Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR7025WT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 20 V / 25 V a2 3 a1 1 IO(AV) = 70 A VF ≤ 0.46 V k 2 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR7025WT series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN SOT429 (TO247) DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 116 ˚C - IO(AV) Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Tmb ≤ 114 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 114 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature - 70 A - 70 A - 500 550 A A - 2 A - 2 A -65 - 150 150 ˚C ˚C IFRM IFSM IRRM IRSM Tstg Tj CONDITIONS MIN. MAX. -20 20 20 20 UNIT -25 25 25 25 V V V THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes in free air Rth j-a December 1998 1 MIN. TYP. MAX. UNIT - 45 0.9 0.65 - K/W K/W K/W Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR7025WT series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) Cd Junction capacitance (per diode) IF = 35 A; Tj = 125˚C IF = 70 A; Tj = 125˚C IF = 70 A VR = VRRM VR = VRRM; Tj = 100 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C December 1998 2 MIN. TYP. MAX. UNIT - 0.40 0.52 0.58 0.8 40 2100 0.46 0.54 0.64 15 120 - V V V mA mA pF Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR7025WT series Forward dissipation, PF (W) Tmb(max) (C) 25 PBYR7025WT 0.5 20 132 Tj =125C 0.2 136.5 0.1 10 10 Tj =100C Tj =75C 141 D = tp/T tp PBYR7025WT 100 D = 1.0 15 Reverse Current, IR (mA) 1000 127.5 5 1 145.5 Tj =50C 0.1 Tj =25C T 150 0 0 10 20 30 40 Average forward current, IF(AV) (A) 0.01 50 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Forward dissipation, PF (W) 18 16 133.8 a = 1.57 2.2 14 141 8 142.8 6 144.6 4 146.4 2 148.2 0 150 10 15 20 25 30 Average forward current, IF(AV) (A) 1000 100 35 1 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Forward Current, IF (A) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 PBYR7025WT Cd / pF 10000 139.2 4 5 30 135.6 10 0 25 137.4 2.8 12 10 15 20 Reverse Voltage, VR (V) Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Tmb(max) (C) 1.9 PBYR7025WT 5 10 VR / V 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 150 ˚C. PBYR7025WT Tj = 125 C 10 Transient Thermal Impedance, Zth j-mb (K/W) PBYR7025WT Tj = 25 C typ max 1 Single pulse 0.1 PD tp 0.01 t 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 1E-06 0.8 Forward Voltage, VF (V) Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj December 1998 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR7025WT series MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR7025WT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 5 Rev 1.000