PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 01 — 1 November 2005 Product data sheet 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features ■ ■ ■ ■ ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package ■ ■ ■ ■ Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A 1.3 Applications ■ Computers and peripherals ■ Audio and video equipment ■ Cellular handsets and accessories ■ Communication systems ■ Portable electronics ■ Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF PESD24VL2BT - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2: Pinning Pin Description 1 cathode 1 2 cathode 2 3 double cathode Simplified outline Symbol 3 1 1 2 3 2 006aaa155 3. Ordering information Table 3: Ordering information Type number PESD3V3L2BT Package Name Description Version - plastic surface mounted package; 3 leads SOT23 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4: Marking codes Type number Marking code [1] PESD3V3L2BT V3* PESD5V0L2BT V4* PESD12VL2BT V5* PESD15VL2BT V6* PESD24VL2BT V7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 2 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L2BT - 350 W PESD5V0L2BT - 350 W PESD12VL2BT - 200 W PESD15VL2BT - 200 W - 200 W PESD3V3L2BT - 15 A PESD5V0L2BT - 13 A PESD12VL2BT - 5 A PESD15VL2BT - 5 A PESD24VL2BT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP Parameter Conditions peak pulse power tp = 8/20 µs [1] [2] PESD24VL2BT peak pulse current IPP tp = 8/20 µs [1] [2] [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. Table 6: Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV - 23 kV - 10 kV [1] [2] PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 7: ESD standards compliance ESD Standard Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD883, class 3 > 4 kV 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 3 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa631 001aaa630 120 IPP 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 0 10 20 30 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 9397 750 14034 Product data sheet t 30 ns 40 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 4 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 6. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM VBR Conditions Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V reverse leakage current PESD3V3L2BT VRWM = 3.3 V - 0.09 2 µA PESD5V0L2BT VRWM = 5.0 V - 0.01 1 µA PESD12VL2BT VRWM = 12 V - <1 50 nA PESD15VL2BT VRWM = 15 V - <1 50 nA PESD24VL2BT VRWM = 24 V - <1 50 nA PESD3V3L2BT 5.8 6.4 6.9 V PESD5V0L2BT 7.0 7.6 8.2 V PESD12VL2BT 14.2 15.8 16.7 V PESD15VL2BT 17.1 18.8 20.3 V 25.4 27.8 30.3 V PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF - 11 - pF IPP = 1 A - - 8 V IPP = 15 A - - 26 V IPP = 1 A - - 10 V breakdown voltage IR = 5 mA PESD24VL2BT Cd diode capacitance VR = 0 V; f = 1 MHz PESD24VL2BT VCL [1] [2] clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 13 A - - 28 V IPP = 1 A - - 20 V IPP = 5 A - - 37 V IPP = 1 A - - 25 V IPP = 5 A - - 44 V IPP = 1 A - - 40 V IPP = 3 A - - 70 V 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 5 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 Table 8: Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit rdif differential resistance IR = 1 mA PESD3V3L2BT - - 400 Ω PESD5V0L2BT - - 80 Ω PESD12VL2BT - - 200 Ω PESD15VL2BT - - 225 Ω PESD24VL2BT - - 300 Ω [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 6 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa531 104 001aaa193 1.2 PPP PPP (W) PPP(25 °C) 103 0.8 (1) (2) 102 0.4 10 1 102 10 103 104 0 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values 006aaa067 110 Cd (pF) 100 Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 006aaa068 20 Cd (pF) 16 90 (1) 12 (1) 80 (2) 8 70 (3) (2) 60 4 0 50 0 1 2 3 4 5 0 5 10 Tamb = 25 °C; f = 1 MHz 15 20 25 VR (V) VR (V) Tamb = 25 °C; f = 1 MHz (1) PESD3V3L2BT (1) PESD12VL2BT (2) PESD5V0L2BT (2) PESD15VL2BT (3) PESD24VL2BT Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 7 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 IPP 006aaa069 10 (1) IRM IRM(25°C) −VCL −VBR −VRWM IR IRM −IRM −IR 1 VRWM VBR VCL − 10−1 −100 −50 + −IPP 0 50 100 150 Tj (°C) 006aaa676 (1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: IRM < 20 nA; Tj = 150 °C Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a bidirectional ESD protection diode 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 8 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 ESD TESTER RZ 450 Ω 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T. (Device Under Test) vertical scale = 20 V/div; horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VL2BT GND PESD15VL2BT GND PESD12VL2BT GND PESD5V0L2BT GND GND PESD3V3L2BT GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L2BT GND PESD5V0L2BT GND PESD12VL2BT GND PESD15VL2BT GND PESD24VL2BT vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa162 Fig 9. ESD clamping test setup and waveforms 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 9 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 7. Application information The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8/20 µs waveform. line 1 to be protected line 2 to be protected PESDxL2BT GND 006aaa163 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxL2BT as close to the input terminal or connector as possible. 2. The path length between the PESDxL2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 10 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PESD3V3L2BT Package SOT23 Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT [1] For further information and the availability of packing methods, see Section 15. 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 11 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PESDXL2BT_SER_1 20051101 Product data sheet - 9397 750 14034 - 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 12 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Trademarks 13. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14034 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 1 November 2005 13 of 14 PESDxL2BT series Philips Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 November 2005 Document number: 9397 750 14034 Published in The Netherlands