DISCRETE SEMICONDUCTORS DATA SHEET BTA225 series B Three quadrant triacs high commutation Product specification September 1997 Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur loads. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - TO220AB PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate BTA225 series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BTA225Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION 500B 500 600B 600 800B 800 V 25 190 25 190 25 190 A A SYMBOL tab T2 tab T1 G 1 23 main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current 2 It dIT/dt IGM VGM PGM PG(AV) Tstg Tj 2 I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MAX. UNIT -500 -600 -800 6001 6001 800 V - 25 A - 190 209 180 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 2 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA225 series B THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.0 1.4 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 31 34 30 31 1.3 0.7 0.4 0.1 60 90 60 60 1.55 1.5 0.5 mA mA mA mA V V V mA STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS 2 IGT Gate trigger current IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A; without snubber; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 1000 4000 - V/µs - 44 - A/ms - 2 - µs dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. September 1997 3 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation 40 BTA225 series B BTA140 Ptot / W Tmb(max) / C 30 85 = 180 30 IT(RMS) / A BTA140 91 C 25 95 1 120 90 20 60 20 105 30 15 10 115 10 5 0 0 5 10 15 IT(RMS) / A 20 125 30 25 0 -50 BTA225 ITSM / A 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 50 BTA140 IT(RMS) / A 40 dI T /dt limit 30 100 20 I TSM IT T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 200 ITSM / A 1.6 ITSM T 150 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 91˚C. BTA140 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 100 1 0.8 50 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. September 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 4 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation 3 IGT(Tj) IGT(25 C) BTA225 series B 80 BTA216 T2+ G+ T2+ GT2- G- 2.5 BTA140 IT / A Tj = 125 C Tj = 25 C 70 typ 60 Vo = 1.073 V max Rs = 0.015 ohms 2 50 40 1.5 30 1 20 0.5 10 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC 2.5 BTA140 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 IH(Tj) IH(25C) 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. 1000 TRIAC dIcom/dt (A/ms) BTA225 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. September 1997 40 60 80 Tj / C 100 120 140 Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. 5 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA225 series B MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA225 series B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135002/1160/02/pp8 Date of release: September 1997 Document order number: 9397 750 06624