DISCRETE SEMICONDUCTORS DATA SHEET BUT18; BUT18A Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. dbook, halfpage APPLICATIONS • Converters 2 • Inverters 1 • Switching regulators • Motor control systems. 3 MBB008 MBK106 PINNING PIN 1 2 3 DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage MAX. UNIT VBE = 0 BUT18 850 V BUT18A 1000 V BUT18 400 V BUT18A 450 V see Fig.7 1.5 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage ICsat collector saturation current 4 A IC collector current (DC) see Fig.2 6 A ICM collector current (peak value) see Fig.2 12 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.4 110 W tf fall time resistive load; see Figs 10 and 11 0.8 µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb 1999 Jun 11 PARAMETER thermal resistance from junction to mounting base 2 VALUE UNIT 1.15 K/W Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MIN. MAX. UNIT VBE = 0 BUT18 − 850 V BUT18A − 1000 V BUT18 − 400 V BUT18A − 450 V − 4 A collector-emitter voltage open base ICsat collector saturation current IC collector current (DC) see Fig.2 − 6 A ICM collector current (peak value) see Fig.2 − 12 A IB base current (DC) − 3 A IBM base current (peak value) Ptot total power dissipation Tstg Tj − 6 A − 110 W storage temperature −65 +150 °C junction temperature − 150 °C Tmb ≤ 25 °C; see Fig.4 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER MIN. TYP. MAX. UNIT BUT18 400 − − V BUT18A 450 − − V collector-emitter sustaining voltage CONDITIONS IC = 0.1 A; IBoff = 0; L = 25 mH; see Figs 5 and 6 VCEsat collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.7 − − 1.5 V VBEsat base-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.8 − − 1.3 V ICES collector-emitter cut-off current VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 2 mA mA IEBO emitter-base cut-off current VEB = 9 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 10 mA; see Fig.9 10 18 35 VCE = 5 V; IC = 1 A; see Fig.9 10 20 35 Switching times resistive load (see Figs 10 and 11) ton turn-on time ICon = 4 A; IBon = −IBoff = 800 mA − − 1 µs ts storage time ICon = 4 A; IBon = −IBoff = 800 mA − − 4 µs tf fall time ICon = 4 A; IBon = −IBoff = 800 mA − − 0.8 µs Switching times inductive load (see Figs 10 and 13) ts storage time ICon = 4 A; IBon = 800 mA; VCL = 250 V − 1.6 2.5 µs tf fall time ICon = 4 A; IBon = 800 mA; VCL = 250 V − 150 400 ns Note 1. Measured with a half-sinewave voltage (curve tracer). 1999 Jun 11 3 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUT18; BUT18A MGB921 102 IC (A) ICM max 10 IC max II 1 I 10−1 DC 10−2 BUT18 BUT18A 10−3 10−4 1 10 102 Tmb = 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.2 Forward bias SOAR. 1999 Jun 11 4 103 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A MGB862 10 handbook, full pagewidth Zth j−mb (K/W) δ=1 1 0.75 0.50 0.33 0.20 0.10 10−1 0.05 0.02 0.01 0 10−2 10−3 10−2 10−1 1 102 10 103 tp (ms) Fig.3 Transient thermal impedance. MGD283 120 handbook, halfpage Ptot max handbook, halfpage (%) + 50 V 100 to 200 Ω 80 L horizontal oscilloscope 40 vertical 6V 30 to 60 Hz 300 Ω 1Ω MGE252 0 0 50 100 Tmb (oC) 150 Fig.5 Fig.4 Power derating curve. 1999 Jun 11 5 Test circuit for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A MGB884 2 handbook, halfpage (1) (2) (3) VCEsat (V) MGE239 handbook,IC halfpage (mA) 250 1 200 100 0 0 10−2 VCE (V) min VCEOsust 10−1 1 IB (A) 10 Tj = 25 °C. (1) IC = 1 A. (2) IC = 2 A. (3) IC = 4 A. Fig.6 Oscilloscope display for collector-emitter sustaining voltage. Fig.7 MGB880 1.5 MBC097 102 handbook, halfpage handbook, halfpage VBEsat (V) hFE (1) (2) 1 0.5 10−2 Collector-emitter saturation voltage as a function of base current. 1 IB (A) 1V 10 (3) 10−1 VCE = 5 V 1 10−2 10 10−1 1 10 2 IC (A) 10 Tj = 25 °C. (1) IC = 4 A. (2) IC = 2 A. (3) IC = 1 A. VCE = 5 V; Tj = 25 °C. Fig.8 1999 Jun 11 Base-emitter saturation voltage as a function of base current. Fig.9 DC current gain; typical values. 6 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% VCC handbook, halfpage t IB off RL VIM RB 0 D.U.T. IC on 90% tp IC MGE244 T 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tf t ts tr ≤ 30 ns. Fig.11 Switching time waveforms with resistive load. Fig.10 Test circuit resistive load. handbook, halfpage tr IB on 90% IB 10% VCC handbook, halfpage t LC +IB −IB off VCL LB D.U.T. IC on 90% −VBE MGE246 IC 10% ts toff VCL = up to 1000 V; VCC = 30 V; VBE = −5 V; LB = 1 µH (0 for reverse bias SOAR); LC = 200 µH. Fig.12 Test circuit inductive load and reverse bias SOAR. 1999 Jun 11 t tf MGE238 Fig.13 Switching times waveforms with inductive load. 7 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 1999 Jun 11 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220AB 8 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 11 9 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A NOTES 1999 Jun 11 10 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A NOTES 1999 Jun 11 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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