PHILIPS PESD3V3L2BT

PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 01 — 1 November 2005
Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
■
■
■
■
ESD protection of two lines
Max. peak pulse power: PPP = 350 W
Low clamping voltage: VCL = 26 V
Small SMD plastic package
■
■
■
■
Ultra low leakage current: IRM < 90 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
■ Computers and peripherals
■ Audio and video equipment
■ Cellular handsets and accessories
■ Communication systems
■ Portable electronics
■ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
PESD3V3L2BT
-
101
-
pF
PESD5V0L2BT
-
75
-
pF
PESD12VL2BT
-
19
-
pF
PESD15VL2BT
-
16
-
pF
PESD24VL2BT
-
11
-
pF
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2:
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
double cathode
Simplified outline
Symbol
3
1
1
2
3
2
006aaa155
3. Ordering information
Table 3:
Ordering information
Type number
PESD3V3L2BT
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
4. Marking
Table 4:
Marking codes
Type number
Marking code [1]
PESD3V3L2BT
V3*
PESD5V0L2BT
V4*
PESD12VL2BT
V5*
PESD15VL2BT
V6*
PESD24VL2BT
V7*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
2 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3L2BT
-
350
W
PESD5V0L2BT
-
350
W
PESD12VL2BT
-
200
W
PESD15VL2BT
-
200
W
-
200
W
PESD3V3L2BT
-
15
A
PESD5V0L2BT
-
13
A
PESD12VL2BT
-
5
A
PESD15VL2BT
-
5
A
PESD24VL2BT
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
Parameter
Conditions
peak pulse power
tp = 8/20 µs
[1] [2]
PESD24VL2BT
peak pulse current
IPP
tp = 8/20 µs
[1] [2]
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 6:
Symbol
VESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
30
kV
-
23
kV
-
10
kV
[1] [2]
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDxL2BT series
HBM MIL-STD883
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 7:
ESD standards compliance
ESD Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3
> 4 kV
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
3 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
001aaa630
120
IPP
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
tr = 0.7 ns to 1 ns
0
0
10
20
30
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
9397 750 14034
Product data sheet
t
30 ns
40
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
4 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
IRM
VBR
Conditions
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
reverse leakage current
PESD3V3L2BT
VRWM = 3.3 V
-
0.09
2
µA
PESD5V0L2BT
VRWM = 5.0 V
-
0.01
1
µA
PESD12VL2BT
VRWM = 12 V
-
<1
50
nA
PESD15VL2BT
VRWM = 15 V
-
<1
50
nA
PESD24VL2BT
VRWM = 24 V
-
<1
50
nA
PESD3V3L2BT
5.8
6.4
6.9
V
PESD5V0L2BT
7.0
7.6
8.2
V
PESD12VL2BT
14.2
15.8
16.7
V
PESD15VL2BT
17.1
18.8
20.3
V
25.4
27.8
30.3
V
PESD3V3L2BT
-
101
-
pF
PESD5V0L2BT
-
75
-
pF
PESD12VL2BT
-
19
-
pF
PESD15VL2BT
-
16
-
pF
-
11
-
pF
IPP = 1 A
-
-
8
V
IPP = 15 A
-
-
26
V
IPP = 1 A
-
-
10
V
breakdown voltage
IR = 5 mA
PESD24VL2BT
Cd
diode capacitance
VR = 0 V;
f = 1 MHz
PESD24VL2BT
VCL
[1] [2]
clamping voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
IPP = 13 A
-
-
28
V
IPP = 1 A
-
-
20
V
IPP = 5 A
-
-
37
V
IPP = 1 A
-
-
25
V
IPP = 5 A
-
-
44
V
IPP = 1 A
-
-
40
V
IPP = 3 A
-
-
70
V
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
5 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
Table 8:
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
rdif
differential resistance
IR = 1 mA
PESD3V3L2BT
-
-
400
Ω
PESD5V0L2BT
-
-
80
Ω
PESD12VL2BT
-
-
200
Ω
PESD15VL2BT
-
-
225
Ω
PESD24VL2BT
-
-
300
Ω
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
6 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
006aaa531
104
001aaa193
1.2
PPP
PPP
(W)
PPP(25 °C)
103
0.8
(1)
(2)
102
0.4
10
1
102
10
103
104
0
0
50
100
150
tp (µs)
200
Tj (°C)
Tamb = 25 °C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3. Peak pulse power as a function of exponential
pulse duration tp; typical values
006aaa067
110
Cd
(pF)
100
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
006aaa068
20
Cd
(pF)
16
90
(1)
12
(1)
80
(2)
8
70
(3)
(2)
60
4
0
50
0
1
2
3
4
5
0
5
10
Tamb = 25 °C; f = 1 MHz
15
20
25
VR (V)
VR (V)
Tamb = 25 °C; f = 1 MHz
(1) PESD3V3L2BT
(1) PESD12VL2BT
(2) PESD5V0L2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
7 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
IPP
006aaa069
10
(1)
IRM
IRM(25°C)
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
1
VRWM VBR VCL
−
10−1
−100
−50
+
−IPP
0
50
100
150
Tj (°C)
006aaa676
(1) PESD3V3L2BT, PESD5V0L2BT
PESD12VL2BT, PESD15VL2BT and
PESD24VL2BT: IRM < 20 nA; Tj = 150 °C
Fig 7. Relative variation of reverse leakage current as
a function of junction temperature; typical
values
Fig 8. V-I characteristics for a bidirectional ESD
protection diode
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
8 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
ESD TESTER
RZ
450 Ω
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
(Device
Under
Test)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VL2BT
GND
PESD15VL2BT
GND
PESD12VL2BT
GND
PESD5V0L2BT
GND
GND
PESD3V3L2BT
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
PESD3V3L2BT
GND
PESD5V0L2BT
GND
PESD12VL2BT
GND
PESD15VL2BT
GND
PESD24VL2BT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa162
Fig 9. ESD clamping test setup and waveforms
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
9 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from
the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on
lines where the signal polarities are above and below ground. The PESDxL2BT series
provides a surge capability of up to 350 W per line for an 8/20 µs waveform.
line 1 to be protected
line 2 to be protected
PESDxL2BT
GND
006aaa163
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxL2BT as close to the input terminal or connector as possible.
2. The path length between the PESDxL2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
10 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
PESD3V3L2BT
Package
SOT23
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
[1]
For further information and the availability of packing methods, see Section 15.
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
11 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
10. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PESDXL2BT_SER_1
20051101
Product data sheet
-
9397 750 14034
-
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
12 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14034
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 1 November 2005
13 of 14
PESDxL2BT series
Philips Semiconductors
Low capacitance double bidirectional ESD protection diodes in SOT23
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 1 November 2005
Document number: 9397 750 14034
Published in The Netherlands