DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. 2 2 APPLICATIONS • Horizontal deflection circuits of colour television receivers MBB008 a. BU506F. 1 PINNING DESCRIPTION 1 base 2 collector 3 emitter 3 3 MBB077 • Line-operated switch-mode applications. PIN(1) 1 1 2 b. BU506DF. 3 Front view MBC668 Fig.1 Simplified outline (SOT186) and symbols. Note 1. All pins electrically isolated from mounting base. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM collector-emitter peak voltage VBE = 0 TYP. − MAX. 1500 UNIT V VCEO collector-emitter voltage open base − 700 V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − 1 V VF diode forward voltage (BU506DF) IF = 3 A 1.5 2.2 V ICsat collector saturation current − 3 A IC collector current (DC) see Figs 2 and 3 − 5 A ICM collector current (peak value) see Figs 2 and 3 − 8 A Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W tf fall time inductive load; see Fig.11 0.7 − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-h thermal resistance from junction to external heatsink note 1 6.35 K/W note 2 3.85 K/W Rth j-a thermal resistance from junction to ambient 55 K/W Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1997 Aug 14 1 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter peak voltage VBE = 0 − 1500 V VCEO collector-emitter voltage open base − 700 V ICsat collector saturation current VCE = 5 V − 3 A IC collector current (DC) see Figs 2 and 3 − 5 A ICM collector current (peak value) see Figs 2 and 3 − 8 A IB base current (DC) − 3 A IBM base current (peak value) − 5 A Ptot total power dissipation − 20 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Th ≤ 25 °C; see Fig.4 ISOLATION CHARACTERISTICS SYMBOL PARAMETER TYP. MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V Cisol isolation capacitance from collector to external heatsink 12 − pF CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEOsust collector-emitter sustaining voltage IC = 100 mA; IB = 0; L = 25 mH; see Figs 5 and 6 700 − − V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − − 1 V VBEsat base-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Fig.9 − − 1.3 V VF diode forward voltage (BU506DF) IF = 3 A − 1.5 2.2 V ICES collector-emitter cut-off current VCE = VCESmax; VBE = 0 − − 0.5 mA VCE = VCESmax; VBE = 0; Tj = 125 °C − − 1 mA mA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 3 A; see Fig.10 2.25 − − VCE = 5 V; IC = 100 mA; see Fig.10 6 13 30 Switching times in horizontal deflection circuit (see Fig.11) ts storage time ICsat = 3 A; LB = 12 µH; IB(end) = 1 A; dIB/dt = −0.33 A/µs − 6.5 − µs tf fall time ICsat = 3 A; LB = 12 µH; IB(end) = 1 A; dIB/dt = −0.33 A/µs − 0.7 − µs 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BU506F; BU506DF MGB933 102 IC (A) ICM max 10 IC max II 1 I 10−1 10−2 10−3 10−4 1 10 102 103 VCE (V) Mounted without heatsink compound and 30 ±5 N force on centre of package. Tmb = 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.2 Forward bias SOAR (no heatsink compound). 1997 Aug 14 3 104 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BU506F; BU506DF MGB934 102 IC (A) ICM max 10 IC max II 1 I 10−1 10−2 10−3 10−4 1 10 102 103 VCE (V) Mounted with heatsink compound and 30 ±5 N force on centre of package. Tmb = 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.3 Forward bias SOAR (with heatsink compound). 1997 Aug 14 4 104 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF MGK674 120 handbook, halfpage Ptot max handbook, halfpage (%) + 50 V 100 to 200 Ω 80 L horizontal oscilloscope 40 vertical 6V 300 Ω 1Ω 30 to 60 Hz 0 0 50 100 Th (oC) MGE252 150 Fig.5 Fig.4 Power derating curve. Test circuit for collector-emitter sustaining voltage. MGB870 10 handbook, halfpage VCEsat (V) handbook,IC halfpage MGE239 (mA) (1) 250 (2) (3) 1 200 100 0 10−1 10−2 VCE (V) min VCEOsust 10−1 1 IB (A) 10 Tj = 25 °C. (1) IC = 1 A. (2) IC = 2 A. (3) IC = 3 A. Fig.6 Oscilloscope display for collector-emitter sustaining voltage. 1997 Aug 14 Fig.7 5 Collector-emitter saturation voltage as a function of base current; typical values. Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF MGB886 2 MGB901 1.2 handbook, halfpage handbook, halfpage VBEsat (V) VCEsat (V) (1) (2) (3) 0.8 1 0.4 0 10−2 0 10−1 1 10 IC (A) 0 1 IC/IB = 2; Tj = 25 °C. Tj = 25 °C. (1) IC = 3 A. (2) IC = 2 A. (3) IC = 1 A. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. MGB877 102 handbook, halfpage 2 IB (A) 3 Base-emitter saturation voltage as a function of base current; typical values. handbook, halfpage MBH382 ICsat iC 90% hFE 10% time 10 tf iB ts IB (end) 1 10−2 10−1 time 1 IC (A) 10 VCE = 5 V; Tj = 25 °C. Fig.10 DC current gain; typical values. 1997 Aug 14 Fig.11 Switching time waveforms. 6 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E E1 e e1 L L1(1) L2 m P Q q w mm 4.4 4.0 2.9 2.5 0.9 0.7 1.5 1.3 0.55 0.38 17.0 16.4 7.9 7.5 10.2 9.6 5.7 5.3 2.54 5.08 14.3 13.5 4.8 4.0 10 0.9 0.5 3.2 3.0 1.4 1.2 4.4 4.0 0.4 Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 1997 Aug 14 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 7 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF NOTES 1997 Aug 14 9 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF NOTES 1997 Aug 14 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02712