BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor FEATURES PINNING • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. PIN DESCRIPTION 3 BFG540 (Fig.1) Code: %MG 1 collector 2 base 3 emitter 4 emitter DESCRIPTION BFG540/X (Fig.1) Code: %MM NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. 1 collector 2 emitter 3 base 4 emitter The transistors are mounted in plastic SOT143B and SOT143R packages. handbook, 2 columns 4 1 Top view 2 MSB014 Fig.1 SOT143B. handbook, 2 columns 3 4 BFG540/XR (Fig.2) Code: %MR 1 collector 2 emitter 3 base 4 emitter Rev. 05 - 21 November 2007 2 Top view 1 MSB035 Fig.2 SOT143R. 2 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC DC collector current − − 120 mA mW Ptot total power dissipation Ts ≤ 60 °C; note 1 − − 400 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 18 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 11 − dB insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 2.1 − dB s 21 2 F LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 05 - 21 November 2007 3 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 8 V − − 50 hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 18 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 11 − dB insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 2.1 − dB s 21 2 F nA pF PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 21 − dBm ITO third order intercept point note 2 − 34 − dBm VO output voltage note 3 − 500 − mV d2 second order intermodulation distortion note 4 − −50 − dB Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C; Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. Rev. 05 - 21 November 2007 4 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MBG249 600 MRA749 250 handbook, halfpage handbook, halfpage hFE Ptot (mW) 200 400 150 100 200 50 0 0 50 100 150 200 0 10−2 10−1 1 10 Ts ( o C) IC (mA) 102 VCE = 8 V; Tj = 25 °C. VCE ≤ 10 V. Fig.4 Fig.3 Power derating curve. MRA750 1 DC current gain as a function of collector current. MRA751 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8 V 8 VCE = 4 V 0.6 0.4 4 0.2 0 0 4 8 VCB (V) 12 0 10−1 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.5 Fig.6 Feedback capacitance as a function of collector-base voltage. Rev. 05 - 21 November 2007 1 10 IC (mA) 102 Transition frequency as a function of collector current. 5 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MRA752 25 MRA753 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG 20 20 Gmax GUM 15 15 Gmax 10 10 5 5 0 0 20 40 IC (mA) 60 VCE = 8 V; f = 900 MHz. MSG = maximum stable gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. Fig.7 Gain as a function of collector current. GUM 0 0 20 40 IC (mA) 60 VCE = 8 V; f = 2 GHz. Gmax = maximum available gain; GUM = maximum unilateral power gain. Fig.8 Gain as a function of collector current. MRA755 MRA754 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM GUM 40 40 MSG MSG 30 30 20 20 Gmax Gmax 10 0 10 102 103 f (MHz) 10 104 IC = 10 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.9 Gain as a function of frequency. 0 10 102 103 f (MHz) 104 IC = 40 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.10 Gain as a function of frequency. Rev. 05 - 21 November 2007 6 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MEA973 −20 dim MEA972 −20 d2 handbook, halfpage handbook, halfpage (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 20 30 40 50 −70 10 60 IC (mA) Fig.11 Intermodulation distortion as a function of collector current. MRA760 5 handbook, halfpage Fmin f = 900 MHz (dB) 4 1000 MHz Gass 3 2000 MHz 20 30 40 50 60 IC (mA) Fig.12 Second order intermodulation distortion as a function of collector current. MRA761 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 10 mA 40 mA 20 Gass (dB) 15 Gass 10 3 10 5 2 5 2000 MHz 2 1000 MHz 900 MHz 500 MHz 1 Fmin 40 mA 0 0 1 10 IC (mA) −5 102 1 10 mA 0 102 Fmin 0 103 f (MHz) −5 104 VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure and associated available gain as functions of collector current. Fig.14 Minimum noise figure and associated available gain as functions of frequency. Rev. 05 - 21 November 2007 7 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 180° 0.2 0 OPT 1 0.5 0.2 2 5 0° F = 1.5 dB F = 2 dB 0.2 0.4 5 Fmin = 1.3 dB 0 5 F = 3 dB 0.5 −135° 2 −45° 1 MRA762 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz. Fig.15 Noise circle figure. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 G = 8 dB G = 9 dB Gmax = 11.4 dB G = 10 dB 0.4 5 MS 0.2 180° 0.2 0 0.5 1 2 5 0° 0 OPT Fmin = 2.1 dB 0.2 5 F = 2.5 dB F = 3 dB F = 4 dB −135° 0.5 2 −45° 1 MRA763 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz. Fig.16 Noise circle figure. Rev. 05 - 21 November 2007 8 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 5 0.2 40 MHz 0.5 −135° 2 −45° 1 MRA756 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (s11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA757 IC = 40 mA; VCE = 8 V. Fig.18 Common emitter forward transmission coefficient (s21). Rev. 05 - 21 November 2007 9 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.25 0.20 0.15 0.10 0° 0.05 −135° −45° −90° MRA758 IC = 40 mA; VCE = 8 V. Fig.19 Common emitter reverse transmission coefficient (s12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz 40 MHz 0.2 −135° 0.5 2 5 −45° 1 MRA759 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (s22). Rev. 05 - 21 November 2007 10 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 05 - 21 November 2007 11 of 14 NXP Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION SOT143R REFERENCES IEC JEDEC EIAJ SC-61B Rev. 05 - 21 November 2007 EUROPEAN PROJECTION ISSUE DATE 97-03-10 99-09-13 12 of 14 NXP Semiconductors BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 05 - 21 November 2007 13 of 14 BFG540; BFG540/X; BFG540/XR NXP Semiconductors NPN 9 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG540_X_XR_N_5 20071121 Product data sheet - BFG540_X_XR_4 • Modifications: Pinning table on page 2; changed code BFG540_X_XR_4 (9397 750 07059) 20000523 Product specification - BFG540XR_3 BFG540XR_3 (9397 750 03144) 19950901 Product specification - BFG540XR_2 BFG540XR_2 - Product specification - BFG540XR_1 BFG540XR_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 November 2007 Document identifier: BFG540_X_XR_N_5