DISCRETE SEMICONDUCTORS DATA SHEET BUW84; BUW85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUW84; BUW85 PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. PIN APPLICATIONS DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter • Converters • Inverters ok, halfpage • Switching regulators • Motor control systems • Switching applications. 2 1 3 MBB008 1 2 3 MBK107 Fig.1 Simplified outline (SOT82) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage TYP. MAX. UNIT VBE = 0 BUW84 − 800 V BUW85 − 1000 V BUW84 − 400 V BUW85 − 450 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage IC = 1 A; IB = 200 mA; see Fig.7 − 1 V IC collector current (DC) see Figs 4 and 5 − 2 A ICM collector current (peak value) see Figs 4 and 5 − 3 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.8 − 50 W tf fall time resistive load; see Fig.11 0.4 − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 2.1 K/W Rth j-a thermal resistance from junction to ambient in free air 100 K/W 1997 Aug 14 1 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCESM collector-emitter peak voltage VCEO CONDITIONS MIN. MAX. UNIT VBE = 0 BUW84 − 800 V BUW85 − 1000 V BUW84 − 400 V BUW85 − 450 V collector-emitter voltage open base VEBO emitter-base voltage open collector − 5 V IC collector current (DC) see Figs 4 and 5 − 2 A ICM collector current (peak value) tp = 2 ms; see Figs 4 and 5 − 3 A IB base current (DC) − 0.75 A IBM base current (peak value) − 1 A IBM base current (reversed; peak value) turn-off current − −1 A Ptot total power dissipation − 50 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tmb ≤ 25 °C; see Fig.8 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER collector-emitter sustaining voltage BUW84 CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 2 and 3 collector-emitter saturation voltage 400 TYP. − MAX. UNIT − V 450 − − V IC = 0.3 A; IB = 30 mA; see Fig.7 − − 0.8 V IC = 1 A; IB = 200 mA; see Fig.7 − − 1 V BUW85 VCEsat MIN. VBEsat base-emitter saturation voltage IC = 1 A; IB = 200 mA − − 1.1 V ICES collector-emitter cut-off current VCEM = VCEMSmax; VBE = 0; note 1 − − 200 µA VCEM = VCEMSmax; VBE = 0; Tj = 125 °C; note 1 − − 1.5 mA − mA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − 1 hFE DC current gain VCE = 5 V; IC = 5 A; see Fig.10 15 − − VCE = 5 V; IC = 100 mA; see Fig.10 20 50 100 VCE = 10 V; IC = 200 mA; f = 1 MHz − 20 − fT transition frequency 1997 Aug 14 2 MHz Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL PARAMETER BUW84; BUW85 CONDITIONS MIN. TYP. MAX. UNIT Switching times in horizontal deflection circuit (see Fig.11) ton turn-on time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.2 0.5 µs ts storage time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 2 3.5 µs tf fall time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.4 − µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V; Tmb = 95 °C − − 1.4 µs Note 1. Measured with a half-sinewave voltage (curve tracer). handbook, halfpage handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.2 1997 Aug 14 300 Ω 0 1Ω MGE252 Test circuit for collector-emitter sustaining voltage. Fig.3 3 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUW84; BUW85 MGB938 10 IC (A) δ = 0.01 ICM max tp = 20 µs IC max (1) 1 50 µs II 100 µs 200 µs 500 µs (2) 10−1 1 ms 2 ms 5 ms 10 ms DC I 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUW84. Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms. (1) Ptot max line. (2) Second breakdown limits. Fig.4 Forward bias SOAR. 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUW84; BUW85 MGB937 10 IC (A) δ = 0.01 ICM max tp = 10 µs IC max 20 µs (1) 1 50 µs II 100 µs 200 µs 500 µs (2) 10−1 1 ms 2 ms I 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUW85. Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms. (1) Ptot max line. (2) Second breakdown limits. Fig.5 Forward bias SOAR. 1997 Aug 14 5 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 MGB865 10 handbook, full pagewidth Zth j−mb (K/W) δ=1 0.75 0.50 1 0.33 0.20 0.10 10−1 0.05 0.02 0.01 0 δ= P tp T t tp T 10−2 10−2 10−1 1 10 102 103 104 tp (ms) Fig.6 Transient thermal impedance. (1) (2) (3) (4) MGB908 4 handbook, full pagewidth VCEsat (V) 3 2 1 0 0 (1) IC = 0.3 A. 0.05 (2) IC = 0.5 A. 0.1 (3) IC = 0.7 A. 0.15 (4) IC = 1 A. 0.2 0.25 IB (A) Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.7 Collector-emitter saturation voltage as a function of base current; typical values. 1997 Aug 14 6 0.3 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 MGB904 MGD283 1.0 120 handbook, halfpage handbook, halfpage Ptot max VBEsat (V) (%) (1) (2) (3) 80 0.75 40 0.5 0 0 50 100 Tmb (oC) 150 0 100 200 300 IB (mA) Tj = 25 °C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A. Fig.9 Fig.8 Power derating curve. Base-emitter saturation voltage as a function of emitter current; typical values. handbook, halfpage MGB879 102 handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% hFE t typ IB off 10 IC on 90% IC 10% 1 10−2 10−1 1 IC (A) 10 ton t Fig.11 Switching time waveforms with resistive load. Fig.10 DC current gain; typical values. 1997 Aug 14 tf ts 7 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 +25 V handbook, full pagewidth BD139 200 Ω 680 µF T 250 Ω 100 µF 100 Ω VIM D.U.T. tp Vi 100 Ω 30 Ω MGE253 50 Ω BD140 680 µF Fig.12 Test circuit resistive load. 1997 Aug 14 VCC 250V 8 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 PACKAGE OUTLINE Plastic single-ended package; 3 leads (in-line) SOT82 E A q P D L1 Q L 1 2 3 c w M b e e1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A b c D E e e1 L L1 max. P Q q w mm 2.8 2.3 0.88 0.65 0.58 0.47 11.1 10.5 7.8 7.2 2.29 4.58 16.5 15.3 2.54 3.1 2.5 1.5 0.9 3.9 3.5 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for body and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-11 SOT82 1997 Aug 14 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02722