PHILIPS BLS6G3135-20

BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB
production test circuit.
Mode of operation f
(GHz)
Pulsed RF
VDS
PL
Gp
ηD
tr
tf
(V)
(W)
(dB)
(%)
(ns)
(ns)
20
15.5
45
20
10
3.1 to 3.5 32
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %:
u Output power = 20 W
u Power gain = 15.5 dB
u Efficiency = 45 %
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (3.1 GHz to 3.5 GHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
1.3 Applications
n S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLS6G3135-20 (SOT608A)
1
drain
2
gate
3
source
1
1
[1]
2
3
3
2
sym112
BLS6G3135S-20 (SOT608B)
1
drain
2
gate
3
source
1
[1]
1
3
2
3
2
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLS6G3135-20
Package
Name
Description
Version
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
ceramic earless flanged package; 2 leads
SOT608B
BLS6G3135S-20 -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
2.1
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLS6G3135-20_6G3135S-20_3
Product data sheet
Min
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
2 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-case)
thermal resistance from junction
to case
Tcase = 80 °C; PL = 20 W
Typ
Max
Unit
tp = 100 µs; δ = 20 %
0.76
0.92
K/W
tp = 300 µs; δ = 10 %
0.79
0.95
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
60
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 40 mA
1.4
2
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.5
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
6
8.2
-
A
IGSS
gate leakage current
VGS = 8.3 V; VDS = 0 V
-
-
150
nA
gfs
forward transconductance
VDS = 10 V; ID = 1.4 A
-
2.8
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 1.4 A
-
0.37
0.58
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 50 mA;
Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit.
Symbol
Parameter
Conditions
Min
PL
output power
VCC
-
20
-
W
supply voltage
PL = 20 W
-
-
32
V
Gp
power gain
PL = 20 W
12
15.5
-
dB
ηD
drain efficiency
PL = 20 W
40
45
-
%
tr
rise time
PL = 20 W
-
20
50
ns
tf
fall time
PL = 20 W
-
10
50
ns
BLS6G3135-20_6G3135S-20_3
Product data sheet
Typ
Max
Unit
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
3 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
7.1 Impedance information
Table 8.
Typical impedance
f
ZS
ZL (optimized for ηD)
ZL (optimized for Gp)
Gp(opt)
ηD [1]
GHz
Ω
Ω
Ω
dB
%
3.1
31.24 − j31.07
6.99 + j12.9
13.01 + j14.75
18.08
48.34
3.2
50.56 − j12.48
5.82 + j8.77
11.47 + j11.17
17.97
45.60
3.3
43.66 + j17.27
2.32 + j6.17
10.05 + j10.55
17.75
47.01
3.4
24.13 + j28.47
5.52 + j6.10
9.93 + j8.48
17.91
47.03
3.5
10.56 + j22.21
5.79 + j3.19
9.37 + j5.73
17.68
46.54
[1]
Measured with ZL optimized for Gp.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 µs; δ = 10 %.
BLS6G3135-20_6G3135S-20_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
4 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
7.3 Graphs
001aaf983
17
Gp
(dB)
ηD
(%)
Gp
15
001aaf984
17
50
ηD
Gp
(dB)
(2)
15
40
(3)
(1)
13
30
13
11
20
11
9
10
9
7
3
3.2
7
0
3.6
3.4
0
10
20
f (GHz)
30
PL (W)
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %;
PL = 20 W.
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2.
Power gain and drain efficiency as functions of
frequency; typical values
Fig 3.
001aaf985
60
Power gain as a function of load power; typical
values
001aaf986
30
(2) (3)
ηD
(%)
(1)
PL
(W)
(1)
50
(2)
(3)
20
40
30
10
20
10
0
0
10
20
30
0
PL (W)
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
1.2
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(3) f = 3.5 GHz
Efficiency as a function of load power; typical
values
Fig 5.
Load power as a function of input power;
typical values
BLS6G3135-20_6G3135S-20_3
Product data sheet
0.8
Pi (W)
(1) f = 3.1 GHz
Fig 4.
0.4
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
5 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
001aaf987
17
Gp
(dB)
ηD
(%)
Gp
15
(2)
Gp
(dB)
(3)
40
14
13
30
12
11
20
10
9
10
8
7
3
3.2
(1)
6
0
3.6
3.4
001aaf988
16
50
ηD
0
10
20
f (GHz)
30
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 50 µs; δ = 20 %;
PL = 20 W.
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 6.
Power gain and drain efficiency as functions of
frequency; typical values
Fig 7.
001aaf989
60
ηD
(%)
Power gain as a function of load power; typical
values
001aaf990
30
(2) (3)
(1)
PL
(W)
(1)
50
(2)
(3)
20
40
30
10
20
10
0
0
10
20
30
0
PL (W)
1.2
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
(1) f = 3.1 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(3) f = 3.5 GHz
Efficiency as a function of load power; typical
values
Fig 9.
Load power as a function of input power;
typical values
BLS6G3135-20_6G3135S-20_3
Product data sheet
0.8
Pi (W)
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
Fig 8.
0.4
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
6 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
8. Test information
C5
C3
C4
C10
C13
C11
C9
C12
VDD
C8
C7
VGG
L1
C6
R1
λ / 4-line
λ / 4-line
C1
C2
001aah590
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
Table 9.
List of components
See Figure 10.
Component
Description
Value
Remarks
C1, C2, C5, C6, C7, C8, C9
multilayer ceramic chip capacitor
33 pF
[1]
C3, C4, C10, C11
multilayer ceramic chip capacitor
470 pF
[2]
C12
electrolytic capacitor
47 µF; 63 V
C13
electrolytic capacitor
10 µF; 35 V
L1
copper wire
-
R1
resistor
49.9 Ω
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
BLS6G3135-20_6G3135S-20_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
7 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
3
D1
U1
B
q
c
C
1
H
E1
p
U2
E
w1 M A M B M
2
A
w2 M C M
b
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
10.21 10.29
10.01 10.03
inches
0.182
0.148
0.285 0.006
0.275 0.004
0.402 0.405
0.394 0.395
OUTLINE
VERSION
D
D1
F
H
p
Q
q
U1
U2
w1
w2
10.21 10.29
10.01 10.03
1.14
0.89
15.75
14.73
3.30
2.92
1.70
1.35
15.24
20.45
20.19
9.91
9.65
0.25
0.51
0.402 0.405
0.394 0.395
0.045 0.620
0.035 0.580
0.130
0.115
0.067
0.600
0.053
0.805
0.795
0.390
0.010 0.020
0.380
E
E1
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-02-22
02-02-11
SOT608A
Fig 11. Package outline SOT608A
BLS6G3135-20_6G3135S-20_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
8 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
Ceramic earless flanged package; 2 leads
SOT608B
D
A
F
3
D1
A
U1
c
1
U2
H
E
E1
2
w1
b
M
A
Q
M
0
5 mm
scale
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
inch
0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403
0.020
0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393
OUTLINE
VERSION
D
D1
E
E1
10.21 10.29 10.21 10.29
10.01 10.03 10.01 10.03
F
H
Q
1.14
0.89
15.75
14.73
1.70
1.35
U1
10.24 10.24
9.98 9.98
REFERENCES
IEC
JEDEC
U2
JEITA
w1
0.51
EUROPEAN
PROJECTION
ISSUE DATE
06-11-27
06-12-06
SOT608B
Fig 12. Package outline SOT608B
BLS6G3135-20_6G3135S-20_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
9 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal Oxide Semiconductor
RF
Radio Frequency
S-Band
Short wave Band
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date Data sheet status
BLS6G3135-20_6G3135S-20_3 20090303
Modifications:
•
Product data sheet
Change notice Supersedes
-
Section 7.1 on page 4: Impedance information added
BLS6G3135-20_6G3135S-20_2 20081217
Product data sheet
BLS6G3135-20_6G3135S-20_1 20070307
Objective data sheet -
-
BLS6G3135-20_6G3135S-20_3
Product data sheet
BLS6G3135-20_6G3135S-20_2
BLS6G3135-20_6G3135S-20_1
-
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
10 of 12
NXP Semiconductors
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLS6G3135-20_6G3135S-20_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 3 March 2009
11 of 12
NXP Semiconductors
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation. . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 March 2009
Document identifier: BLS6G3135-20_6G3135S-20_3