BT258S-800LT SCR logic level, high temperature Rev. 01 — 2 September 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted plastic package 1.2 Features n Very sensitive gate n Direct interfacing to logic level ICs n High operating temperature n Direct interfacing to low-power gate drive circuits 1.3 Applications n General purpose switching and phase control n Protection circuits for Switched-Mode Power Supplies (SMPS) n Ignition circuits n Protection circuits in lighting ballasts 1.4 Quick reference data n n n n VDRM ≤ 800 V VRRM ≤ 800 V ITSM ≤ 75 A (t = 10 ms) Tj(max) = 150 °C n IGT ≤ 50 µA n IT(AV) ≤ 5 A n IT(RMS) ≤ 8 A 2. Pinning information Table 1. Pinning Pin Description 1 cathode (K) 2 anode (A) 3 gate (G) mb mounting base; connected to anode (A) Simplified outline mb Graphic symbol A K G sym037 2 1 3 SOT428 (DPAK) BT258S-800LT NXP Semiconductors SCR logic level, high temperature 3. Ordering information Table 2. Ordering information Type number Package BT258S-800LT Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Min Max Unit repetitive peak off-state voltage - 800 V VRRM repetitive peak reverse voltage - 800 V IT(AV) average on-state current half sine wave; Tmb ≤ 135 °C; see Figure 1 5 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 - 8 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms - 75 A t = 8.3 ms - 82 A - 28 A2s 50 A/µs - 2 A - 5 W - 0.5 W −40 +150 °C - 150 °C I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current PGM peak gate power PG(AV) average gate power Tstg storage temperature tp = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs over any 20 ms period [1] junction temperature Tj [1] for fusing Conditions Operation above Tj = 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less. BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 2 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 003aac292 10 Ptot (W) a = 1.57 8 1.9 2.2 6 2.8 4 4 2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 0 0 1 2 3 4 5 IT(AV) (A) 6 α = conduction angle Fig 1. Total power dissipation as a function of average on-state current; maximum values 003aac293 100 ITSM (A) 80 60 40 IT ITSM 20 t tp Tj(init) = 25 °C max 0 1 102 10 number of cycles 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 3 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 003aac295 103 IT ITSM (A) ITSM t tp Tj(init) = 25 °C max (1) 102 10 10-5 10-4 10-3 tp (s) 10-2 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 003aac294 25 003aac291 10 IT(RMS) (A) IT(RMS) (A) 20 8 15 6 10 4 5 2 0 10-2 10-1 0 -50 1 10 surge duration (s) 0 50 100 150 Tmb (°C) f = 50 Hz Tmb = 135 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 4 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 6 - - 2 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 75 - K/W [1] [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint; see Figure 14. 003aac301 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 5 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 20 - 50 µA IL latching current VD = 12 V; IG = 0.1 A; see Figure 10 - 0.4 10 mA IH holding current VD = 12 V; IG = 0.1 A; see Figure 11 - 0.3 6 mA VT on-state voltage IT = 16 A; see Figure 9 - 1.3 1.6 V VGT gate trigger voltage IT = 0.1 A; see Figure 7 VD = 12 V - 0.4 1.5 V VD = VDRM; Tj = 110 °C 0.1 0.2 - V ID off-state current VD = VDRM(max); Tj = 150 °C - 0.5 2.5 mA IR reverse current VR = VRRM(max); Tj = 150 °C - 0.5 2.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential waveform; RGK = 100 Ω 35 70 - V/µs tgt gate-controlled turn-on time ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs - 2 - µs 003aac296 1.6 003aac297 3 VGT IGT VGT(25°C) IGT(25°C) 1.2 2 0.8 1 0.4 0 −50 0 50 100 0 −50 150 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature 50 100 150 Tj (°C) Fig 8. Normalized gate trigger current as a function of junction temperature BT258S-800LT_1 Product data sheet 0 © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 6 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 003aac290 25 IT (A) 003aac298 3 IL IL(25°C) 20 2 15 10 (1) (2) (3) 1 5 0 0 1 2 3 VT (V) 0 −50 0 50 100 150 Tj (°C) Vo = 1.0 V Rs = 0.04 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 003aac299 3 IH Fig 10. Normalized latching current as a function of junction temperature 003aac300 103 dVD/dt (V/µs) IH(25°C) (1) 2 102 1 10 0 −50 0 50 100 150 Tj (°C) 1 0 50 100 150 Tj (°C) (1) RGK = 100 Ω Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 7 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 13. Package outline SOT428 (DPAK) BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 8 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 8. Mounting 7.0 7.0 1.5 2.15 2.5 4.57 001aab021 Plastic meets requirements of UL94 V-O at 3.175 mm Fig 14. SOT428: minimum pad sizes for surface-mounting BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 9 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT258S-800LT_1 20080902 Product data sheet - - BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 10 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BT258S-800LT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 2 September 2008 11 of 12 BT258S-800LT NXP Semiconductors SCR logic level, high temperature 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 September 2008 Document identifier: BT258S-800LT_1