DISCRETE SEMICONDUCTORS DATA SHEET BFQ231; BFQ231A NPN video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT54 (TO-92) plastic package. PNP complements: BFQ251 and BFQ251A. • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. 1 page 2 3 MSB033 PINNING PIN DESCRIPTION APPLICATIONS 1 base • Buffer/driver in high-resolution colour graphics monitors. 2 collector 3 emitter Fig.1 Simplified outline (SOT54; TO-92). QUICK REFERENCE DATA SYMBOL VCBO VCER PARAMETER collector-base voltage CONDITIONS MIN. TYP. MAX. UNIT open emitter BFQ231 − − 100 V BFQ231A − − 115 V collector-emitter voltage RBE = 100 Ω BFQ231 − − 95 V BFQ231A − − 110 V − − 300 mA W IC collector current (DC) Ptot total power dissipation Ts ≤ 65 °C; note 1 − − 1 hFE DC current gain IC = 50 mA; VCE = 10 V 20 35 − fT transition frequency IC = 50 mA; VCE = 10 V; Tamb = 25 °C BFQ231 1 1.4 − GHz BFQ231A 0.8 1.2 − GHz Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BFQ231 − 100 V BFQ231A − 115 V BFQ231 − 65 V BFQ231A − 95 V BFQ231 − 95 V BFQ231A − 110 V − 3 V collector-emitter voltage collector-emitter voltage VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature Tj junction temperature open base RBE = 100 Ω open collector − 300 mA 1 W −65 +150 °C − 150 °C Ts ≤ 65 °C; notes 1 and 2; see Fig.3 − Notes 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT 85 K/W Rth j-s thermal resistance from junction to soldering point note 1 Rth j-a thermal resistance from junction to ambient 185 K/W Rth s-a thermal resistance from soldering point to ambient 100 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 3 Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER PARAMETER CONDITIONS collector-base breakdown voltage MIN. TYP. MAX. UNIT IC = 0.1 mA; IE = 0 BFQ231 100 − − V BFQ231A 115 − − V BFQ231 65 − − V BFQ231A 95 − − V BFQ231 95 − − V BFQ231A 110 − − V IE = 0.1 mA; IC = 0 3 − − V collector-emitter breakdown voltage IC = 10 mA; IB = 0 collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω V(BR)EBO emitter-base breakdown voltage ICES collector-emitter cut-off current IB = 0; VCE = 50 V − − 100 µA ICBO collector-base cut-off current IE = 0; VCB = 10 V − − 20 µA hFE DC current gain IC = 50 mA; VCE = 10 V; see Fig.4 20 35 − Ccb collector-base capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz; − see Fig.5 1.8 − pF fT transition frequency IC = 50 mA; VCE = 10 V; see Fig.6 BFQ231 1 1.4 − GHz BFQ231A 0.8 1.2 − GHz MEA225 - 1 MEA228 - 1 400 handbook,1.2 halfpage handbook, halfpage Ptot (W) 1.0 IC (mA) 300 0.8 0.6 200 0.4 100 0.2 0 0 0 20 40 60 80 100 VCEO (V) 0 50 100 150 Ts (oC) Tamb = 25 °C. Fig.2 DC SOAR. 1997 Oct 02 Fig.3 Power derating curve. 4 200 Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A MEA224 MEA227 50 6 handbook, halfpage handbook, halfpage hFE Ccb (pF) 40 4 30 20 2 10 0 0 100 200 IC (mA) 0 300 0 Fig.5 MBB476 BFQ231 fT (GHz) 1.0 BFQ231A 0.5 0 0 50 100 IC (mA) 150 VCE = 10 V; Tamb = 25 °C. Fig.6 1997 Oct 02 30 40 f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current; typical values. handbook,1.5 halfpage 20 VCB (V) VCE = 10 V; Tamb = 25 °C. Fig.4 10 Transition frequency as a function of collector current; typical values. 5 Collector-base capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Oct 02 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN video transistors BFQ231; BFQ231A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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