PHILIPS PESD3V3V4UW

PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
in SOT665 package
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in
ultra small SOT665 plastic package designed to protect up to four signal lines from the
damage caused by ESD and other transients.
1.2 Features
■ ESD protection of up to four lines
■ Very low diode capacitance
■ Low clamping voltage
■ Ultra low leakage current: IRM = 3 nA
■ ESD protection up to 12 kV
■ IEC 61000-4-2; level 4 (ESD)
1.3 Applications
■ Computers and peripherals
■ Audio and video equipment
■ Cellular handsets and accessories
■ Communication systems
■ Portable electronics
■ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
-
-
3.3
V
-
-
5.0
V
PESD3V3V4UW
-
15
18
pF
PESD5V0V4UW
-
12
15
pF
PESD3V3V4UW
PESD5V0V4UW
Cd
diode capacitance
f = 1 MHz;
see Figure 5;
VR = 0 V
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
1
cathode 1
2
common anode
3
cathode 2
3
4
cathode 3
4
5
cathode 4
5
Symbol
4
1
2
1
2
5
3
sym050
3. Ordering information
Table 3:
Ordering information
Type number
Package
PESD3V3V4UW
Name
Description
Version
-
plastic surface mounted package; 5 leads
SOT665
PESD5V0V4UW
4. Marking
Table 4:
Marking codes
Type number
Marking code
PESD3V3V4UW
W1
PESD5V0V4UW
W2
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPP
Parameter
Conditions
Min
Max
Unit
peak pulse power
8/20 µs
-
16
W
-
16
W
PESD3V3V4UW
-
1.5
A
PESD5V0V4UW
-
1.5
A
[1] [2]
PESD3V3V4UW
PESD5V0V4UW
IPP
peak pulse current
8/20 µs
9397 750 14481
Product data sheet
[1] [2]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
2 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see
Figure 1.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
Table 6:
ESD maximum ratings
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
PESD3V3V4UW
PESD5V0V4UW
PESDxV4UW series
HBM MIL-STD 883
[1]
Device stressed with ten non-repetitive ESD pulses; see Figure 2.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
Table 7:
Min
Max
Unit
-
12
kV
-
12
kV
-
10
kV
[1] [2]
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD); see Figure 2
> 8 kV (contact)
HBM MIL-STD 883; class 3
> 4 kV
001aaa631
001aaa630
120
IPP
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
tr = 0.7 ns to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
9397 750 14481
Product data sheet
t
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
3 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3V4UW
-
-
3.3
V
PESD5V0V4UW
-
-
5.0
V
Per diode
VRWM
reverse stand-off voltage
reverse leakage current
IRM
PESD3V3V4UW
VRWM = 3.3 V
-
40
300
nA
PESD5V0V4UW
VRWM = 5.0 V
-
3
25
nA
5.3
5.6
5.9
V
6.4
6.8
7.2
V
VR = 0 V
-
15
18
pF
VR = 3.3 V
-
9
12
pF
VR = 0 V
-
12
15
pF
VR = 5 V
-
6
9
pF
IPP = 1 A
-
-
9
V
IPP = 2 A
-
-
11
V
IPP = 1 A
-
-
11
V
IPP = 1.7 A
-
-
13
V
PESD3V3V4UW
-
-
200
Ω
PESD5V0V4UW
-
-
100
Ω
breakdown voltage
VBR
see Figure 6;
IR = 1 mA
PESD3V3V4UW
PESD5V0V4UW
diode capacitance
Cd
PESD3V3V4UW
PESD5V0V4UW
f = 1 MHz; see Figure 5;
[1] [2]
clamping voltage
VCL
PESD3V3V4UW
PESD5V0V4UW
differential resistance
rdif
IR = 1 mA
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
4 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
006aaa261
102
001aaa633
1.2
PPP
PPP(25 °C)
PPP
(W)
0.8
10
0.4
1
1
102
10
103
104
0
0
50
100
150
tp (µs)
200
Tj (°C)
Tamb = 25 °C
Tamb = 25 °C
Fig 3. Peak pulse power dissipation as a function of
exponential pulse duration tp; typical values
006aaa262
16
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
006aaa263
10
Cd
(pF)
IRM at T
14
IRM at 25 °C
12
1
(1)
10
(2)
8
6
0
1
2
3
4
5
10−1
−100
−50
f = 1 MHz; Tamb = 25 °C
0
50
100
150
Tj (°C)
VR (V)
PESD3V3V4UW
(1) PESD3V3V4UW
PESD5V0V4UW
(2) PESD5V0V4UW
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
5 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
7. Application information
The PESDxV4UW series is designed for protection of up to four unidirectional data lines
from the damage caused by ESD and surge pulses. The PESDxV4UW series may be
used on lines where the signal polarities are above or below ground. The PESDxV4UW
series provides a surge capability of 16 W per line for an 8/20 µs waveform.
Data- or transmission lines
PESDxV4UW
1
PESDxV4UW
5
2
1
n.c.
3
4
Unidirectional protection of 4 lines
5
2
3
4
Bidirectional protection of 3 lines
006aaa267
Fig 7. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxV4UW as close to the input terminal or connector as possible.
2. The path length between the PESDxV4UW and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
6 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
8. Test information
ESD TESTER
RZ
450 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
Device
Under
Test
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
PESDxV4UW
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD3V3V4UW
GND
PESD5V0V4UW
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa265
Fig 8. ESD clamping test set-up and waveforms
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
7 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
9. Package outline
1.7
1.5
0.6
0.5
5
4
0.3
0.1
1.7
1.5
1.3
1.1
1
2
3
0.18
0.08
0.27
0.17
0.5
1
Dimensions in mm
04-11-08
Fig 9. Package outline SOT665
10. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
4000
PESD3V3V4UW SOT665
4 mm pitch, 8 mm tape and reel
-115
PESD5V0V4UW
[1]
For further information and the availability of packing methods, see Section 15.
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
8 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
11. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PESDXV4UW_SER_1
20050422
Product data sheet
-
9397 750 14481
-
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
9 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14481
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 22 April 2005
10 of 11
PESDxV4UW series
Philips Semiconductors
Very low capacitance quadruple ESD protection diode arrays
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 April 2005
Document number: 9397 750 14481
Published in The Netherlands