BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V ID drain current VGS = 5 V; Tj = 25 °C; see Figure 3; see Figure 1 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 230 W ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped - - 562 mJ VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 9.95 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 15 - 7.6 9 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 SOT78A (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK9509-75A TO-220AB; Plastic single-ended package; heatsink mounted; 1 mounting hole; SC-46 3-lead TO-220AB Version SOT78A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V VDGR drain-gate voltage RGS = 20 kΩ - 75 V VGS gate-source voltage -10 10 V ID drain current VGS = 5 V; Tj = 100 °C; see Figure 1 - 65 A VGS = 5 V; Tj = 25 °C; see Figure 3; see Figure 1 - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 440 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 230 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C VGSM peak gate-source voltage pulsed; tp ≤ 50 µs -15 15 V Source-drain diode IS source current Tmb = 25 °C - 75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 440 A BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 2 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 562 mJ Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy EDS(AL)S 03aa24 120 03na19 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 1. Normalized continuous drain current as a function of mounting base temperature 03nb44 1000 ID (A) RDSon = VDS/ ID tp = 10 us 100 100 us 1 ms δ= P 10 tp D.C. T 10 ms 100 ms t tp T 1 1 10 VDS (V) 100 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 3 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 4 junction to mounting base - - 0.65 K/W thermal resistance from vertical in still air junction to ambient - 60 - K/W 1 Zth(j-mb) (K/W) 03nb45 δ = 0.05 0.2 0.1 0.1 0.05 0.02 δ= P 0.01 tp T Single Shot t tp T 0.001 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 4 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 75 ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 70 gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 6 1 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 6 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 6 Typ Max Unit - - V - - V 1.5 2 V 0.5 - - V - - 2.3 V Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 75 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 75 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA VDS = 0 V; VGS = 10 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -10 V; Tj = 25 °C - 2 100 nA VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 9.95 mΩ VGS = 5 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 15 - - 18.9 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 7.23 8.5 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 15 - 7.6 9 mΩ VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 14 - 6631 8840 pF - 905 1090 pF - 610 840 pF - 47 - ns Dynamic characteristics Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 185 - ns td(off) turn-off delay time - 424 - ns tf fall time - 226 - ns LD internal drain inductance from contact screw on mounting base to centre of die; Tj = 25 °C - 3.5 - nH from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH - 0.85 1.2 V LS internal source inductance VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C BUK9509-75A_3 Product data sheet - 70.3 - ns - 213 - nC © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 5 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 03aa36 10-1 ID (A) 03aa33 2.5 VGS(th) (V) 10-2 2 10-3 max 1.5 typ 10-4 1 min 10-5 0.5 min typ max 10-6 0 1 2 VGS (V) 3 Fig 5. Sub-threshold drain current as a function of gate-source voltage 03nb41 400 ID (A) 350 10 6 5 8 7 0 -60 0 60 120 Tj (°C) 180 Fig 6. Gate-source threshold voltage as a function of junction temperature 03nb40 20 RDSon (mΩ) 18 VGS (V) = 4 300 16 250 14 200 12 150 3 10 8 100 6 50 2.2 4 0 0 2 4 6 8 2 10 VDS (V) Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 4 5 6 7 8 VGS (V) Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values BUK9509-75A_3 Product data sheet 3 © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 6 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 03nb38 140 gfs (S) 120 03nb39 120 ID (A) 100 100 80 80 60 60 Tj = 175 OC 40 40 Tj = 25 OC 20 20 0 0 0 20 40 60 80 ID (A) 100 Fig 9. Forward transconductance as a function of drain current; typical values 03nb37 VGS 5 (V) 4.5 0.0 1.0 2.0 3.0 VGS (V) 4.0 Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 20 RDSon (mΩ) 03nb42 VGS (V) = 3 3.2 3.4 4 VDD= 14 V 4 3.6 3.5 VDD= 60 V 3 3.8 15 2.5 2 10 1.5 6 1 0.5 0 5 0 50 100 QG (nC) 150 Fig 11. Gate-source voltage as a function of gate charge; typical values 0 100 150 200 250 300 350 ID (A) Fig 12. Drain-source on-state resistance as a function of drain current; typical values BUK9509-75A_3 Product data sheet 50 © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 7 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 03nb36 120 IS (A) 100 03nb43 16000 C (pF) 14000 12000 80 10000 60 8000 O Tj = 175 C Ciss 6000 40 4000 20 2000 O Tj = 25 C 0 Coss Crss 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) 0.01 0.1 1 10 VDS(V) 100 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 13. Reverse diode current as a function of reverse diode voltage; typical values 03nb25 2.4 a 1.6 0.8 0 −60 0 60 120 180 Tj (°C) Fig 15. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 8 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78A A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig 16. Package outline SOT78A (TO-220AB; SC-46) BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 9 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9509-75A_3 20080922 Product data sheet - BUK9509_9609_75A-02 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Type number BUK9509-75A separated from data sheet BUK9509_9609_75A-02. Package outline updated, see Figure 16. BUK9509_9609_75A-02 20001106 Product data sheet - BUK9509_9609_75A-01 BUK9509_9609_75A-01 20001010 Product data sheet - - BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 10 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK9509-75A_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 22 September 2008 11 of 12 BUK9509-75A NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: Rev. 03 — 22 September 2008 Document identifier: BUK9509-75A_3