BTA312X series D and E 12 A Three-quadrant triacs high commutation Rev. 01 — 16 April 2007 Product data sheet 1. Product profile 1.1 General description Passivated, new generation, high commutation triacs in a SOT186A full pack plastic package 1.2 Features n Sensitive gate n Very high commutation performance maximized at each gate sensitivity n High immunity to dV/dt n High isolation voltage 1.3 Applications n High power motor control - e.g. washing n Refrigeration and air conditioning machines, vacuum cleaners compressors n Electronic thermostats 1.4 Quick reference data n VDRM ≤ 600 V (BTA312X-600D/E) n VDRM ≤ 800 V (BTA312X-800E) n ITSM ≤ 95 A (t = 20 ms) n IGT ≤ 10 mA (BTA312X series E) n IGT ≤ 5 mA (BTA312X-600D) n IT(RMS) ≤ 12 A 2. Pinning information Table 1. Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base; isolated Simplified outline mb Symbol T2 T1 G sym051 1 2 3 SOT186A (TO-220F) BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package BTA312X-600D Name Description TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3-lead TO-220 ‘full pack’ BTA312X-600E Version BTA312X-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions BTA312X-600D; BTA312X-600E [1] Min Max Unit - 600 V VDRM repetitive peak off-state voltage BTA312X-800E - 800 V IT(RMS) RMS on-state current full sine wave; Th ≤ 61 °C; see Figure 4 and 5 - 12 A ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 95 A t = 16.7 ms - 105 A t = 10 ms - 45 A2s ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] for fusing over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 2 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab690 16 Ptot (W) conduction angle (degrees) form factor a α = 180° 30 60 90 120 180 4 2.8 2.2 1.9 1.57 120° 12 90° α 60° 30° 8 4 0 0 3 6 9 12 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aab680 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 3 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab691 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aab681 80 IT(RMS) (A) 70 003aab679 15 IT(RMS) (A) 60 10 50 40 30 5 20 10 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 Th (°C) 150 f = 50 Hz Th = 61 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 4 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-h) Conditions Min Typ Max Unit thermal resistance from junction to full or half cycle; without heatsink heatsink compound; see Figure 6 - - 5.5 K/W full or half cycle; with heatsink compound; see Figure 6 - - 4.5 K/W - 55 - K/W thermal resistance from junction to in free air ambient Rth(j-a) 003aab672 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10−1 P 10−2 tp 10−3 10−5 10−4 10−3 10−2 10−1 1 t 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Parameter Visol(RMS) Cisol Conditions Min Typ Max Unit RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; RH ≤ 65 %; clean and dust free - - 2500 V isolation capacitance - 10 - pF from pin 2 to external heatsink; f = 1 MHz BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 5 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 7. Static characteristics Table 6. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL gate trigger current Conditions BTA312X-600D BTA312X-600E BTA312X-800E Unit Min Typ Max Min Typ Max T2+ G+ - - 5 - - 10 mA T2+ G− - - 5 - - 10 mA T2− G− - - 5 - - 10 mA T2+ G+ - - 10 - - 25 mA T2+ G− - - 15 - - 30 mA VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IGT = 0.1 A; see Figure 10 - - 15 - - 25 mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 T2− G− - - 10 - - 15 mA VT on-state voltage IT = 15 A; see Figure 9 - 1.3 1.6 - 1.3 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - 0.25 0.4 - V - 0.1 0.5 - 0.1 0.5 mA ID off-state current VD = VDRM(max); Tj = 125 °C BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 6 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions BTA312X-600D Unit Min Typ Max Min Typ Max VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 20 - - 50 - - V/µs VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber; gate open circuit 1 - - 3 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dV/dt = 10 µs; gate open circuit 1.5 - - 6 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dV/dt = 1 µs; gate open circuit 4.5 - - 10 - - A/ms - 2 - - 2 - µs gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A; turn-on time dIG/dt = 5 A/µs tgt BTA312X-600E BTA312X-800E 001aab101 1.6 001aac669 3 (1) VGT IGT VGT(25°C) IGT(25°C) 1.2 2 (2) (3) 0.8 0.4 −50 1 0 50 100 150 0 −50 Tj (°C) 0 50 100 150 Tj (°C) (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 7 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab678 40 001aab100 3 IT (A) IL IL(25°C) 30 2 20 1 (1) 10 (2) (3) 0 0 0.5 1 1.5 2 VT (V) 0 −50 2.5 0 50 100 150 Tj (°C) Vo = 1.127 V Rs = 0.027 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature 001aab099 3 IH IH(25°C) 2 1 0 −50 0 50 100 150 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature 9. Package information Epoxy meets UL94 V-0 at 3.175 mm. BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 8 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (TO-220F) BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 9 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA312X_SER_D_E_1 20070416 Product data sheet - - BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 10 of 12 BTA312X series D and E NXP Semiconductors 12 A Three-quadrant triacs high commutation 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BTA312X_SER_D_E_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 16 April 2007 11 of 12 NXP Semiconductors BTA312X series D and E 12 A Three-quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 April 2007 Document identifier: BTA312X_SER_D_E_1