DISCRETE SEMICONDUCTORS DATA SHEET M3D369 BGY122A; BGY122B UHF amplifier modules Product specification Supersedes data of 1997 Dec 01 1998 May 11 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388B • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency (typ. 55%) 3 VS 4 RF output • Silicon bipolar technology • Standby current less than 100 µA. Flange ground APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. handbook, halfpage DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 1.2 W into a load of 50 Ω with an RF drive power of 2 mW. 1 Top view 2 3 4 MBK197 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE MODE OF OPERATION f (MHz) VS (V) PL (W) Gp (dB) η (%) ZS; ZL (Ω) BGY122A CW 824 to 849 4.8 1.2 ≥27.8 typ. 55 50 BGY122B CW 872 to 905 4.8 1.2 ≥27.8 typ. 55 50 1998 May 11 2 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS DC supply voltage − 10 V VC DC control voltage − 3.5 V PD input drive power − 5 mW PL load power − 1.6 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C VC = 0; PD = 0 MDA147 2.0 PL (W) handbook, halfpage VSWR = 1:1 1.6 VSWR = 3:1 1.2 0.8 0.4 0 0 40 80 120 T mb (oC) VS = 6.5 V. Fig.2 Load power derating curve. 1998 May 11 3 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B CHARACTERISTICS ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC ≤ 3 V; Tmb = 25 °C; unless otherwise specified. SYMBOL f PARAMETER CONDITIONS MIN. TYP. MAX. UNIT frequency BGY122A 824 − 849 MHz BGY122B 872 − 905 MHz − − 100 µA IQ total quiescent current VC = 0; PD < −60 dBm IC control current adjust VC for PL = 1.2 W − − 500 µA PL load power VC = 3 V 1.2 − − W Gp power gain adjust VC for PL = 1.2 W 27.8 − − dB η efficiency adjust VC for PL = 1.2 W 50 55 − % H2 second harmonic adjust VC for PL = 1.2 W − − −36 dBc H3 third harmonic adjust VC for PL = 1.2 W − − −36 dBc VSWRin input VSWR adjust VC for PL = 1.2 W − − 3:1 stability PD = 0 to +6 dBm; VS = 4 to 6.5 V; VC = 0 to 3 V; PL ≤ 1.2 W; VSWR ≤ 6 : 1 through all phases − − −60 dBc isolation VC = 0 − −40 − dBm noise power adjust VC for PL = 1.2 W; bandwidth = 30 kHz; fn = fo + 45 MHz − − −90 dBm ruggedness VS = 6.5 V; adjust VC for PL = 1.4 W; VSWR ≤ 10 : 1 through all phases Pn 1998 May 11 4 no degradation Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B MDA148 MDA149 80 2.0 PL (W) handbook, halfpage handbook, halfpage η (%) 1.6 60 824 MHz 849 MHz 849 MHz 1.2 824 MHz 40 0.8 20 0.4 0 0 0 1 2 3 VC (V) 0 4 0.4 0.8 1.2 1.6 2.0 PL (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.3 Fig.4 Load power as a function of control voltage; BGY122A; typical values. MDA150 Efficiency as a function of load power; BGY122A; typical values. MDA151 2.0 PL (W) 2.0 PL (W) handbook, halfpage handbook, halfpage 1.6 1.6 849 MHz VS = 4.8 V 824 MHz 1.2 1.2 4V 0.8 0.8 0.4 0.4 0 820 830 840 850 f (MHz) 0 −40 860 0 40 80 120 Tmb (oC) ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V. Fig.5 Fig.6 Load power as a function of frequency; BGY122A; typical values. 1998 May 11 5 Load power as a function of mounting base temperature; BGY122A; typical values. Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B MDA152 4 handbook, halfpage VC (V) 3.0 PL (dBm) VSWRin 3 MDA153 40 handbook, halfpage 2.5 20 2.0 0 VC 849 MHz 2 824 MHz VSWRin 1 −20 1.5 0 820 830 840 −40 −40 1.0 860 850 −30 −20 −10 0 10 PD (dBm) f (MHz) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Fig.7 Fig.8 Control voltage and input VSWR as functions of frequency; BGY122A; typical values. Load power as a function of drive power; BGY122A; typical values. MDA154 −30 MDA155 2.0 PL (W) handbook, halfpage H2, H3 (dBc) 1.6 H3 −40 H2 1.2 872 MHz 905 MHz 0.8 −50 0.4 −60 820 830 840 850 f (MHz) 0 860 0 1 2 3 VC (V) 4 ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.9 Fig.10 Load power as a function of control voltage; BGY122B; typical values. Harmonics as a function of frequency; BGY122A; typical values. 1998 May 11 6 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B MDA157 MDA156 2.0 PL (W) 80 handbook, halfpage handbook, halfpage η (%) 1.6 60 VS = 4.8 V 872 MHz 905 MHz 1.2 4V 40 0.8 20 0.4 0 840 0 0 0.4 0.8 1.2 1.6 2.0 PL (W) 860 880 900 f (MHz) 920 ZS = ZL = 50 Ω; PD =2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.11 Efficiency as a function of load power; BGY122B; typical values. Fig.12 Load power as a function of frequency; BGY122B; typical values. MDA158 MDA160 40 2.0 PL (W) handbook, halfpage handbook, halfpage PL (dBm) 1.6 872 MHz 20 905 MHz 1.2 905 MHz 0 872 MHz 0.8 −20 0.4 0 −40 0 40 80 −40 −40 120 Tmb (oC) −30 −20 −10 0 10 PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V. ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Fig.13 Load power as a function of mounting base temperature; BGY122B; typical values. Fig.14 Load power as a function of drive power; BGY122B; typical values. 1998 May 11 7 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B MDA159 4 handbook, halfpage VC (V) MDA161 −30 3.0 VSWRin H2, H3 (dBc) 2.5 3 H3 −40 VC 2.0 2 H2 VSWRin −50 1 0 840 1.5 860 880 −60 840 1.0 920 900 860 880 f (MHz) 900 f (MHz) 920 ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. Fig.15 Control voltage and input VSWR as functions of frequency; BGY122B; typical values. Fig.16 Harmonics as a function of frequency; BGY122B; typical values. handbook, full pagewidth pin numbers 1 2 3 L2 L1 Z1 C1 C4 C3 C5 Z2 C2 RF input C6 VC MSA914 Fig.17 Test circuit. 1998 May 11 4 8 VS RF output Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B handbook, full pagewidth 1 90 2 3 4 50 Ω input 50 Ω output 47 VC VS MBH435 Dimensions in mm. Fig.18 Printed-circuit board test-fixture. List of components (See Figs 17 and 18) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C4 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C5 tantalum capacitor 2.2 µF; 35 V − C3, C6 multilayer ceramic chip capacitor 33 pF 2222 851 13339 L1, L2 Grade 4S2 Ferroxcube chip bead − 4330 030 36300 Z1, Z2 stripline; note 1 50 Ω − Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄ inch. 32 1998 May 11 9 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B SOLDERING The indicated temperatures are those at the solder interfaces. MGM159 300 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. T (°C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. 100 Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. The maximum allowed temperature is 250 °C for a maximum of 5 seconds. 0 0 1 2 3 4 t (min) 5 The maximum ramp-up is 10 °C per second. The maximum cool-down is 5 °C per second. Fig.19 Recommended reflow temperature profile. Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1998 May 11 10 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B 17.7 handbook, full pagewidth 12.5 12 6 4 8.75 6.75 footprint metallization 1 solder area 1.8 2.9 occupied area 0.57 0.7 1.37 5.08 1.7 5.08 2.54 17.9 17.1 12.4 12.1 6.4 solder area 7.55 5.55 2.45 1.67 2.7 1.1 0.5 1.37 5.08 1.5 5.08 Dimensions in mm. Fig.20 Footprint SOT388B. 1998 May 11 11 2.54 MGM150 12.5 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B PACKAGE OUTLINE Rectangular single-ended surface-mount package; metal cap; 4 in-line leads SOT388B U A y U1 E 1 2 3 Q 4 L b Z e c w M e1 e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c e e1 E L Q U U1 w y Z mm 2.2 1.8 0.56 0.46 0.30 0.20 5.08 2.54 12.2 11.8 0.7 0.3 3.4 3.0 17.3 16.9 6.0 5.6 0.25 0.15 2.3 1.9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-11-19 SOT388B 1998 May 11 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 May 11 13 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B NOTES 1998 May 11 14 Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B NOTES 1998 May 11 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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