PHILIPS BFY50

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 35 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General purpose industrial applications.
DESCRIPTION
1
handbook, halfpage
3
2
NPN medium power transistor in a TO-39 metal package.
2
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
MAX.
UNIT
open emitter
−
80
V
BFY51
−
−
60
V
BFY52
−
−
40
V
BFY50
−
−
35
V
BFY51
−
−
30
V
BFY52
−
−
20
V
collector-emitter voltage
open base
−
−
1
A
Tamb ≤ 25 °C
−
−
800
mW
Tcase ≤ 100 °C
−
−
2.86
W
BFY50
30
112
−
BFY51
40
123
−
60
142
−
BFY50
60
−
−
MHz
BFY51; BFY52
50
−
−
MHz
peak collector current
total power dissipation
DC current gain
IC = 150 mA; VCE = 10 V
BFY52
1997 Apr 22
TYP.
−
Ptot
fT
MIN.
BFY50
ICM
hFE
CONDITIONS
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
2
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BFY50
−
80
V
BFY51
−
60
V
−
40
V
BFY50
−
35
V
BFY51
−
30
V
−
20
V
−
6
V
BFY52
VCEO
MIN.
collector-emitter voltage
open base
BFY52
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
800
mW
Tamb ≤ 25 °C
Tcase ≤ 25 °C
−
5
W
25 °C < Tcase < 100 °C
−
2.86
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
220
K/W
Rth j-c
thermal resistance from junction to case
35
K/W
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
hFE
emitter cut-off current
−
50
nA
−
−
2.5
µA
IE = 0; VCB = 80 V
−
−
500
nA
IE = 0; VCB = 80 V; Tj = 100 °C
−
−
30
µA
IE = 0; VCB = 40 V
−
−
50
nA
IE = 0; VCB = 40 V; Tj = 100 °C
−
−
2.5
µA
IE = 0; VCB = 60 V
−
−
500
nA
IE = 0; VCB = 60 V; Tj = 100 °C
−
−
30
µA
IE = 0; VCB = 30 V
−
−
50
nA
IE = 0; VCB = 30 V; Tj = 100 °C
−
−
2.5
µA
IE = 0; VCB = 40 V
−
−
500
nA
IE = 0; VCB = 40 V; Tj = 100 °C
−
−
30
µA
IC = 0; VEB = 5 V
−
−
50
nA
IC = 0; VEB = 5 V; Tj = 100 °C
−
−
2.5
µA
IC = 0; VEB = 6 V
−
−
500
nA
IC = 10 mA; VCE = 10 V
20
−
−
IC = 150 mA; VCE = 10 V
30
−
−
IC = 500 mA; VCE = 10 V
20
−
−
IC = 1 A; VCE = 10 V
15
−
−
IC = 10 mA; VCE = 10 V
30
−
−
IC = 150 mA; VCE = 10 V
40
−
−
IC = 500 mA; VCE = 10 V
25
−
−
IC = 1 A; VCE = 10 V
15
−
−
IC = 10 mA; VCE = 10 V
30
−
−
IC = 150 mA; VCE = 10 V
60
−
−
IC = 500 mA; VCE = 10 V
30
−
−
IC = 1 A; VCE = 10 V
15
−
−
DC current gain
BFY52
1997 Apr 22
−
IE = 0; VCB = 60 V; Tj = 100 °C
DC current gain
BFY51
hFE
UNIT
IE = 0; VCB = 60 V
DC current gain
BFY50
hFE
MAX.
collector cut-off current
BFY52
IEBO
TYP.
collector cut-off current
BFY51
ICBO
MIN.
collector cut-off current
BFY50
ICBO
CONDITIONS
4
Philips Semiconductors
Product specification
NPN medium power transistors
SYMBOL
VCEsat
PARAMETER
MIN.
TYP.
MAX.
UNIT
IC = 10 mA; IB = 1 mA
−
−
200
mV
IC = 150 mA; IB = 15 mA
−
−
200
mV
IC = 500 mA; IB = 50 mA
−
−
700
mV
IC = 1 A; IB = 100 mA
−
−
1
V
IC = 10 mA; IB = 1 mA
−
−
200
mV
IC = 150 mA; IB = 15 mA
−
−
350
mV
IC = 500 mA; IB = 50 mA
−
−
1
V
IC = 1 A; IB = 100 mA
−
−
1.6
V
IC = 10 mA; IB = 1 mA
−
−
1.2
V
collector-emitter saturation voltage
BFY51; BFY52
VBEsat
CONDITIONS
collector-emitter saturation voltage
BFY50
VCEsat
BFY50; BFY51; BFY52
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
−
−
1.3
V
IC = 500 mA; IB = 50 mA
−
−
1.5
V
IC = 1 A; IB = 100 mA
−
−
2
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
7
12
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C
60
140
−
MHz
50
−
−
MHz
−
55
−
ns
BFY50
BFY51; BFY52
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
td
delay time
−
15
−
ns
tr
rise time
−
40
−
ns
toff
turn-off time
−
360
−
ns
ts
storage time
−
300
−
ns
tf
fall time
−
60
−
ns
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Apr 22
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
6
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number:
9397 750 02081