DISCRETE SEMICONDUCTORS DATA SHEET BFQ151 PNP video transistor Product specification File under Discrete Semiconductors, SC05 1997 Sep 19 Philips Semiconductors Product specification PNP video transistor BFQ151 FEATURES DESCRIPTION • High gain bandwidth PNP video transistor in a SOT54 plastic package. • Good thermal stability • Gold metallization ensures excellent reliability. PINNING PIN APPLICATIONS • Pre-stage driver between video amplifier and video module. 1 page 2 3 DESCRIPTION 1 base 2 collector 3 emitter MSB033 Fig.1 Simplified outline SOT54. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − −20 V − −100 mA − 1.25 W VCBO collector-base voltage IC collector current (DC) Ptot total power dissipation Ts ≤ 60 °C fT transition frequency IC = −70 mA; VCE = −10 V 3.5 − GHz Cre feedback capacitance IC = 0; VCB = −10 V 1.8 − pF Tj junction temperature − 175 °C open emitter LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −3 V IC collector current (DC) − −100 mA Ptot total power dissipation Ts ≤ 60 °C; note 1; see Fig.2 − 1.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Sep 19 2 Philips Semiconductors Product specification PNP video transistor BFQ151 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s VALUE UNIT 90 K/W MAX. UNIT Ts ≤ 60 °C; note 1 Note 1. Ts is the temperature of the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. IC = −0.1 mA; IE = 0 −20 TYP. − − V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = −10 mA; IB = 0 −15 − − V V(BR)EBO emitter-base breakdown voltage IC = 0; IE = −0.1 mA −3 − − V ICBO collector-base leakage current VCB = −10 V; IE = 0 − − −1 µA hFE DC current gain IC = −70 mA; VCE = −10 V; see Fig.3 25 − − fT transition frequency IC = −70 mA; VCE = −10 V; fm = 500 MHz; Tamb = 25 °C; see Fig.5 − 3.5 − GHz Cre feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz; see Fig.4 − 1.8 − pF MBK241 1.6 MBK242 80 handbook, halfpage handbook, halfpage Ptot (W) hFE 1.2 60 0.8 40 0.4 20 0 0 0 100 Ts (oC) 200 V 0 −20 −40 −60 −80 −100 IC (mA) VCE = −10 V; Tamb = 25 °C. Fig.3 Fig.2 Power derating curve. 1997 Sep 19 3 DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification PNP video transistor BFQ151 MBK243 6 MBK244 5 andbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 4 4 3 2 2 1 0 −5 0 −10 −15 VCB (V) 0 −20 0 IC = 0; f = 1 MHz.; Tamb = 25 °C. Fig.4 −40 −60 −80 −100 IC (mA) VCE = −10 V; fm = 500 MHz; Tamb = 25 °C. Feedback capacitance as a function of collector-base voltage; typical values. 1997 Sep 19 −20 Fig.5 4 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification PNP video transistor BFQ151 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Sep 19 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP video transistor BFQ151 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Sep 19 6 Philips Semiconductors Product specification PNP video transistor BFQ151 NOTES 1997 Sep 19 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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