V V 0.25 0.4 - V - 0.1 0.5 mA MIN. TYP. MAX. UNIT Off-state leakage current VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage CONDITIONS BTA204S (or BTA204M)- dIcom/dt dIcom/dt tgt ...D ...E ...F VDM = 67% VDRM(max); 20 Tj = 125 ˚C; exponential waveform; gate open circuit Critical rate of change VDM = 400 V; Tj = 125 ˚C; 1.0 of commutating current IT(RMS) = 4 A; dVcom/dt = 20V/µs; gate open circuit Critical rate of change VDM = 400 V; Tj = 125 ˚C; 5.0 of commutating current IT(RMS) = 4 A; dVcom/dt = 0.1V/µs; gate open circuit Gate controlled turn-on ITM = 12 A; VD = VDRM(max); time IG = 0.1 A; dIG/dt = 5 A/µs 30 50 - - V/µs 2.0 2.5 - - A/ms - - - - A/ms - - 2 - µs 2 Device does not trigger in the T2-, G+ quadrant. December 1998 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation 8 BT136 Ptot / W BTA204S series D, E and F BTA204M series D, E and F Tmb(max) / C 5 101 IT(RMS) / A BT136 104 7 6 = 180 1 107 C 4 107 120 5 110 90 60 4 3 113 30 3 116 2 119 1 122 2 1 0 0 1 2 3 IT(RMS) / A 125 5 4 0 -50 BT136 ITSM / A 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 12 BT136 IT(RMS) / A ITSM IT 10 T time 8 Tj initial = 25 C max 100 6 dIT /dt limit 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 30 ITSM / A BT136 T Tj initial = 25 C max 1.2 1 10 0.8 5 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. December 1998 BT136 1.4 time 15 0 VGT(Tj) VGT(25 C) I TSM IT 20 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. 1.6 25 0.1 1 surge duration / s 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 4 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation 3 IGT(Tj) IGT(25 C) BTA204S series D, E and F BTA204M series D, E and F 12 BTA204 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- G- 2.5 typ 10 max Vo = 1.27 V Rs = 0.091 ohms 8 2 1.5 6 1 4 0.5 2 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 BT136 IT / A IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC BT136 Zth j-mb (K/W) unidirectional 2.5 bidirectional 1 2 1.5 0.1 1 P D tp 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 3 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. IH(Tj) IH(25C) 0.1ms Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. TRIAC 2.5 2 1.5 1 0.5 0 -50 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. December 1998 5 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA204S series D, E and F BTA204M series D, E and F MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.12. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.13. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". December 1998 6 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA204S series D, E and F BTA204M series D, E and F DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. 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